Sanken Electric Co 2SB1647 Datasheet

54

∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)

Darlington 2SB1647

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

hFE–IC

Temperature Characteristics (Typical)

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

–10mA

–50mA

–3mA

0

–3

–2

–1

–0.2

–1–0.5 –10–5 –200–100–50

Base Current IB(mA)

Collector-Emitter Saturation Voltage VCE(sat)(V)

I

C

=–10A

I

C

=–15A

IC =–5A

0

–15

–10

–5

0–3–2–1

Base-Emittor Voltage VBE(V)

Collector Current IC(A)

(VCE=–4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

–0.2 –0.5 –1 –5 –10 –15

Collector Current I

C(A)

DC Current Gain hFE

(VCE=–4V)

1,000

10,000

50,000

5,000

Typ

(VCE=–4V)

–0.2 –1–0.5 –5 –10 –15

1000

5000

10000

50000

Collector Current IC(A)

DC Current Gain hFE

25˚C

–30˚C

125˚C

Time t(ms)

0.1

1

3

0.5

1 10 100 1000 2000

Transient Thermal Resistance θj-a(˚C/W)

0.02 0.10.05 0.5 1 5 10

0

40

20

60

Cut-off Frequency fT(MHZ)

(VCE=–12V)

Emitter Current IE(A)

Safe Operating Area (Single Pulse)

θj-a

–

t Characteristics

f

T

–

IE Characteristics

(Typical)

0

0

–5

–10

–15

–2 –6–4

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

–1.5mA

–1.0mA

–0.8mA

I

B

=–0.3mA

–0.5mA

–2mA

130

100

50

3.5
0

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

0 25 50 75 100 125 150

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560)

Application : Audio, Series Regulator and General Purpose

Symbol
V

CBO

VCEO
VEBO
IC
IB
PC
Tj
T

stg

2SB1647

–150
–150

–5

–15

–1

130(Tc=25°C)

150

–55 to +150

Unit

V
V
V
A
A

W
°C
°C

■

Absolute maximum ratings

■

Electrical Characteristics

Symbol

I

CBO

IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB

2SB1647

–100

max

–100max
–150min
5000min∗

–2.5

max

–3.0max

45typ

320typ

Unit

µ

A

µ

A

V

V
V

MHz

pF

Conditions

V

CB=–150V

V

EB=–5V

I

C=–30mA

V

CE=–4V, IC=–10A

I

C=–10A, IB=–10mA

I

C=–10A, IB=–10mA

V

CE=–12V, IE=2A

V

CB=–10V, f=1MHz

(Ta=25°C) (Ta=25°C)

External Dimensions MT-100(TO3P)

15.6

±0.4

9.6

19.9

±0.3

4.0 2.0

5.0

±0.2

1.8

ø3.2

±0.1

2

3

1.05

+0.2

-0.1

20.0min

4.0max

BE

5.45

±0.1

5.45

±0.1

C

4.8

±0.2

0.65

+0.2

-0.1

1.4

2.0

±0.1

a
b

■Typical Switching Characteristics (Common Emitter)

V

CC

(V)

–40

RL

(Ω)

4

I

C

(A)

10

V

BB2

(V)

5

I

B2

(mA)

10

t

on

(µs)

0.7typ

t

stg

(µs)

1.6typ

t

f

(µs)

1.1typ

IB1

(mA)

–10

VBB1

(V)

–10

Weight : Approx 6.0g
a. Type No.
b. Lot No.

E

Equivalent circuit

(70Ω)

B

C