Sanken Electric Co 2SB1626 Datasheet
53
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SB1626
–110
–110
–5
–6
–1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1626
–100
max
–100max
–110min
5000min∗
–2.5
max
–3.0max
100typ
110typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=–110V
V
EB=–5V
I
C=–30mA
V
CE=–4V, IC=–5A
I
C=–5A, IB=–5mA
I
C=–5A, IB=–5mA
V
CE=–12V, IE=0.5A
V
CB=–10V, f=1MHz
Darlington 2SB1626
(Ta=25°C)
(Ta=25°C)
External Dimensions FM20(TO220F)
ø3.3
±0.2
10.1
±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9
±0.2
2.542.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c
0.5
2.4
±0.2
0.45
+0.2
-0.1
BEC
a
b
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
6
I
C
(A)
–5
V
BB2
(V)
5
I
B2
(mA)
5
t
on
(µs)
1.1typ
tstg
(µs)
3.2typ
t
f
(µs)
1.1typ
I
B1
(mA)
–5
VBB1
(V)
–10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
E
Equivalent circuit
(70Ω)
B
IC–VCE Characteristics
–5mA
–1mA
–0.5mA
–0.4mA
–6
(Typical)
–0.3mA
VCE(sat)–IB Characteristics
–3
IC–VBE Temperature Characteristics
–6
(Typical)
C
(Typical)
(VCE=–4V)
–4
–2
Collector Current IC(A)
0
0
–2 –6–4
Collector-Emitter Voltage VCE(V)
hFE–IC Characteristics
40,000
10,000
5,000
1,000
DC Current Gain hFE
500
200
–0.2 –0.05 –0.1 –1–0.5 –6–5
f
120
100
80
60
40
Cut-off Frequency fT(MHZ)
20
0
0.02 0.10.05 0.5 1 5 6
Collector Current I
–
T
IE Characteristics
Emitter Current IE(A)
(Typical)
C(A)
(Typical)
Typ
–0.2mA
=–0.1mA
B
I
(VCE=–4V)
Typ
(VCE=–12V)
–2
–1
Collector-Emitter Saturation Voltage VCE(sat)(V)
0
–0.1
hFE–IC
50000
10000
5000
1000
500
DC Current Gain hFE
100
–0.02 –0.1–0.05 –0.5 –6–5–1
–1–0.5 –10–5 –100–50
Base Current IB(mA)
Temperature Characteristics (Typical)
Collector Current IC(A)
Safe Operating Area (Single Pulse)
–20
–10
–0.5
Collector Current IC(A)
–0.1
–0.05
–5
–1
Without Heatsink
Natural Cooling
–10 –50–5–3 –100 –200
Collector-Emitter Voltage V
DC
10ms
100ms
CE(V)
–5A
IC =–3A
(VCE=–4V)
125˚C
25˚C
–30˚C
–4
–2
Collector Current IC(A)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
0
0–3–2–1
Base-Emittor Voltage VBE(V)
–
θj-a
t Characteristics
5.0
1.0
0.5
Transient Thermal Resistance θj-a(˚C/W)
0.3
1 10 100 1000
Time t(ms)
Pc–Ta Derating
30
With Infinite heatsink
20
10
Maximum Power Dissipation PC(W)
Without Heatsink
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
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