Sanken Electric Co 2SB1625 Datasheet
52
Darlington 2SB1625
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SB1625
–110
–110
–5
–6
–1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1625
–100
max
–100max
–110min
5000min∗
–2.5
max
–3.0max
–100typ
–110typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=–110V
V
EB=–5V
I
C=–30mA
V
CE=–4V, IC=–5A
I
C=–5A, IB=–5mA
I
C=–5A, IB=–5mA
V
CE=–12V, IE=0.5A
V
CB=–10V, f=1MHz
(Ta=25°C) (Ta=25°C)
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
6
I
C
(A)
–5
V
BB2
(V)
5
I
B2
(mA)
5
t
on
(µs)
1.1typ
tstg
(µs)
3.2typ
t
f
(µs)
1.1typ
I
B1
(mA)
–5
VBB1
(V)
–10
E
Equivalent circuit
External Dimensions FM100(TO3P)
4.41.5 1.5
BEC
5.45
±0.1
ø3.3
±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45
±0.1
23.0
±0.3
16.2
9.5
±0.2
5.5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494)
(70Ω)
B
IC–VCE Characteristics
–6
–4
–1mA
–5mA
–0.5mA
–0.4mA
(Typical)
–0.3mA
–0.2mA
VCE(sat)–IB Characteristics
–3
–2
(Typical)
–5A
IC–VBE Temperature Characteristics
–6
–5
–4
C
(Typical)
(VCE=–4V)
=–0.1mA
B
I
–2
Collector Current IC(A)
0
0
hFE–IC Characteristics
40,000
10,000
5,000
1,000
DC Current Gain hFE
500
200
–0.2 –0.05 –0.1 –1–0.5 –6–5
T
f
120
100
80
60
40
Cut-off Frequency fT(MHZ)
20
0
0.02 0.10.05 0.5 1 5 6
–2 –6–4
Collector-Emitter Voltage VCE(V)
Collector Current I
–
IE Characteristics
Typ
Emitter Current IE(A)
(Typical)
(VCE=–4V)
Typ
C(A)
(Typical)
(VCE=–12V)
–1
Collector-Emitter Saturation Voltage VCE(sat)(V)
0
–0.1
hFE–IC
50000
10000
5000
1000
500
DC Current Gain hFE
100
–0.02 –0.1–0.05 –0.5 –6–5–1
–1–0.5 –10–5 –100–50
Base Current IB(mA)
Temperature Characteristics (Typical)
Collector Current IC(A)
Safe Operating Area (Single Pulse)
–20
–10
–5
–1
–0.5
Collector Current IC(A)
Without Heatsink
Natural Cooling
–0.1
–0.05
–5 –10 –50 –100 –150
Collector-Emitter Voltage VCE(V)
100ms
DC
IC =–3A
(VCE=–4V)
125˚C
25˚C
–30˚C
10ms
–3
–2
Collector Current IC(A)
–1
0
0–3–2–1
θj-a
5
1
0.5
Transient Thermal Resistance θj-a(˚C/W)
1 10 100 1000 2000
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
Base-Emittor Voltage VBE(V)
–
t Characteristics
Time t(ms)
Pc–Ta Derating
60
With Infinite heatsink
40
20
Maximum Power Dissipation PC(W)
Without Heatsink
3.5
0
05025 75 125100 150
Ambient Temperature Ta(˚C)
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