Sanken Electric Co 2SB1624 Datasheet
51
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2493)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SB1624
–110
–110
–5
–6
–1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1624
–100
max
–100max
–110min
5000min∗
–2.5
max
–3.0max
100typ
110typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=–110V
V
EB=–5V
I
C=–30mA
V
CE=–4V, IC=–5A
I
C=–5A, IB=–5mA
I
C=–5A, IB=–5mA
V
CE=–12V, IE=0.5A
V
CB=–10V, f=1MHz
Darlington 2SB1624
(Ta=25°C)
(Ta=25°C)
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
6
I
C
(A)
–5
V
BB2
(V)
5
I
B2
(mA)
5
t
on
(µs)
1.1typ
t
stg
(µs)
3.2typ
t
f
(µs)
1.1typ
I
B1
(mA)
–5
VBB1
(V)
–10
External Dimensions MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0 2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
E
Equivalent circuit
(70Ω)
B
IC–VCE Characteristics
–6
–1mA
–5mA
–0.5mA
–0.4mA
(Typical)
–0.3mA
VCE(sat)–IB Characteristics
–3
IC–VBE Temperature Characteristics
–6
(Typical)
C
(Typical)
(VCE=–4V)
–4
–2
Collector Current IC(A)
0
0
–2 –6–4
Collector-Emitter Voltage VCE(V)
hFE–IC Characteristics
40,000
10,000
5,000
1,000
DC Current Gain hFE
500
200
–0.2 –0.1 –1–0.5 –6–5
f
120
100
80
60
40
Cut-off Frequency fT(MHZ)
20
0
0.02 0.10.05 0.5 1 5 6
Collector Current I
–
T
IE Characteristics
Emitter Current IE(A)
C(A)
(Typical)
Typ
–0.2mA
=–0.1mA
B
I
(Typical)
(VCE=–4V)
Typ
(VCE=–12V)
–2
–1
Collector-Emitter Saturation Voltage VCE(sat)(V)
0
–0.1
hFE–IC
50,000
10
,
000
5,000
1,000
500
DC Current Gain hFE
100
–0.02 –0.1 –0.5 –6–5–1
–1–0.5 –10–5 –100–50
Base Current IB(mA)
Temperature Characteristics (Typical)
Collector Current IC(A)
Safe Operating Area (Single Pulse)
–20
–10
–5
–1
–0.5
Collector Current IC(A)
Without Heatsink
–0.1
Natural Cooling
–0.05
–5 –10 –50 –100 –200
Collector-Emitter Voltage VCE(V)
10ms
100ms
DC
–5A
IC =–3A
(VCE=–4V)
125˚C
25˚C
–30˚C
–4
–2
Collector Current IC(A)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
0
0–3–2–1
Base-Emittor Voltage V
–
θj-a
t Characteristics
5
1
0.5
Transient Thermal Resistance θj-a(˚C/W)
1 5 10 50 100 500 1000 2000
Time t(ms)
BE(V)
Pc–Ta Derating
60
With Infinite heatsink
40
20
Maximum Power Dissipation PC(W)
Without Heatsink
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
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