50
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SB1588
–160
–150
–5
–10
–1
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1588
–100
max
–100max
–150min
5000min∗
–2.5
max
–3.0max
50typ
230typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=–160V
V
EB=–5V
I
C=–30mA
V
CE=–4V, IC=–7A
I
C=–7A, IB=–7mA
I
C=–7A, IB=–7mA
V
CE=–12V, IE=2A
V
CB=–10V, f=1MHz
Darlington 2SB1588
(Ta=25°C) (Ta=25°C)
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–70
R
L
(Ω)
10
I
C
(A)
–7
V
BB2
(V)
5
I
B2
(mA)
7
t
on
(µs)
0.8typ
tstg
(µs)
3.0typ
t
f
(µs)
1.2typ
I
B1
(mA)
–7
VBB1
(V)
–10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45
±0.1
ø3.3
±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45
±0.1
23.0
±0.3
16.2
9.5
±0.2
5.5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
E
(70Ω)
B
IC–VCE Characteristics
–10
Collector Current IC(A)
–8
–6
–4
–2
0
0
–2.5mA
–2.0mA
–10mA
–2 –4 –6
Collector-Emitter Voltage V
(Typical)
CE(V)
–1.5mA
–1.2mA
–1.0mA
–0.8mA
–0.6mA
I
B
=–0.4mA
VCE(sat)–IB Characteristics
–3
–2
–1
Collector-Emitter Saturation Voltage VCE(sat)(V)
0
–0.2
–1–0.5 –10–5 –200–100–50
Base Current IB(mA)
(Typical)
IC =–5A
–10A
–7A
IC–VBE Temperature Characteristics
–10
–8
–6
–4
Collector Current IC(A)
–2
0
0 –2.5–2–1
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
Base-Emittor Voltage VBE(V)
C
(Typical)
(VCE=–4V)
hFE–IC Characteristics
40,000
10,000
5,000
DC Current Gain hFE
1,000
–0.2 –0.5 –1 –5 –10
f
100
80
60
40
Cut-off Frequency fT(MHZ)
20
0
0.02 0.10.05 0.5 1 5 10
Collector Current I
–
T
IE Characteristics
Emitter Current IE(A)
(Typical)
Typ
C(A)
(Typical)
(VCE=–12V)
Typ
(VCE=–4V)
hFE–IC
Temperature Characteristics (Typical)
50,000
125˚C
10,000
5,000
DC Current Gain hFE
1,000
500
–0.2 –1–0.5 –5 –10
Collector Current IC(A)
25˚C
–30˚C
Safe Operating Area (Single Pulse)
–30
DC
100ms
10ms
CE(V)
–10
–0.5
Collector Current IC(A)
–0.1
–0.05
–5
–1
Without Heatsink
Natural Cooling
Collector-Emitter Voltage V
–10 –50–5–3 –100 –200
(VCE=–4V)
–
θj-a
t Characteristics
3
1
0.5
Transient Thermal Resistance θj-a(˚C/W)
0.1
1 5 10 50 100 5001000 2000
Time t(ms)
Pc–Ta Derating
80
60
40
20
Maximum Power Dissipation PC(W)
Without Heatsink
3.5
0
05025 75 100 125 150
With Infinite heatsink
Ambient Temperature Ta(˚C)