Sanken Electric Co 2SB1560 Datasheet

47

∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)

Darlington 2SB1560

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

hFE–IC

Temperature Characteristics (Typical)

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

0

–2

–4

–6

–10

–8

–2 –4 –6

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

–10mA

–2.5mA

–2.0mA

–1.5mA

–1.0mA

–1.2mA

–0.8mA

–0.6mA

I

B

=–0.4mA

0

–3

–2

–1

–0.2

–1–0.5 –10–5 –200–100–50

Base Current IB(mA)

Collector-Emitter Saturation Voltage VCE(sat)(V)

–7A

–10A

IC =–5A

0

–10

–8

–6

–2

–4

0 –2.5–2–1

Base-Emittor Voltage VBE(V)

Collector Current IC(A)

(VCE=–4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

1,000

10,000

40,000

5,000

–0.2 –0.5 –1 –5 –10

Collector Current I

C(A)

DC Current Gain hFE

(VCE=–4V)

Typ

(VCE=–4V)

–0.2 –1–0.5 –5 –10

500

1000

5000

10000

50000

Collector Current IC(A)

DC Current Gain hFE

125˚C

25˚C

–30˚C

0.1

1

3

0.5

1 5 10 50 100 500 1000 2000

Time t(ms)

Transient Thermal Resistance θj-a(˚C/W)

0.02 0.10.05 0.5 1 5 10

0

40

60

20

100

80

Cut-off Frequency fT(MHZ)

(VCE=–12V)

Emitter Current IE(A)

Typ

10ms

–10 –50–5–3 –100 –200

–0.05

–0.1

–1

–0.5

–10

–30

–5

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

DC

100ms

Without Heatsink

Natural Cooling

100

50

3.5 0

0 25 50 75 100 125 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

Safe Operating Area (Single Pulse)

θj-a

–

t Characteristics

f

T

–

IE Characteristics

(Typical)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)

Application : Audio, Series Regulator and General Purpose

Symbol V

CBO

VCEO VEBO IC IB PC Tj T

stg

2SB1560

–160 –150

–5

–10

–1

100(Tc=25°C)

150

–55 to +150

Unit

V V V A A

W °C °C

■

Absolute maximum ratings

■

Electrical Characteristics

Symbol

I

CBO

IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fr C

OB

2SB1560

–100

max

–100max –150min 5000min∗

–2.5

max

–3.0max

50typ

230typ

Unit

µ

A

µ

A

V

V V

MHz

pF

Conditions V

CB=–160V

V

EB=–5V

I

C=–30mA

V

CE=–4V, IC=–7A

I

C=–7A, IB=–7mA

I

C=–7A, IB=–7mA

V

CE=–12V, IE=2A

V

CB=–10V, f=1MHz

(Ta=25°C)

■Typical Switching Characteristics (Common Emitter)

V

CC

(V)

–70

R

L

(Ω)

10

I

C

(A)

–7

V

BB2

(V)

5

I

B2

(mA)

7

t

on

(µs)

0.8typ

t

stg

(µs)

3.0typ

t

f

(µs)

1.2typ

I

B1

(mA)

–7

VBB1

(V)

–10

External Dimensions MT-100(TO3P)

15.6

±0.4

9.6

19.9

±0.3

4.0 2.0

5.0

±0.2

1.8

ø3.2

±0.1

2

3

1.05

+0.2

-0.1

20.0min

4.0max

BE

5.45

±0.1

5.45

±0.1

C

4.8

±0.2

0.65

+0.2

-0.1

1.4

2.0

±0.1

a b

Weight : Approx 6.0g a. Type No. b. Lot No.

Equivalent circuit