Sanken Electric Co 2SB1559 Datasheet
46
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
E
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SB1559
–160
–150
–5
–8
–1
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1559
–100
max
–100max
–150min
5000min∗
–2.5
max
–3.0max
65typ
160typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=–160V
V
EB=–5V
I
C=–30mA
V
CE=–4V, IC=–6A
I
C=–6A, IB=–6mA
I
C=–6A, IB=–6mA
V
CE=–12V, IE=1A
V
CB=–10V, f=1MHz
Darlington 2SB1559
(Ta=25°C)
(Ta=25°C)
External Dimensions MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0 2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
–60
RL
(Ω)
10
IC
(A)
–6
V
BB2
(V)
5
I
B2
(mA)
6
ton
(µs)
0.7typ
tstg
(µs)
3.6typ
tf
(µs)
0.9typ
IB1
(mA)
–6
VBB1
(V)
–10
Weight : Approx 6.0g
a. Type No.
b. Lot No.
Equivalent circuit
(70Ω)
B
IC–VCE Characteristics
Collector Current IC(A)
–8
–6
–4
–2
0
0
–2.5mA
–2.0mA
–10mA
–2 –4 –6
Collector-Emitter Voltage V
–1.8mA
(Typical)
–1.5mA
–0.8mA
I
CE(V)
–1.3mA
–1.0mA
–0.5mA
B
=–0.3mA
VCE(sat)–IB Characteristics
–3
–2
–1
Collector-Emitter Saturation Voltage VCE(sat)(V)
0
–0.2
–1–0.5 –10–5 –200–100–50
Base Current IB(mA)
IC–VBE Temperature Characteristics
–8
–6
–4
Collector Current IC(A)
–2
0
0–3–2–1
(Typical)
–8A
–6A
IC =–4A
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
Base-Emittor Voltage VBE(V)
C
(Typical)
(VCE=–4V)
hFE–IC Characteristics
40,000
10,000
5,000
DC Current Gain hFE
2,000
–0.2 –1–0.5 –8–5
f
100
80
60
40
Cut-off Frequency fT(MHZ)
20
0
0.02 0.10.05 0.5 1 5 8
Collector Current IC(A)
–
T
IE Characteristics
Emitter Current IE(A)
(Typical)
Typ
(Typical)
(VCE=–12V)
Typ
(VCE=–4V)
hFE–IC
Temperature Characteristics (Typical)
50000
10000
5000
DC Current Gain hFE
1000
–0.2 –1 –5–0.5 –8
125˚C
25˚C
–30˚C
Collector Current I
C(A)
Safe Operating Area (Single Pulse)
–20
–10
–5
–1
–0.5
Collector Current IC(A)
–0.1
–0.05
Without Heatsink
Natural Cooling
–10 –50–5–2 –100 –200
Collector-Emitter Voltage VCE(V)
DC
10ms
100ms
(VCE=–4V)
–
θj-a
t Characteristics
4
1
0.5
Transient Thermal Resistance θj-a(˚C/W)
0.2
110505 100 500 1000 2000
Time t(ms)
Pc–Ta Derating
80
60
40
20
Maximum Power Dissipation PC(W)
Without Heatsink
3.5
0
0 25 50 75 100 125 150
With Infinite heatsink
Ambient Temperature Ta(˚C)
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