Sanken Electric Co 2SB1420 Datasheet
45
)
Silicon PNP Epitaxial Planar Transistor
Application : Chopper Regulator, DC Motor Driver and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SB1420
–120
–120
–6
–16(
Pulse–26)
–1
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1420
–10
max
–10max
–120min
2000min
–1.5max
–2.5max
50typ
350typ
Unit
µ
A
mA
V
V
V
MHz
pF
Conditions
V
CB=–120V
V
EB=–6V
I
C=–10mA
V
CE=–4V, IC=–8A
I
C=–8A, IB=–16mA
I
C=–8A, IB=–16mA
V
CE=–12V, IE=1A
V
CB=–10V, f=1MHz
Darlington 2SB1420
(Ta=25°C)
(Ta=25°C)
External Dimensions MT-100(TO3P)
Weight : Approx 6.0g
a. Type No.
b. Lot No.
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–24
R
L
(Ω)
2
IC
(A)
–12
VBB2
(V)
5
I
B2
(mA)
24
t
on
(µs)
1.0typ
t
stg
(µs)
3.0typ
t
f
(µs)
1.0typ
IB1
(mA)
–24
VBB1
(V)
–10
B
C
E
(2kΩ) (80Ω)
Equivalent circuit
–20mA
(Typical)
–12mA
–6mA
–3mA
=–1.5mA
B
I
IC–VCE Characteristics
–26
–40mA
–20
–10
Collector Current IC(A)
VCE(sat)–IB Characteristics
–3
–2
–1
±0.3
19.9
20.0min
5.45
IC–VBE Temperature Characteristics
–16
–12
–8
Collector Current IC(A)
–4
±0.4
15.6
9.6
4.0 2.0
a
b
4.0max
±0.1
BE
C
1.8
ø3.2
2
3
+0.2
1.05
-0.1
±0.1
5.45
125˚C (Case Temp)
±0.2
4.8
±0.2
5.0
±0.1
0.65
±0.1
2.0
+0.2
-0.1
1.4
(VCE=–4V)
25˚C (Case Temp)
–30˚C (Case Temp)
(Typical)
(Typical)
IC =–16A
–8A
–4A
0
0
hFE–IC Characteristics
20000
10000
5000
DC Current Gain hFE
1000
500
–0.3 –1 –16–10–5
fT–IE Characteristics
100
50
Cut-off Frequency fT(MHZ)
–2–1 –6–5–4–3
Collector-Emitter Voltage VCE(V)
(Typical)
Collector Current I
C(A)
(Typical)
Typ
0
0.05 0.1 5 100.5 1 16
Emitter Current IE(A
(VCE=–4V)
Typ
(VCE=–12V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
0
–1 –100–10
–0.5
hFE–IC
20000
10000
5000
DC Current Gain hFE
1000
500
–0.3 –0.5 –1 –16–10–5
Base Current IB(mA)
Temperature Characteristics (Typical)
125˚C
25˚C
–30˚C
Collector Current I
Safe Operating Area (Single Pulse)
–50
10ms
–10
–0.5
Collector Current IC(A)
–0.1
–0.05
–0.03
–5
–1
DC
Without Heatsink
Natural Cooling
–10 –50–5–3 –100 –200
Collector-Emitter Voltage V
1ms
C(A)
100µs
CE(V)
(VCE=–4V)
0
0 –2.4–2–1
Base-Emittor Voltage VBE(V)
–
θj-a
t Characteristics
3
1
0.5
Transient Thermal Resistance θj-a(˚C/W)
0.2
1 10 100 1000
Time t(ms)
Pc–Ta Derating
80
60
40
20
Maximum Power Dissipation PC(W)
Without Heatsink
3.5
0
0 25 50 75 100 125 150
With Infinite heatsink
Ambient Temperature Ta(˚C)
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