Sanken Electric Co 2SB1352 Datasheet
42
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SB1352
–60
–60
–6
–12(
Pulse–20)
–1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1352
–10
max
–10max
–60min
2000min
–1.5max
–2.0max
130typ
170typ
Unit
µ
A
mA
V
V
V
MHz
pF
Conditions
V
CB=–60V
V
EB=–6V
I
C=–10mA
V
CE=–4V, IC=–10A
I
C=–10A, IB=–20mA
I
C=–10A, IB=–20mA
V
CE=–12V, IE=1A
V
CB=–10V, f=1MHz
Darlington 2SB1352
(Ta=25°C) (Ta=25°C)
External Dimensions FM100(TO3PF)
Silicon PNP Epitaxial Planar Transistor
Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
Weight : Approx 6.5g
a. Type No.
b. Lot No.
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
RL
(Ω)
4
I
C
(A)
–10
V
BB2
(V)
5
I
B2
(mA)
20
t
on
(µs)
0.7typ
tstg
(µs)
1.5typ
tf
(µs)
0.6typ
I
B1
(mA)
–20
VBB1
(V)
–10
(2kΩ)(100Ω)
Equivalent circuit
E
IC–VCE Characteristics
–20
–15
=–10mA
B
I
–6mA
(Typical)
–4mA
–3mA
–2mA
VCE(sat)–IB Characteristics
–3
–2
(Typical)
IC–VBE Temperature Characteristics
–20
–15
±0.3
23.0
16.2
5.45
B
±0.2
±0.2
15.6
±0.2
9.5
a
b
±0.1
4.41.5 1.5
0.8
5.5
±0.2
ø3.3
1.6
3.3
1.75
2.15
+0.2
1.05
-0.1
+0.2
±0.1
0.65
5.45
-0.1
C
±0.2
5.5
±0.2
3.45
3.0
0.8
3.35
BEC
(Typical)
(VCE=–4V)
–10
Collector Current IC(A)
–5
0
0
hFE–IC Characteristics
20000
10000
5000
DC Current Gain hFE
1000
800
–0.3 –1 –20–10–5
fT–IE Characteristics
240
200
160
120
80
Cut-off Frequency fT(MHZ)
40
0
0.05 0.1 5 100.5 1 20
–2–1 –6–5–4–3
Collector-Emitter Voltage VCE(V)
(Typical)
Typ
Collector Current I
C(A)
(Typical)
Typ
Emitter Current IE(A)
–1mA
(VCE=–4V)
(VCE=–12V)
–1
Collector-Emitter Saturation Voltage VCE(sat)(V)
0
–0.1
hFE–IC
Temperature Characteristics (Typical)
20000
10000
5000
DC Current Gain hFE
1000
500
–0.3 –0.5 –1 –5 –20–10
–1A
–1 –100–10
Base Current IB(mA)
125˚C
25˚C
–30˚C
Collector Current IC(A)
Safe Operating Area (Single Pulse)
–30
–10
–0.5
Collector Current IC(A)
–0.1
–0.05
–5
–1
Without Heatsink
Natural Cooling
Collector-Emitter Voltage V
DC
–10 –50–5–2 –100
10ms
1ms
–5A
IC =–10A
CE(V)
(VCE=–4V)
–10
Collector Current IC(A)
–5
0
0 –2.4–2–1
Base-Emittor Voltage VBE(V)
–
θj-a
t Characteristics
5
1
0.5
Transient Thermal Resistance θj-a(˚C/W)
0.3
1 10 100 1000
125˚C (Case Temp)
Time t(ms)
25˚C (Case Temp)
–30˚C (Case Temp)
Pc–Ta Derating
60
40
20
Maximum Power Dissipation PC(W)
Without Heatsink
3.5
0
0 50 100 150
Ambient Temperature Ta(˚C)
With Infinite heatsink
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