Sanken Electric Co 2SB1351 Datasheet

41
Silicon PNP Epitaxial Planar Transistor
Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
Symbol V
CBO
VCEO VEBO IC IB PC Tj T
stg
2SB1351
–60 –60
–6
–12(
Pulse–20)
–1
30(Tc=25°C)
150
–55 to +150
Unit
V V V A A
W °C °C
Absolute maximum ratings
Electrical Characteristics
Symbol
I
CBO
IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
2SB1351
–10
max
–10max –60min
2000min
–1.5max –2.0max
130typ 170typ
Unit
µ
A
mA
V
V V
MHz
pF
Condition
V
CB=–60V
V
EB=–6V
I
C=–10mA
V
CE=–4V, IC=–10A
I
C=–10A, IB=–20mA
I
C=–10A, IB=–20mA
V
CE=–12V, IE=1A
V
CB=–10V, f=1MHz
Darlington 2SB1351
(Ta=25°C) (Ta=25°C)
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
()
4
I
C
(A) –10
V
BB2
(V)
5
I
B2
(mA)
20
t
on
(µs)
0.7typ
t
stg
(µs)
1.5typ
t
f
(µs)
0.6typ
I
B1
(mA)
–20
VBB1
(V)
–10
External Dimensions FM20(TO220F)
Weight : Approx 2.0g a. Type No. b. Lot No.
B
C
E
(2k)(100Ω)
Equivalent circuit
–4mA
–3mA
–2mA
IC–VCE Characteristics
–20
–10mA
–15
–6mA
(Typical)
VCE(sat)–IB Characteristics
–3
–2
(Typical)
±0.2
±0.3
16.9
13.0min
10.1
±0.2
8.4
a b
BEC
IC–VBE Temperature Characteristics
–20
–15
±0.2
4.0
±0.2
ø3.3
±0.2
0.8
±0.2
3.9
±0.15
1.35
±0.15
1.35
+0.2
0.85
-0.1
0.45
2.542.54
±0.2
2.2
±0.2
4.2
2.8
+0.2
-0.1
(VCE=–4V)
2.4
c
0.5
±0.2
(Typical)
–10
Collector Current IC(A)
–5
0
0
hFE–IC Characteristics
20000
10000
5000
DC Current Gain hFE
1000
800
–0.3 –1 –20–10–5
fT–IE Characteristics
240
200
160
120
80
Cut-off Frequency fT(MHZ)
40
0
0.05 0.1 5 100.5 1 20
–2–1 –6–5–4–3
Collector-Emitter Voltage VCE(V)
(Typical)
Typ
Collector Current I
C(A)
(Typical)
Typ
Emitter Current IE(A)
=–1mA
B
I
(VCE=–4V)
(VCE=–12V)
–1
Collector-Emitter Saturation Voltage VCE(sat)(V)
0
–0.1
hFE–IC
Temperature Characteristics (Typical)
20000
10000
5000
DC Current Gain hFE
1000
500
–0.3 –0.5 –1 –5 –20–10
–1A
–1 –100–10
Base Current IB(mA)
125˚C
25˚C
–30˚C
Collector Current IC(A)
Safe Operating Area (Single Pulse)
–30
1ms
–10
–0.5
Collector Current IC(A)
–0.1
–0.05
–5
–1
Without Heatsink
Natural Cooling
Collector-Emitter Voltage V
10ms
DC
–10 –50
–5–2 –100
–5A
CE(V)
IC =–10A
(VCE=–4V)
–10
Collector Current IC(A)
–5
0
0 –2.4–2–1
Base-Emittor Voltage VBE(V)
θj-a
t Characteristics
5
1
0.5
Transient Thermal Resistance θj-a(˚C/W)
0.3 1 10 100 1000
125˚C (Case Temp)
Time t(ms)
25˚C (Case Temp)
–30˚C (Case Temp)
Pc–Ta Derating
30
Natural Cooling Silicone Grease
Heatsink: Aluminum
in mm
20
150x150x2
100x100x2
10
50x50x2
Maximum Power Dissipation PC(W)
Without Heatsink
2 0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
With Infinite heatsink
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