Sanken Electric Co 2SB1258 Datasheet
39
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785)
Application : Driver for Solenoid, Relay and Motor and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SB1258
–100
–100
–6
–6(
Pulse–10)
–1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1258
–10
max
–10max
–100min
1000min
–1.5max
–2max
100typ
100typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=–100V
V
EB=–6V
I
C=–10mA
V
CE=–2V, IC=–3A
I
C=–3A, IB=–6mA
I
C=–3A, IB=–6mA
V
CE=–12V, IE=0.2A
V
CB=–10V, f=1MHz
Darlington 2SB1258
(Ta=25°C)
(Ta=25°C)
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
10
I
C
(A)
–3
V
BB2
(V)
5
I
B2
(mA)
6
t
on
(µs)
0.6typ
tstg
(µs)
1.6typ
t
f
(µs)
0.5typ
I
B1
(mA)
–6
VBB1
(V)
–10
External Dimensions FM20(TO220F)
Weight : Approx 2.0g
a. Type No.
b. Lot No.
(3kΩ)(100Ω)
Equivalent circuit
E
IC–VCE Characteristics
–6
–2.4mA
–5
–4
–3
=–3.4mA
B
I
(Typical)
–2.0mA
–1.8mA
–1.2mA
–0.9mA
VCE(sat)–IB Characteristics
–3
–2
IC–VBE Temperature Characteristics
–6
–5
–4
–3
(Typical)
±0.3
16.9
13.0min
B
±0.2
1.35
1.35
0.85
4.2
±0.2
2.8
4.0
±0.2
ø3.3
±0.2
0.8
±0.2
3.9
±0.15
±0.15
+0.2
-0.1
+0.2
0.45
-0.1
±0.2
10.1
±0.2
8.4
a
b
2.542.54
±0.2
2.2
C
c
0.5
±0.2
2.4
BEC
(Typical)
(VCE=–4V)
–2
Collector Current IC(A)
–1
0
0
–2 –6–4–1 –5–3
Collector-Emitter Voltage VCE(V)
hFE–IC Characteristics
8000
5000
1000
500
DC Current Gain hFE
80
–0.03
–0.1
Collector Current IC(A)
fT–IE Characteristics
120
100
80
Typ
(Typical)
(VCE=–4V)
Typ
–1–0.5 –6
(Typical)
(VCE=–12V)
–1
Collector-Emitter Saturation Voltage VCE(sat)(V)
–0.6
–0.5
hFE–IC
8000
5000
1000
500
DC Current Gain hFE
100
30
–0.03 –0.1 –0.5 –6–1
IC =–2A
–1 –10 –200–100
Base Current IB(mA)
Temperature Characteristics (Typical)
125˚C
25˚C
–30˚C
Collector Current IC(A)
Safe Operating Area (Single Pulse)
–20
–10
–5
DC
10ms
1ms
500µs
–4A
100µs
–6A
(VCE=–4V)
–2
Collector Current IC(A)
125˚C (Case Temp)
–1
0
0 –2.2–2–1
Base-Emittor Voltage VBE(V)
–
θj-a
t Characteristics
5
1
Transient Thermal Resistance θj-a(˚C/W)
0.5
1 10 100 1000
Time t(ms)
25˚C (Case Temp)
–30˚C (Case Temp)
Pc–Ta Derating
30
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
With Infinite heatsink
60
40
Cut-off Frequency fT(MHZ)
20
0
0.05 0.1 0.5 1 5 6
Emitter Current IE(A)
–0.5
Collector Current IC(A)
–0.1
–0.05
–1
Without Heatsink
Natural Cooling
–10 –50–5–3 –100 –200
Collector-Emitter Voltage V
CE(V)
150x150x2
100x100x2
10
50x50x2
Maximum Power Dissipation PC(W)
Without Heatsink
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
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