Sanken Electric Co 2SA1908 Datasheet

36

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100)

Application : Audio and General Purpose

Symbol V

CBO

VCEO VEBO IC IB PC Tj T

stg

2SA1908

–120 –120

–6 –8 –3

75(Tc=25°C)

150

–55 to +150

Unit

V V V A A

W °C °C

■

Absolute maximum ratings

■

Electrical Characteristics

■Typical Switching Characteristics (Common Emitter)

Symbol

I

CBO

IEBO V(BR)CEO hFE VCE(sat) fT COB

2SA1908

–10

max

–10max

–120min

50min∗

–0.5max

20typ

300typ

Unit

µ

A

µ

A

V

V

MHz

pF

Conditions

V

CB=–120V

V

EB=–6V

I

C=–50mA

V

CE=–4V, IC=–3A

I

C=–3A, IB=–0.3A

V

CE=–12V, IE=0.5A

V

CB=–10V, f=1MHz

V

CC

(V)

–40

RL

(Ω)

10

IC

(A)

–4

V

BB2

(V)

5

I

B2

(A)

0.4

t

on

(µs)

0.14typ

t

stg

(µs)

1.40typ

t

f

(µs)

0.21typ

I

B1

(A)

–0.4

2SA1908

(Ta=25°C)

(Ta=25°C)

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

Safe Operating Area (Single Pulse)

hFE–IC

Temperature Characteristics (Typical)

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

0

0

–2

–4

–6

–8

–1 –2 –3 –4

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

–350mA

–200mA

–150mA

–25mA

–100mA

–75mA

–50mA

I

B

=–10mA

0

–3

–2

–1

0 –0.2 –0.4 –0.6 –0.8 –1.0

Base Current I

B(A)

Collector-Emitter Saturation Voltage VCE(sat)(V)

IC =–8A

–4A

–2A

0

–8

–6

–2

–4

0 –1.5–1.0–0.5

Base-Emittor Voltage VBE(V)

Collector Current IC(A)

(VCE=–4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

–0.02 –0.1 –0.5 –1 –8–5

30

50

100

200

Collector Current IC(A)

DC Current Gain hFE

(VCE=–4V)

Typ

DC

Without Heatsink

Natural Cooling

100ms

10ms

–10–5 –50 –100 –150

–0.1

–1

–0.5

–10

–20

–5

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

0.02 0.10.05 0.5 1 5 8

0

20

10

30

Cut-off Frequency fT(MHZ)

(VCE=–12V)

Emitter Current I

E(A)

Typ

0.2

0.5

4

1

1 10 100 1000 2000

Time t(ms)

Transient Thermal Resistance θj-a(˚C/W)

θj-a

–

t Characteristics

f

T

–

IE Characteristics

(Typical)

80

60

40

20

3.5 0

05025 75 125100 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

(VCE=–4V)

–0.02 –0.1 –0.5 –1 –5 –8

30

50

100

300

Collector Current I

C(A)

DC Current Gain hFE

125˚C

25˚C

–30˚C

VBB1

(V)

–10

External Dimensions FM100(TO3PF)

4.41.5 1.5

BEC

5.45

±0.1

ø3.3

±0.2

1.6

3.3

1.75

0.8

±0.2

2.15

1.05

+0.2

-0.1

5.45

±0.1

23.0

±0.3

16.2

9.5

±0.2

5.5

15.6

±0.2

5.5

±0.2

3.45

3.35

0.65

+0.2

-0.1

±0.2

3.0

0.8

a b

Weight : Approx 6.5g a. Type No. b. Lot No.

∗hFE Rank O(50to100), P(70to140), Y(90to180)

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