Sanken Electric Co 2SA1907 Datasheet
35
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099)
Application : Audio and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SA1907
–80
–80
–6
–6
–3
60(Tc=25°C)
150
–55
to
+150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1907
–10
max
–10max
–80min
50min∗
–0.5max
20typ
150typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
V
CB=–80V
V
EB=–6V
I
C=–50mA
V
CE=–4V, IC=–2A
I
C=–12A, IB=–0.2A
V
CE=–12V, IE=0.5A
V
CB=–10V, f=1MHz
2SA1907
(Ta=25°C)
(Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
0
0
–2
–1
–4
–3
–5
–6
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–200mA
–150mA
–100mA
–80mA
–50mA
–30mA
–20mA
I
B
=–10mA
0
–3
–2
–1
0 –0.5 –1.0 –1.5
Base Current I
B(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC =–6A
–4A
–2A
–0.02 –0.1 –0.5 –1 –5 –6
30
50
100
300
Collector Current I
C(A)
DC Current Gain hFE
(VCE=–4V)
Typ
–5 –10 –50 –100
–0.1
–1
–0.5
–10
–20
–5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
0.02 0.10.05 0.5 1 5 6
0
20
10
30
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current I
E(A)
Typ
fT–IE Characteristics
(Typical)
0
–6
–4
–2
0 –1.5–1
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –6
30
50
100
300
DC Current Gain hFE
125˚C
25˚C
–30˚C
Collector Current IC(A)
θj-a
–
t Characteristics
0.3
1
5
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
Pc–Ta Derating
60
40
20
3.5
0
05025 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
VCC
(V)
–30
R
L
(Ω)
10
I
C
(A)
–3
V
BB2
(V)
5
I
B2
(A)
0.3
t
on
(µs)
0.18typ
t
stg
(µs)
1.10typ
t
f
(µs)
0.21typ
I
B1
(A)
–0.3
VBB1
(V)
–10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45
±0.1
ø3.3
±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45
±0.1
23.0
±0.3
16.2
9.5
±0.2
5.5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
∗hFE Rank O(50to100), P(70to140), Y(90to180)
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