∗hFE Rank O(50to100), Y(70to140)
16
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)
Application : Audio and General
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SA1295
–230
–230
–5
–17
–5
200(Tc=25°C)
150
–55
to
+150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1295
–100
max
–100max
–230min
50min∗
–2.0max
35typ
500typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
V
CB=–230V
V
EB=–5V
I
C=–25mA
V
CE=–4V, IC=–5A
I
C=–5A, IB=–0.5A
V
CE=–12V, IE=2A
V
CB=–10V, f=1MHz
LAPT 2SA1295
(Ta=25°C)
(Ta=25°C)
VCC
(V)
–60
R
L
(Ω)
12
I
C
(A)
–5
V
BB2
(V)
5
I
B2
(mA)
500
ton
(µs)
0.35typ
tstg
(µs)
1.50typ
t
f
(µs)
0.30typ
I
B1
(mA)
–500
VBB1
(V)
–10
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–17
–1 –2 –3 –4
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
–3.0A
–50mA
–100mA
I
B
=–20mA
–2.0A
–1.5A
–1.0A
–500mA
–300mA
–200mA
0
– 3
–2
–1
0 –0.5 –1.0 –2.0–1.5
Base Current I
B(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC =–10A
–5A
–0.02 –0.1 –1 –10–0.5 –5 –17
10
50
100
200
Collector Current I
C(A)
DC Current Gain hFE
(VCE=–4V)
Typ
Without Heatsink
Natural Cooling
–3 –10 –100 –300
–0.1
–0.05
–1
–0.5
–10
–40
–5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
10ms
DC
0.02 0.1 1 10
0
20
40
60
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current I
E(A)
Typ
1 10 100 1000 2000
Time t(ms)
0.1
1
2
0.5
Transient Thermal Resistance θj-a(˚C/W)
θj-a
–
t Characteristics
f
T
–
IE Characteristics
(Typical)
200
160
120
80
40
5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0
–10
–5
–15
–17
0 –3.2–2.4–1.6–0.8
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –10 –17
10
50
100
200
Collector Current I
C(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
External Dimensions MT-200
2
3
1.05
+0.2
-0.1
BE
5.45
±0.1
5.45
±0.1
2-ø3.2
±0.1
36.4
±0.3
9
24.4
±0.2
7
21.4
±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0
±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Type No.
b. Lot No.