SanDisk® Corporation general policy does not recommend the use of its products in life support applications where in a
failure or malfunction of the product may directly threaten life or injury. Per SanDisk Terms and Conditions of Sale, the
user of SanDisk products in life support applications assumes all risk of such use and indemnifies SanDisk against all
damages.
The information in this manual is subject to change without notice.
SanDisk Corporation shall not be liable for technical or editorial errors or omissions contained herein; nor for incidental or
consequential damages resulting from the furnishing, performance, or use of this material.
All parts of the SanDisk SDP3B FlashDisk documentation are protected by copyright law and all rights are reserved. This
documentation may not, in whole or in part, be copied, photocopied, reproduced, translated, or reduced to any electronic
medium or machine readable form without prior consent, in writing, from SanDisk Corporation.
SanDisk and the SanDisk logo are registered trademarks of SanDisk Corporation.
Product names mentioned herein are for identification purposes only and may be trademarks and/or registered trademarks
5,095,344; 5,168,465; 5,172,338; 5,198,380; 5,200,959; 5,268,318; 5,268,870; 5,272,669; 5,418,752; 5,602,987. Other
U.S. and foreign patents awarded and pending.
The SanDisk SDP3B FlashDisk products provide
high capacity solid state flash memory that
electrically complies with the Personal Computer
Memory Card International Association ATA (PC
Card ATA) standard. (In Japan, the applicable
standards group is JEIDA.) The SDP3B FlashDisk
also supports a True IDE Mode that is electrically
compatible with an IDE disk drive. SDP3B
FlashDisks provide up to 220 million bytes
(Megabytes, MBytes or MB) of formatted storage
capacity in a Type II or Type III form factor. The
host system can support as many cards as there are
Type II or III PCMCIA slots.
The SDP3B FlashDisk uses SanDisk Flash
memory chips which were designed by SanDisk
specifically for use in mass storage applications.
In addition to the mass storage specific Flash
memory chips, the SDP3B FlashDisks include an
on-card intelligent controller that provides a
high level interface to the host computer. This
interface allows a host computer to issue
commands to the memory card to read or write
blocks of memory. A block of memory consists of
512 bytes of data and is protected by a powerful
Error Correcting Code (ECC).
The SDP3B FlashDisk on-card intelligent
controller manages interface protocols, data
storage and retrieval as well as ECC, defect
handling and diagnostics, power management and
clock control. Once the SDP3B FlashDisk has been
configured by the host, it appears to the host as a
standard ATA (IDE) disk drive. Additional ATA
commands have been provided to enhance system
performance.
Figure 1-1 SDP3B FlashDisk Block Diagram
1.1Scope
This document describes the key features and
specifications of the SDP3B FlashDisk, as well as
the information required to interface this product
to a host system.
The SDP3B FlashDisk is available in 2 to 220
megabyte capacities. All SDP3B FlashDisks are
shipped formatted with a DOS 5.0 file structure.
SDP3B FlashDisk Product Manual
1.3System Features
•Up to 220 megabytes of data storage
available
•PC Card ATA protocol compatible
•True IDE Mode compatible
•Very low CMOS power
•Very high performance
•Programmable power versus performance
•Very rugged
•Low weight
•Noiseless
•Low Profile
•+5 Volts or +3.3 Volts operation
•Automatic error correction and retry
capabilities
•Supports power down commands and sleep
modes
•Non-volatile storage (no battery required)
•MTBF of 1,000,000 hours for Type II
FlashDisk, 500,000 hours for Type III
FlashDisk
•Minimum 10,000 insertions
1.5Related Documentation
1)American National Standard X3.221
AT Attachment for Interface for Disk
Drives Document
This document can be obtained by calling
Global Engineering at 1-800-854-7179.
1.6The SDP3B FlashDisk Compared
to Previous FlashDisks
The SDP3B FlashDisk is compatible with
SanDisk’s previous FlashDisk products, the SDP,
SDP5, and the SDP5A product. The SDP3B
FlashDisk is not compatible with the SDP5L
which was designed specifically for the HP95LX.
Therefore, the SDP3B FlashDisk is not system
compatible with the HP95LX. For this document,
any of these products are defined as the SDP
Series products. Several improvements have been
added to the SDP3B FlashDisk that do not
appear in previous products. Differences between
the SDP3B FlashDisk and the previous
FlashDisks that could be noticed by previous
FlashDisk users are explained in the following
sections.
•Standard (SDP3B) and industrial
(SDP3BI) versions available
1.4 PCMCIA Standard
SDP3B FlashDisks are fully compatible with the
PCMCIA specifications listed below. These
specifications may be obtained from:
PCMCIA
2635 N. First St. Suite 209
San Jose, CA 95134
USA
Phone: 408-433-2273
Fax: 408-433-9558
The system power requirements for the SDP3B
FlashDisk are different from those of the SDP5A
SDP5A FlashDisk and the SDP3B FlashDisk
power requirements.
FlashDisk. The two tables below show the
SDP3B
(Standard Version)
DC Input Voltage (VCC)
100 mV max. ripple (p-p)
Capacities of
85 MB & Lower
+5 V Currents
(maximum Average value)
See Notes 1 to 3.
Read/Write Peak
Capacities
above 85 MB
Read/Write Peak
Note 1. All values quoted are typical at ambient temperature and nominal supply voltage unless otherwise stated.
Note 2. Sleep mode currently is specified under the condition that all card inputs are static CMOS levels and in a
“Not Busy “ operating state.
Note 3. The currents specified show the bounds of programmability of the product.
Sleep:
Reading:
Writing:
Sleep:
Reading:
Writing:
3.3V ±5%5V ± 10%3.3V ±5%5 V ±5% Only
200 µA
(Slow - Fast)
32 mA - 45 mA
32 mA - 60 mA
150 mA/50µs
200 µA
(Slow - Fast)
32 mA - 50 mA
32 mA - 70 mA
150 mA/50µs
500 µA
(Slow - Fast)
46 mA - 75 mA
46 mA - 90 mA
150 mA/50µs
500 µA
(Slow - Fast)
46 mA - 90 mA
46 mA - 110 mA
150 mA/50µs
200 µA
(Slow - Fast)
32 mA - 45 mA
32 mA - 60 mA
150 mA/50µs
200 µA
(Slow - Fast)
32 mA - 50 mA
32 mA - 70 mA
150 mA/50µs
SDP3BI
(Industrial Version)
500 µA
(Slow - Fast)
46 mA - 75 mA
46 mA - 90 mA
150 mA/50µs
500 µA
(Slow - Fast)
46 mA - 90 mA
46 mA - 110 mA
150 mA/50µs
Model SDP5AStandard FlashDiskIndustrial FlashDisk
DC Input Voltage (VPP) (Note 4)Not UsedNot Used
DC Input Voltage (VCC)
100 mv max. ripple (p-p)
+5 V Currents
(maximum average value)
See Notes 1 to 5
Note 1. Sleep mode current is specified under the condition that all FlashDisk inputs are at static CMOS levels and
in a “Not Busy” operating state.
Note 2. The currents specified show the complete range of programmability in the PC Card ATA FlashDisk. A
tradeoff between performance and maximum current used can be done using the Set Features command.
The FlashDisk defaults to the fastest speed and highest current. See the Set Features command for more
details.
Note 3. For information on peak currents during power on, hot insertion and writing, please contact SanDisk
Technical Support at (408) 542-0400.
Note 4. The Vpp pins are not connected in this product.
Note 5. At maximum performance, typical average Read current is 70 mA and typical average write current is
100 mA.
Sleep:
Reading:
Writing:
Type III
Reading:
Writing:
5 V ±10%5 V ±5%
≤ 1 mA
(Slow - Fast)
36 mA - 100 mA
36 mA - 125 mA
The Card Information Structure (CIS) of the
SDP5A FlashDisk is different from the SDP3B
FlashDisk CIS. The SDP3B FlashDisk CIS
indicates support for twin card and 3.3 volt
operation which are not supported in the SDP5A
1.6.3Capacity Specifications
The capacity specifications for the SDP5A
FlashDisk are different from the capacity
specifications of the SDP3B FlashDisk. The
tables below show the capacity specifications of
the SDP5A FlashDisk and the SDP3B FlashDisk.
FlashDisk. Both the SDP5A FlashDisk and the
SDP3B FlashDisk support 5 volt operation.
SDP3B-110Type II or III110,100,480 bytes215,040832840
SDP3B-175Type II or III175,374,336 bytes342,5281232892
SDP3B-220Type II or III220,200,960 bytes430,0801632840
The Voltage Sense Signal -VS1, pin 43, of the
SDP3B FlashDisk is grounded because the Card
Information Structure (CIS) can be read at 3.3
volts. In the SDP5A FlashDisk, this pin is not
grounded because the SDP5A FlashDisk CIS can
only be read at 5 volts.
Note:In some early platforms, the -VS1 pin (pin 43) is
also the Refresh pin for DRAM cards. Plugging
the SDP3B into a platform supporting the
Refresh pin will hang the bus.
1.6.5True IDE Mode
The SDP3B FlashDisk differs from the SDP5A
FlashDisk in that it can be configured in True IDE
Mode. See section 4.6 True IDE Mode I/O Transfer
Function.
1.6.6Identify Drive Information
Word 51 of the Identify Drive Command
information has a default value of 0000H for the
SDP5A FlashDisk. The data field type
information for this word is “PIO data transfer
cycle timing mode 0.”
For the SDP3B FlashDisk, word 51 of the Identify
Drive Command information has a default value
of 0001H. The data field type information for this
word is “PIO data transfer cycle timing mode 1.”
4.Sophisticated system for error recovery
including a powerful error correction code
(ECC).
5.Power management for low power
operation.
1.7.1Flash Technology Independence
The 512 byte sector size of SDP3B FlashDisk is
the same as that in an IDE magnetic disk drive. To
write or read a sector (or multiple sectors), the
host computer software simply issues a Read or
Write command to the SDP3B FlashDisk. This
command contains the address and the number of
sectors to write/read. The host software then
waits for the command to complete. The host
software does not get involved in the details of
how the flash memory is erased, programmed or
read. This is extremely important as flash devices
are expected to get more and more complex in the
future. Since the SDP3B FlashDisk uses an
intelligent on-board controller, the host system
software will not require changing as new flash
memory evolves. In other words, systems that
support the SDP3B FlashDisk today will be able
to access future SanDisk cards built with new
flash technology without having to update or
change host software.
1.7.2Defect and Error Management
1.7Functional Description
SDP3B FlashDisks contain a sophisticated defect
and error management system. This system is
analogous to the systems found in magnetic disk
SDP3B FlashDisks contain a high level,
intelligent subsystem as shown in the block
diagram, Figure 1-1. This intelligent
(microprocessor) subsystem provides many
capabilities not found in other types of memory
cards. These capabilities include:
1.Standard ATA register and command set
(same as found on most magnetic disk
drives).
2. Host independence from details of erasing
and programming flash memory.
drives and in many cases offers enhancements. For
instance, disk drives do not typically perform a
read after write to confirm the data is written
correctly because of the performance penalty that
would be incurred. SDP3B FlashDisks do a read
after write under margin conditions to verify that
the data is written correctly (except in the case of
a Write without Erase Command). In the rare case
that a bit is found to be defective, SDP3B
FlashDisks replace this bad bit with a spare bit
within the sector header. If necessary, SDP3B
FlashDisks will even replace the entire sector
with a spare sector. This is completely
3.Sophisticated system for managing
defects (analogous to systems found in
transparent to the host and does not consume any
user data space.
The SDP3B FlashDisk soft error rate specification
is much better than the magnetic disk drive
specification. In the extremely rare case a read
error does occur, SDP3B FlashDisks have
innovative algorithms to recover the data. This is
similar to using retries on a disk drive but is much
more sophisticated. The last line of defense is to
employ a powerful ECC to correct the data. If ECC
is used to recover data, defective bits are replaced
with spare bits to ensure they do not cause any
future problems.
These defect and error management systems
coupled with the solid state construction give
SDP3B FlashDisks unparalleled reliability.
1.7.3 Endurance
SDP3B FlashDisks have an endurance
specification for each sector of 300,000 writes
(reading a logical sector is unlimited). This is far
beyond what is needed in nearly all applications
of SDP3B FlashDisks. Even very heavy use of
SDP3B FlashDisks in PDAs, ruggedized
handheld computers, palmtop and notebook
computers will use only a fraction of the total
endurance over the typical computer’s five year
lifetime. For instance, it would take over 34 years
to wear out an area on the SDP3B FlashDisk on
which a file of any size (from 512 bytes to
capacity) was rewritten 3 times per hour, 8 hours a
day, 365 days per year.
With typical applications (PIM software, word
processing, spreadsheets, etc.), the endurance
limit is not of any practical concern to the vast
majority of users.
Erase Sector command, a write to that sector will
be much faster. This is because a normal write
operation includes a separate sector erase prior to
write.
An example of where these commands may be
useful is in a digital camera. The camera user may
have plenty of time to erase pictures but may wish
to take several pictures in rapid succession. To
accomplish this, the host system (i.e., camera)
would use the Erase Sectors command to pre-erase
the sectors that will store the pictures. When the
pictures are taken, the camera can store them in
the previously erased sectors much faster than in
non-erased sectors.
1.7.5.1Interaction with Systems not Aware of
the Erase Sector and Write without
Erase Commands
Many systems that can read and write SDP3B
FlashDisks may not be aware of the Erase Sector
and Write without Erase Commands. These
systems would not issue these commands but such a
system might attempt a normal write or a normal
read to a pre-erased sector.
A normal write to a pre-erased sector will function
correctly, but will be at the normal write speed
that is slower than a Write without Erase
command.
If a normal read is attempted to a “pre-erased”
sector, SDP3B FlashDisks will detect it is preerased and will return zero data and will not
report an error even though the data ECC is not
valid.
1.7.4 Wear Leveling
SDP3B FlashDisks do not require or perform a
Wear Level operation. The command is supported
as a NOP operation to maintain backward
compatibility with existing software utilities.
1.7.5Using the Erase Sector and Write without
Erase Commands
The Erase Sector and Write without Erase
commands provide the capability to substantially
increase the write performance of the SDP3B
FlashDisk. Once a sector has been erased using the
If an “un-aware” host system over-writes a preerased sector with a normal write and then the
SDP3B FlashDisk is moved to the system that
created the erased sectors, a situation exists
where a Write without Erase might be attempted
to a “normal” sector. If this occurs, the SDP3B
FlashDisk will perform a normal write which
means it will first erase the sector and then do a
full write with all margin modes enabled. This
write will of course be slower than if the sector
were in fact pre-erased.
The advantage of the Write without Erase and
Erase Sector commands is that they shift the bulk
of the erase and write time to the Erase Sector
command. The Erase Sector command performs
most of the normal tasks needed. To increase the
speed of the Write without Erase command, the
final margin verify done in a normal write
command is skipped for the first 16K writes.
When the cycle count (hot count) of a sector
exceeds 16K, the system controller automatically
reverts to a full write, including the final margin
verify. Since the erase is not required in this case,
a write to a pre-erased sector with a hot count of
over 16K is still faster than to a sector that has
not been pre-erased. The Translate Sector
command can be used to determine the “hot count”
of a sector.
1.7.6Automatic Sleep Mode
A unique feature of the SanDisk SDP3B
FlashDisk (and other SanDisk products) is
automatic entrance and exit from sleep mode.
Upon completion of a command, the SDP3B
FlashDisk will enter the sleep mode to conserve
power if no further commands are received within
5 msec. The host does not have to take any action
for this to occur. In most systems, the SDP3B
FlashDisk is in sleep mode except when the host
is accessing it, thus conserving power. Note that
the delay from command completion to entering
sleep mode can be adjusted.
1.7.7Dynamic Adjustment of Performance
versus Power Consumption
A very unique and valuable feature of the SDP3B
FlashDisk is the ability of the host to control the
power the card consumes. This allows SDP3B
FlashDisks to work across a broad cross section of
platforms without compromising performance. For
instance, it can operate in a platform that
provides only 32 mA at 3.3 volts average current
(of course at reduced performance) or in a platform
that provides 90 mA at full performance. Please
see the Set Features command for details.
1.7.8Power Supply Requirements
This is a dual voltage product which means it
will operate at a voltage range of 3.30 volts ± 5%
or 5.00 volts ± 10% (± 5% for industrial versions).
Per the PCMCIA specification section 2.1.1, the
host system must apply 0 volts in order to change a
voltage range. This same procedure of providing 0
volts to the card is required if the host system
applies an input voltage outside the desired
voltage by more than 20%. This means less than
4.0 volts for the 5.00 volt range and less than 2.70
volts for the 3.30 volt range.
When the host is ready to access the SDP3B
FlashDisk and it is in sleep mode, any command
issued to the SDP3B FlashDisk will cause it to
exit sleep and respond. The host does not have to
follow the ATA protocol of issuing a reset first. It
may do this if desired, but it is not needed. By not
issuing the reset, performance is improved
through the reduction of overhead but this must be
done only for the SanDisk products as other ATA
products may not support this feature.
For all the following specifications, values are
defined at ambient temperature and nominal
supply voltage unless otherwise stated.
2.1SDP3B FlashDisk System
Environmental Specifications
SDP3B
(Standard Version)
TemperatureOperating:
Non-Operating:
HumidityOperating:
Non-Operating:
Acoustic Noise:0 dB0 dB
VibrationOperating:
Non-Operating:
ShockOperating:
Non-Operating:
0° C to 60° C
-25° C to 85° C
8% to 95%, non-condensing
8% to 95%, non-condensing
15 G peak to peak max.
15 G peak to peak max.
1,000 G max.
1,000 G max.
2.2SDP3B FlashDisk System Power
Requirements
SDP3B
(Standard Version)
DC Input Voltage (VCC)
100 mV max. ripple (p-p)
+5 V Currents
(maximum Average value)
See Notes 1 to 3.
Capacities of
85 MB & Lower
Sleep:
Reading:
Writing:
Read/Write Peak
Capacities
above 85 MB
Sleep:
Reading:
Writing:
Read/Write Peak
3.3V ±5%5V ± 10%3.3V ±5%5V ±5% Only
200 µA
(Slow - Fast)
32 mA - 45 mA
32 mA - 60 mA
150 mA/50µs
200 µA
(Slow - Fast)
32 mA - 50 mA
32 mA - 70 mA
150 mA/50µs
500 µA
(Slow - Fast)
46 mA - 75 mA
46 mA - 90 mA
150 mA/50µs
500 µA
(Slow - Fast)
46 mA - 90 mA
46 mA - 110 mA
150 mA/50µs
SDP3BI
(Industrial Version)
-40° to 85° C
-50° to 100° C
8% to 95%, non-condensing
8% to 95%, non-condensing
15 G peak to peak max.
15 G peak to peak max.
1,000 G max.
1,000 G max.
SDP3BI
(Industrial Version)
200 µA
(Slow - Fast)
32 mA - 45 mA
32 mA - 60 mA
150 mA/50µs
200 µA
(Slow - Fast)
32 mA - 50 mA
32 mA - 70 mA
150 mA/50µs
500 µA
(Slow - Fast)
46 mA - 75 mA
46 mA - 90 mA
150 mA/50µs
500 µA
(Slow - Fast)
46 mA - 90 mA
46 mA - 110 mA
150 mA/50µs
Note 1. All values quoted are typical at ambient temperature and nominal supply voltage unless otherwise stated.
Note 2. Sleep mode currently is specified under the condition that all card inputs are static CMOS levels and in a
“Not Busy” operating state.
Note 3. The currents specified show the bounds of programmability of the product.
All performance timings assume the SDP3B
FlashDisk controller is in the default (i.e.,
fastest) mode.
SDP3B FlashDisk Product Manual
Start Up TimesSleep to write:
Sleep to read:
Reset to ready:
Active to Sleep DelayProgrammable
Data Transfer Rate
To/From Flash
Data Transfer Rate
To/From Host
Controller Overhead Command to DRQ 1.25 msec maximum
Note:The Sleep to Write and Sleep to Read times are the times it takes the SDP3B FlashDisk to exit sleep mode
when any command is issued by the host to when the card is reading or writing. SDP3B FlashDisks do not
require a reset to exit sleep mode. See section 1.7.6.
2.5 msec maximum
2.0 msec maximum
50 msec typical
400 msec maximum
4.0 MBytes/sec burst for Type II SDP3B FlashDisk
3.0 MBytes/sec burst for Type III SDP3B FlashDisk
6.0 MBytes/sec burst
2.4System Reliability and
Maintenance
MTBF (@ 25°C) 1,000,000 hours for Type II SDP3B FlashDisk
500,000 hours for Type III SDP3B FlashDisk
Preventive Maintenance None
Data Reliability
Endurance SDP3B-XX 300,000 erase / program cycles per logical sector
Endurance SDP3BI-XX Industrial Product 100,000 erase / program cycles per logical sector
<1 non-recoverable error in 1014 bits read
guaranteed
guaranteed
2.5Physical Specifications
Refer to the following table and to Figures 2-1 and
2-2 for additional information.
SDP3B Type II FlashDisksSDP3B Type III FlashDisks
Weight:43 g. (1.52 oz.) maximum90 g. (3.2 oz.) maximum
Length:85.6 ± 0.20 mm (3.370 ± .008 in.)85.6 ± 0.20 mm (3.370 ± .008 in.)
Width:54.0 ± 0.10 mm (2.126 ± .004 in.)54.0 ± 0.10 mm (2.126 ± .004 in.)
Thickness:5.0 mm max. (.1968 in.)10.5 mm max. (0.413 in.)
SDP3B-110Type II or III110,100,480 bytes215,040832840
SDP3B-175Type II or III175,374,336 bytes342,5281232892
SDP3B-220Type II or III220,200,960 bytes430,0801632840
The Type II SDP3B FlashDisks fit into any
standard PCMCIA Type II (5 mm) or Type III (10.5
mm) socket. The Type III SDP3B FlashDisks only
fit into Type III PCMCIA sockets.
The host is connected to the SDP3B FlashDisk
using a standard 68 pin PCMCIA connector
consisting of two rows of 34 female contacts each on
50 mil (1.27 mm) centers.
4.1.1Pin Assignments and Pin Type
The signal/pin assignments are listed in Table 4-1.
Low active signals have a “-” prefix. Pin types are
Input, Output or Input/Output. Table 4-2 defines
the DC characteristics for all input and output
type structures.
4.2Electrical Description
The SDP3B FlashDisk is optimized for operation
with hosts which support the PCMCIA I/O
interface standard conforming to the PC Card ATA
specification. However, the SDP3B FlashDisk
may also be configured to operate in systems that
support only the memory interface standard. The
configuration of the SDP3B FlashDisk will be
controlled using the standard PCMCIA
configuration registers starting at address 200h in
the Attribute Memory space of the SDP3B
FlashDisk.
Table 4-2 describes the I/O signals. Signals whose
source is the host are designated as inputs while
signals that the SDP3B FlashDisk sources are
outputs. The SDP3B FlashDisk logic levels
conform to those specified in the PCMCIA Release
2.1 specification. Refer to section 4.3 for
definitions of Input and Output type.
I27, 28, 29In True IDE Mode only A[2:0] are used to select the one of eight
I/O63This signal is asserted high as the BVD1 signal since a battery
I/O62This output line is always driven to a high state in Memory Mode
O36, 67These Card Detect pins are connected to ground on the SDP3B
I7, 42These input signals are used both to select the card and to
These address lines along with the -REG signal are used to
select the following: The I/O port address registers within the
SDP3B FlashDisk, the memory mapped port address registers
within the card, a byte in the card's information structure and its
configuration control and status registers.
This signal is the same as the PC Card Memory Mode signal.
registers in the Task File.
In True IDE Mode, these remaining address lines should be
grounded by the host.
is not used with this product.
This signal is asserted low to alert the host to changes in the
RDY/-BSY and Write Protect states, while the I/O interface is
configured. Its use is controlled by the Card Config and Status
Register.
In the True IDE Mode, this input / output is the Pass Diagnostic
signal in the Master / Slave handshake protocol.
since a battery is not required for this product.
This output line is always driven to a high state in I/O Mode
since this product does not support the audio function.
In the True IDE Mode, this input/output is the Disk Active/Slave
Present signal in the Master/Slave handshake protocol.
FlashDisk. They are used by the host to determine if the product
is fully inserted into its socket.
This signal is the same for all modes.
This signal is the same for all modes.
indicate to the card whether a byte or a word operation is being
performed. -CE2 always accesses the odd byte of the word.
-CE1 accesses the even byte or the Odd byte of the word
depending on A0 and -CE2. A multi-plexing scheme based on
A0, -CE1, -CE2 allows 8 bit hosts to access all data on D0-D7.
See Tables 4-11, 4-12, 4-15, and 4-16.
This signal is the same as the PC Card Memory Mode signal.
In the True IDE Mode -CS0 is the chip select for the task file
registers while -CS1 is used to select the Alternate Status
Register and the Device Control Register.
This internally pulled up signal is used to configure this device
as a Master or a Slave when configured in the True IDE Mode.
When this pin is grounded, this device is configured as a
Master. When the pin is open, this device is configured as a
Slave.
I/O41, 40, 39, 38,
37, 66, 65, 64,
6, 5, 4, 3, 2,
32, 31, 30
--1, 34, 35, 68Ground.
O60This signal is not used in this mode.
I44This signal is not used in this mode.
These lines carry the Data, Commands and Status information
between the host and the controller. D00 is the LSB of the Even
Byte of the Word. D08 is the LSB of the Odd Byte of the Word.
This signal is the same as the PC Card Memory Mode signal.
In True IDE Mode, all Task File operations occur in byte mode on
the low order bus D00-D07 while all data transfers are 16 bit
using D00-D15.
This signal is the same for all modes.
This signal is the same for all modes.
The Input Acknowledge signal is asserted by the SDP3B
FlashDisk when the card is selected and responding to an I/O
read cycle at the address that is on the address bus. This signal
is used by the host to control the enable of any input data
buffers between the card and the CPU.
In True IDE Mode this output signal is not used and should not
be connected at the host.
This is an I/O Read strobe generated by the host. This signal
gates I/O data onto the bus from the SDP3B FlashDisk when the
card is configured to use the I/O interface.
In True IDE Mode, this signal has the same function as in PC
Card I/O Mode.
The I/O Write strobe pulse is used to clock I/O data on the Card
Data bus into the SDP3B FlashDisk controller registers when the
product is configured to use the I/O interface.
The clocking will occur on the negative to positive edge of the
signal (trailing edge).
In True IDE Mode, this signal has the same function as in PC
Card I/O Mode.
I9This is an Output Enable strobe generated by the host interface.
It is used to read data from the SDP3B FlashDisk in Memory
Mode and to read the CIS and configuration registers.
In PC Card I/O Mode, this signal is used to read the CIS and
configuration registers.
To enable True IDE Mode this input should be grounded by the
host.
O16In Memory Mode this signal is set high when the SDP3B
FlashDisk is ready to accept a new data transfer operation and
held low when the card is busy. The Host memory card socket
must provide a pull-up resistor.
At power up and at Reset, the RDY/-BSY signal is held low
(busy) until the SDP3B FlashDisk has completed its power up or
reset function. No access of any type should be made to the
SDP3B FlashDisk during this time. The RDY/-BSY signal is held
high (disabled from being busy) whenever the following condition
is true: The SDP3B FlashDisk has been powered up with
+RESET continuously disconnected or asserted.
I/O Operation - After the SDP3B FlashDisk Card has been
configured for I/O operation, this signal is used as -Interrupt
Request. This line is strobed low to generate a pulse mode
interrupt or held low for a level mode interrupt.
In True IDE Mode signal is the active high Interrupt Request to
the host.
I61This signal is used during Memory Cycles to distinguish between
Common Memory and Register (Attribute) Memory accesses.
High for Common Memory, Low for Attribute Memory.
The signal must also be active (low) during I/O Cycles when the
I/O address is on the Bus.
In True IDE Mode this input signal is not used and should be
connected to VCC by the host.
I58When the pin is high, this signal resets the SDP3B FlashDisk.
The card is Reset only at power up if this pin is left high or open
from power-up. The card is also reset when the Soft Reset bit in
the Card Configuration Option Register is set.
This signal is the same as the PC Card Memory Mode signal.
In the True IDE Mode this input pin is the active low hardware
reset from the host.
--17, 51+5 V, +3.3 V power.
This signal is the same for all modes.
This signal is the same for all modes.
18, 52Programming Voltage power supply is not connected on the
SDP3B FlashDisk products.
This signal is the same for all modes.
This signal is the same for all modes.
O43
57
O59The -WAIT signal is driven low by the SDP3B FlashDisk to signal
Voltage Sense Signals. -VS1 is grounded so that the SDP3B
FlashDisk CIS can be read at 3.3 volts and -VS2 is open and
reserved by PCMCIA for a secondary voltage.
This signal is the same for all modes.
This signal is the same for all modes.
the host to delay completion of a memory or I/O cycle that is in
progress.
This signal is the same as the PC Card Memory Mode signal.
In True IDE Mode this output signal may be used as IORDY.
-WE
(PC Card Memory Mode)
-WE
(PC Card I/O Mode)
-WE
(True IDE Mode)
I15This is a signal driven by the host and used for strobing memory
write data to the registers of the SDP3B FlashDisk when the
card is configured in the memory interface mode. It is also used
for writing the configuration registers.
In PC Card I/O Mode, this signal is used for writing the
configuration registers.
In True IDE Mode this input signal is not used and should be
connected to VCC by the host.
O33Memory Mode - The SDP3B FlashDisk does not have a write
protect switch. This signal is held low after the completion of the
reset initialization sequence.
I/O Operation - When the SDP3B FlashDisk is configured for I/O
Operation, Pin 24 is used for the -I/O Selected is 16 Bit Port
(-IOIS16) function. A Low signal indicates that a 16 bit or odd
byte only operation can be performed at the addressed port.
In True IDE Mode this output signal is asserted low when this
device is expecting a word data transfer cycle.
There are two types of bus cycles and timing
sequences that occur in the PCMCIA type
interface, a direct mapped I/O transfer and a
memory access. The two timing sequences are
explained in detail in the PCMCIA PC Card
Standard Release 2.1. The SDP3B FlashDisk
conforms to the timing in that reference document.
Table 4-3 Attribute Memory Read Timing
Speed Version300 ns
ItemSymbolIEEE SymbolMin ns.Max ns.
Read Cycle Timetc(R)tAVAV300
Address Access Timeta(A)tAVQV300
Card Enable Access Timeta(CE)tELQV300
Output Enable Access Timeta(OE)tGLQV150
Output Disable Time from CEtdis(CE)tEHQZ100
Output Disable Time from OEtdis(OE)tGHQZ100
Address Setup Timetsu (A)tAVWL30
Output Enable Time from CEten(CE)tELQNZ5
Output Enable Time from OEten(OE)tGLQNZ5
Data Valid from Address Changetv(A)tAXQX0
4.3.6Attribute Memory Read Timing
Specification
The Attribute Memory access time is defined as
300 ns. Detailed timing specifications are shown
in Table 4-3.
tc(R)
An
-REG
ta(A)
tsu(A)
ta(CE)
tv(A)
-CE
ten(CE)
ta(OE)
tdis(CE)
-OE
ten(OE)
tdis(OE)
Dout
Figure 4-1 Attribute Memory Read Timing Diagram
Notes:All times are in nanoseconds. Dout signifies data provided by the SDP3B FlashDisk to the system. The -CE
signal or both the -OE signal and the -WE signal must be de-asserted between consecutive cycle
operations.