SanDisk CompactFlash Product Manual

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CompactFlash

Memory Card

Product Manual

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408-542-0500

FAX: 408-542-0503

SanDisk® Corporation general policy does not recommend the use of its products in life support applications where in a failure or malfunction of the product may directly threaten life or injury. Per SanDisk Terms and Conditions of Sale, the user of SanDisk products in life support applications assumes all risk of such use and indemnifies SanDisk against all damages.

The information in this manual is subject to change without notice. SanDisk Corporation shall not be liable for technical or editorial errors or omissions contained herein; nor for incidental or

consequential damages resulting from the furnishing, performance, or use of this material. All parts of the SanDisk CompactFlash Memory Card documentation are protected by copyright law and all rights are

reserved. This documentation may not, in whole or in part, be copied, photocopied, reproduced, translated, or reduced to any electronic medium or machine readable form without prior consent, in writing, from SanDisk Corporation.

SanDisk and the SanDisk logo are registered trademarks of SanDisk Corporation. ImageMate, CompactFlash and CF are trademarks of SanDisk Corporation.

Product names mentioned herein are for identification purposes only and may be trademarks and/or registered trademarks of their respective companies.

5,070,032; 5,095,344; 5,168,465; 5,172,338; 5,198,380; 5,200,959; 5,268,318; 5,268,870; 5,272,669. Other U.S. and foreign patents awarded and pending.

Lit. No. 20-10-00038 Rev 4 2/98 Printed in U.S.A.

CompactFlash Memory Card Product Manual

Table of Contents

1.0 Introduction to the CompactFlash Memory Card....................................................7

1.1 Scope...............................................................................................................................8

1.2 Product Models.................................................................................................................8

1.3 System Features...............................................................................................................8

1.4 PCMCIA Standard...........................................................................................................9

1.5 CompactFlash Specification............................................................................................9

1.6 Related Documentation....................................................................................................9

1.7 CompactFlash Memory Cards Compared to the SanDisk FlashDisk Products.....................9

1.7.1 System Power Requirements................................................................................10

1.7.2 Card Information Structure (CIS)........................................................................10

1.7.3 Capacity Specifications.....................................................................................11

1.7.4 Voltage Sense Signal -VS1.................................................................................11

1.7.5 True IDE Mode...................................................................................................11

1.7.6 Identify Drive Information.................................................................................12

1.8 Functional Description...................................................................................................12

1.8.1 Flash Technology Independence..........................................................................12

1.8.2 Defect and Error Management.............................................................................12

1.8.3 Endurance .........................................................................................................13

1.8.4 Wear Leveling...................................................................................................13

1.8.5 Using the Erase Sector and Write without Erase Commands.................................13

1.8.5.1 Interaction with Systems not Aware of the Erase Sector and

Write without Erase Commands..........................................................13

1.8.5.2 Limitations and Issues.........................................................................13

1.8.6 Automatic Sleep Mode.......................................................................................14

1.8.7 Dynamic Adjustment of Performance versus Power Consumption...........................14

1.8.8 Power Supply Requirements................................................................................14

2.0 Product Specifications................................................................................15

2.1 System Environmental Specifications.............................................................................15

2.2 System Power Requirements............................................................................................15

2.3 System Performance.......................................................................................................16

2.4 System Reliability and Maintenance..............................................................................16

2.5 Physical Specifications..................................................................................................16

2.6 Capacity Specifications.................................................................................................19

3.0 Installation .............................................................................................20

3.1 Mounting........................................................................................................................20

4.0 CompactFlash Memory Card Interface Description...............................................21

4.1 Physical Description......................................................................................................21

4.1.1 Pin Assignments and Pin Type.............................................................................21

4.2 Electrical Description....................................................................................................21

4.3 Electrical Specification..................................................................................................28

4.3.1 Input Leakage Current........................................................................................28

4.3.2 Input Characteristics.........................................................................................28

4.3.3 Output Drive Type.............................................................................................29

4.3.4 Output Drive Characteristics.............................................................................29

CompactFlash Memory Card Product Manual

Table of Contents (continued)

4.3.5 Interface/Bus Timing..........................................................................................30

4.3.6 Attribute Memory Read Timing Specification.....................................................30

4.3.7 Attribute Memory Write Timing Specification....................................................31

4.3.8 Common Memory Read Timing Specification.......................................................32

4.3.9 Common Memory Write Timing Specification......................................................33

4.3.10 I/O Input (Read) Timing Specification................................................................34

4.3.11 I/O Output (Write) Timing Specification............................................................35

4.3.12 True IDE Mode I/O Input (Read) Timing Specification.........................................36

4.3.13 True IDE Mode I/O Output (Write) Timing Specification.....................................37

4.4 Card Configuration........................................................................................................38

4.4.1 Attribute Memory Function.................................................................................39

4.4.2 Configuration Option Register (Address 200h in Attribute Memory).....................40

4.4.3 Card Configuration and Status Register (Address 202h in Attribute Memory).......40

4.4.4 Pin Replacement Register (Address 204h in Attribute Memory)............................41

4.4.5 Socket and Copy Register (Address 206h in Attribute Memory)............................42

4.5 I/O Transfer Function.....................................................................................................43

4.5.1 I/O Function.......................................................................................................43

4.6 Common Memory Transfer Function.................................................................................44

4.6.1 Common Memory Function...................................................................................44

4.7 True IDE Mode I/O Transfer Function..............................................................................45

4.7.1 True IDE Mode I/O Function................................................................................45

5.0 ATA Drive Register Set Definition and Protocol..................................................46

5.1 I/O Primary and Secondary Address Configurations........................................................47

5.2 Contiguous I/O Mapped Addressing................................................................................48

5.3 Memory Mapped Addressing..........................................................................................49

5.4 True IDE Mode Addressing..............................................................................................50

5.5 ATA Registers................................................................................................................51

5.5.1 Data Register (Address - 1F0[170]; Offset 0,8,9)...................................................51

5.5.2 Error Register (Address - 1F1[171]; Offset 1, 0Dh Read Only)...............................52

5.5.3 Feature Register (Address - 1F1[171]; Offset 1, 0Dh Write Only)..........................52

5.5.4 Sector Count Register (Address - 1F2[172]; Offset 2).............................................52

5.5.5 Sector Number (LBA 7-0) Register (Address - 1F3[173]; Offset 3)..........................52

5.5.6 Cylinder Low (LBA 15-8) Register (Address - 1F4[174]; Offset 4).........................52

5.5.7 Cylinder High (LBA 23-16) Register (Address - 1F5[175]; Offset 5)......................52

5.5.8 Drive/Head (LBA 27-24) Register (Address 1F6[176]; Offset 6)............................53

5.5.9 Status & Alternate Status Registers (Address 1F7[177]&3F6[376]; Offsets 7 & Eh) 54

5.5.10 Device Control Register (Address - 3F6[376]; Offset Eh).......................................54

5.5.11 Card (Drive) Address Register (Address 3F7[377]; Offset Fh)..............................55

6.0 ATA Command Description .........................................................................56

6.1 ATA Command Set.........................................................................................................56

6.1.1 Check Power Mode - 98H, E5H............................................................................58

6.1.2 Execute Drive Diagnostic - 90H...........................................................................58

6.1.3 Erase Sector(s) - C0H..........................................................................................59

6.1.4 Format Track - 50H............................................................................................60

6.1.5 Identify Drive - ECH.........................................................................................60

CompactFlash Memory Card Product Manual

Table of Contents (continued)

6.1.5.1 General Configuration.........................................................................62

6.1.5.2 Default Number of Cylinders..............................................................62

6.1.5.3 Default Number of Heads....................................................................62

6.1.5.4 Number of Unformatted Bytes per Track..............................................62

6.1.5.5 Number of Unformatted Bytes per Sector..............................................62

6.1.5.6 Default Number of Sectors per Track....................................................62

6.1.5.7 Number of Sectors per Card..................................................................62

6.1.5.8 Memory Card Serial Number...............................................................62

6.1.5.9 Buffer Type.........................................................................................62

6.1.5.10 Buffer Size..........................................................................................62

6.1.5.11 ECC Count...........................................................................................62

6.1.5.12 Firmware Revision..............................................................................62

6.1.5.13 Model Number....................................................................................62

6.1.5.14 Read/Write Multiple Sector Count......................................................63

6.1.5.15 Double Word Support..........................................................................63

6.1.5.16 Capabilities.......................................................................................63

6.1.5.17 PIO Data Transfer Cycle Timing Mode.................................................63

6.1.5.18 DMA Data Transfer Cycle Timing Mode...............................................63

6.1.5.19 Translation Parameters Valid.............................................................63

6.1.5.20 Current Number of Cylinders, Heads, Sectors/Track.............................63

6.1.5.21 Current Capacity................................................................................63

6.1.5.22 Multiple Sector Setting.......................................................................63

6.1.5.23 Total Sectors Addressable in LBA Mode...............................................63

6.1.6 Idle - 97H, E3H..................................................................................................64

6.1.7 Idle Immediate - 95H, E1H.................................................................................64

6.1.8 Initialize Drive Parameters - 91H......................................................................65

6.1.9 Read Buffer - E4H..............................................................................................65

6.1.10 Read Multiple - C4H..........................................................................................66

6.1.11 Read Long Sector - 22H, 23H...............................................................................67

6.1.12 Read Sector(s) - 20H, 21H...................................................................................67

6.1.13 Read Verify Sector(s) - 40H, 41H........................................................................68

6.1.14 Recalibrate - 1XH..............................................................................................68

6.1.15 Request Sense - 03H............................................................................................69

6.1.16 Seek - 7XH.........................................................................................................70

6.1.17 Set Features - EFH.............................................................................................70

6.1.18 Set Multiple Mode - C6H....................................................................................72

6.1.19 Set Sleep Mode- 99H, E6H..................................................................................72

6.1.20 Standby - 96H, E2H............................................................................................73

6.1.21 Standby Immediate - 94H, E0H..........................................................................73

6.1.22 Translate Sector - 87H........................................................................................74

6.1.23 Wear Level - F5H..............................................................................................75

6.1.24 Write Buffer - E8H.............................................................................................75

6.1.25 Write Long Sector - 32H, 33H..............................................................................76

6.1.26 Write Multiple Command - C5H.........................................................................76

6.1.27 Write Multiple without Erase - CDH.................................................................78

6.1.28 Write Sector(s) - 30H, 31H.................................................................................78

6.1.29 Write Sector(s) without Erase - 38H...................................................................79

6.1.30 Write Verify Sector(s) - 3CH..............................................................................80

6.2 Error Posting..................................................................................................................81

CompactFlash Memory Card Product Manual

Table of Contents (continued)

7.0 CIS Description .......................................................................................83

Ordering Information and Technical Support.............................................................99

Ordering Information.............................................................................................................101

CompactFlash Memory Card.........................................................................................101

SanDisk ImageMate™ CompactFlash Drive.................................................................101

CompactFlash Memory Card Evaluation Kit.................................................................101

System Software, Card Reader/Writers and Connectors

Compatible with the SanDisk CompactFlash Memory Cards........................................102

Technical Support Services.....................................................................................................105

Direct SanDisk Technical Support.................................................................................105

SanDisk On-line Services..............................................................................................105

SanDisk Worldwide Web Site...........................................................................105

Compuserve......................................................................................................105

SanDisk Sales Offices......................................................................................107

Appendix CompactFlash Connector Specifications....................................................111

Limited Warranty ...........................................................................................121

CompactFlash Memory Card Product Manual

1.0 Introduction to the CompactFlash Memory Card

The SanDisk CompactFlash™ Memory Card (CF™) products provide high capacity solid state flash memory that electrically complies with the Personal Computer Memory Card International Association ATA (PC Card ATA) standard. (In Japan, the applicable standards group is JEIDA.) The CompactFlash Memory Card Series also supports a True IDE Mode that is electrically compatible with an IDE disk drive. CompactFlash Memory Cards provide up to 48 million bytes (Megabytes, MBytes or MB) of formatted storage capacity and with the PCMCIA Adapter SDCF-03 can be used in any system that has a PCMCIA Type II or Type III socket.

The CompactFlash Memory Card Series uses SanDisk Flash memory chips which were designed by SanDisk specifically for use in mass storage applications. In addition to the mass storage specific Flash memory chips, the CompactFlash Memory Cards include an on-card intelligent controller that provides a high level interface to the host computer. This interface allows a host computer to issue commands to the memory card to read or write blocks of memory. A block of memory consists of 512 bytes of data and is protected by a powerful Error Correcting Code (ECC).

The CompactFlash Memory Card on-card intelligent controller manages interface protocols, data storage and retrieval as well as ECC, defect handling and diagnostics, power management and clock control. Once the CompactFlash Memory Card has been configured by the host, it appears to the host as a standard ATA (IDE) disk drive. Additional ATA commands have been provided to enhance system performance.

CompactFlash Memory Cards are offered in a variety of capacities up to 48 MB. The host system can support as many cards as there are CompactFlash and Type II or III PCMCIA card slots. CompactFlash Memory Cards require the PCMCIA Adapter SDCF-03 to be used in a PCMCIA Type II or Type III socket.

SanDisk also offers an industrial version of the CompactFlash Memory Card Series, which has a broader operating and non-operating temperature range than the standard product. Please see Section 2 for detailed specifications.

Figure 1-1 CompactFlash Memory Card Block Diagram

CompactFlash Memory Card Product Manual

1.1 Scope

This document describes the key features and specifications of CompactFlash Memory Cards, as well as the information required to interface this product to a host system.

Capacity (formatted) Standard Model Industrial Model

2.0 MB SDCFB-2 SDCFBI-2

4.0 MB SDCFB-4 SDCFBI-4

6.0 MB SDCFB-6 SDCFBI-6

8.0 MB SDCFB-8 SDCFBI-8

10.0 MB SDCFB-10 SDCFBI-10

15.0 MB SDCFB-15 SDCFBI-15

20.0 MB SDCFB-20 SDCFBI-20

24.0 MB SDCFB-24 SDCFBI-24

30.0 MB SDCFB-30 SDCFBI-30

40.1 MB SDCFB-40 SDCFBI-40

48.1 MB SDCFB-48 SDCFBI-48

1.2 Product Models

The CompactFlash Memory Card Series is available in a variety of capacities as shown in the following table. The CompactFlash Memory Card is also available with Windows and DOS compatible compression software preloaded. All models are shipped formatted with a DOS 5.0 file structure.

1.3 System Features

• The industry's smallest form factor

• Up to 48 MBytes of mass storage data

• PC Card ATA protocol compatible

• True IDE Mode compatible

• Very low CMOS power

• Very high performance

• Programmable power versus performance

• Very rugged

• Low weight

• Noiseless

• Low Profile

• +5 Volts or +3.3 Volts operation

• Automatic error correction and retry capabilities

• Supports power down commands and sleep modes

• Non-volatile storage (no battery required)

• MTBF >1,000,000 hours

• Minimum 10,000 insertions

• Standard (SDCFB Series) and Industrial versions (SDCFBI Series)

CompactFlash Memory Card Product Manual

1.4 PCMCIA Standard

CompactFlash Memory Cards are fully electrically compatible with the PCMCIA specifications listed below. These specifications may be obtained from:

PCMCIA 2635 North First St., Ste. 209 San Jose, CA 95131 USA Phone: 408-433-2273 FAX: 408-433-9558

1) PCMCIA PC Card Standard, January 1995

2) PCMCIA PC Card ATA Specification, January 1995

1.5 CompactFlash Specification

CompactFlash Memory Cards are fully compatible with the CompactFlash Specification published by the CompactFlash Association. Contact the CompactFlash Association for more information.

CompactFlash Association P.O. Box 51537 Palo Alto, CA 94303 USA Phone: 415-843-1220 FAX: 415-493-1871 www.compactflash.org

1.6 Related Documentation

1) American National Standard X3.221 AT Attachment for Interface for Disk Drives Document

This document can be ordered from Global Engineering Documents by calling 1-800-854-7179.

1.7 CompactFlash Memory Cards Compared to the SanDisk FlashDisk Products

The CompactFlash Memory Card Series, when used with the PCMCIA Adapter SDCF-03, is compatible with SanDisk’s previous FlashDisk products, the SDP, SDP5, SDP5A and the current SDP5B product. The CompactFlash Memory Card is not compatible with the SDP5L which was designed specifically for the HP95LX. Therefore, the CompactFlash Memory Card is not system compatible with the HP95LX. For this document, any of these products are defined as the SDP Series products. Differences between the CompactFlash Memory Card and the FlashDisk that could be noticed by previous FlashDisk users are explained in the following sections.

CompactFlash Memory Card Product Manual

1.7.1 System Power Requirements

The system power requirements for the CompactFlash Memory Card are different from

below show the SDP5A FlashDisk and the CompactFlash Memory Card power requirements.

those of the SDP5A FlashDisk. The two tables

SDCFB-XX

(Standard Version)

DC Input Voltage (VCC) 100 mV max. ripple (p-p)

+5 V Currents (maximum Average value) See Notes 1 to 3.

Read/Write Peak

Note 1. All values quoted are typical at ambient temperature and nominal supply voltage unless otherwise stated. Note 2. Sleep mode currently is specified under the condition that all card inputs are static CMOS levels and in a

“Not Busy“ operating state.

Note 3. The currents specified show the bounds of programmability of the product.

Model SDP5A Standard FlashDisk Industrial FlashDisk

DC Input Voltage (VPP) (Note 4) Not Used Not Used DC Input Voltage (VCC)

100 mv max. ripple (p-p) +5 V Currents

(maximum average value) See Notes 1 to 5

Sleep:

Reading:

Writing:

Reading:

Writing:

Sleep:

3.3V ±5% 5V ± 10% 3.3V ±5% 5 V ±5%

200 µA (Slow - Fast) 32 mA - 45 mA 32 mA - 60 mA 150 mA/50µs

5 V ±10% 5 V ±5%

≤ 1 mA (Slow - Fast) 36 mA - 100 mA 36 mA - 125 mA

500 µA (Slow - Fast) 46 mA - 75 mA 46 mA - 90 mA 150 mA/50µs

200 µA (Slow - Fast) 32 mA - 45 mA 32 mA - 60 mA 150 mA/50µs

≤ 1 mA (Slow - Fast) 36 mA - 100 mA 36 mA - 125 mA

SDCFBI-XX

(Industrial Version)

500 µA (Slow - Fast) 46 mA - 75 mA 46 mA - 90 mA 150 mA/50µs

Type III

Reading:

Writing:

Note 1. Sleep mode current is specified under the condition that all FlashDisk inputs are at static CMOS levels and

in a “Not Busy” operating state.

Note 2. The currents specified show the complete range of programmability in the PC Card ATA FlashDisk. A

tradeoff between performance and maximum current used can be done using the Set Features command. The FlashDisk defaults to the fastest speed and highest current. See the Set Features command for more details.

Note 3. For information on peak currents during power on, hot insertion and writing, please contact SanDisk

Technical Support at (408) 542-0400. Note 4. The Vpp pins are not connected in this product. Note 5. At maximum performance, typical average Read current is 70 mA and typical average write current is 100

mA.

36 mA - 125 mA 36 mA - 150 mA

1.7.2 Card Information Structure (CIS)

The Card Information Structure (CIS) of the CompactFlash Memory Card is different from the SDP5A FlashDisk CIS. The CompactFlash Memory Card CIS indicates support for twin card

and 3.3 volt operation which are not supported in the SDP5A FlashDisk. Both the SDP5A FlashDisk and the CompactFlash Memory Card support 5 volt operation.

1.7.3 Capacity Specifications

CompactFlash Memory Card Product Manual

The capacity specifications for the SDP5A FlashDisk are different from the capacity

of the SDP5A FlashDisk and the CompactFlash

Memory Card. specifications of the CompactFlash Memory Card. The tables below show the capacity specifications

Model Number Capacity

(formatted)

SDP5A-5 5,242,880 bytes 10,240 2 32 160 SDP5A-10 10,485,760 bytes 20,480 2 32 320 SDP5A-20 20,971,520 bytes 40,960 2 32 640 SDP5A-40 41,943,040 bytes 81,920 4 32 640

SDP5A-110 110,100,480 bytes 215,040 8 32 840 SDP5A-175 175,374,336 bytes 342,528 12 32 892

Model Number Capacity

(formatted)

SDCFB-2 2,015,232 bytes 3936 2 16 123

SDCFB-4 4,030,464 bytes 7872 2 32 123

SDCFB-6 6,029,312 bytes 11,776 2 32 184

SDCFB-8 8,028,160 bytes 15,680 2 32 245

SDCFB-10 10,485,760 bytes 20,480 2 32 320 SDCFB-15 15,007,744 bytes 29,312 2 32 458 SDCFB-20 20,054,016 bytes 39,168 2 32 612 SDCFB-24 24,051,712 bytes 46,976 2 32 734 SDCFB-30 30,081,024 bytes 58,752 6 32 306 SDCFB-40 40,108,032 bytes 78,336 4 32 612 SDCFB-48 48,103,424 bytes 93,952 4 32 734

Sectors/Card

(Max LBA+1)

Sectors/Card

(Max LBA+1)

Note: SanDisk defines a megabyte as one million

bytes.

No. of Heads

No. of

Heads

No. of

Sectors/

Track

No. of

Sectors/

Track

No. of

Cylinders

No. of

Cylinders

1.7.4 Voltage Sense Signal -VS1

The Voltage Sense Signal -VS1, pin 43, of the CompactFlash Memory Card is grounded because the Card Information Structure (CIS) can be read at 3.3 volts. In the earlier SDP5A FlashDisk, this pin is not grounded because the SDP5A FlashDisk CIS can only be read at 5 volts.

Note: In some early platforms, the -VS1 pin (pin 43) is

also the Refresh pin for DRAM cards. Plugging the CompactFlash Memory Card into a platform supporting the Refresh pin will hang the bus.

1.7.5 True IDE Mode

The CompactFlash Memory Card differs from the SDP5A FlashDisk in that it can be configured in True IDE Mode. See section 4.6 True IDE Mode I/O Transfer Function.

CompactFlash Memory Card Product Manual

1.7.6 Identify Drive Information

Word 51 of the Identify Drive Command information has a default value of 0000H for the SDP5A FlashDisk. The data field type information for this word is “PIO data transfer cycle timing mode 0.”

For the CompactFlash Memory Card, word 51 of the Identify Drive Command information has a default value of 0001H. The data field type information for this word is “PIO data transfer cycle timing mode 1.”

1.8 Functional Description

CompactFlash Memory Cards contain a high level, intelligent subsystem as shown in the block diagram, Figure 1-1. This intelligent (microprocessor) subsystem provides many capabilities not found in other types of memory cards. These capabilities include:

1. Standard ATA register and command set (same as found on most magnetic disk drives).

2. Host independence from details of erasing and programming flash memory.

3. Sophisticated system for managing defects (analogous to systems found in magnetic disk drives).

4. Sophisticated system for error recovery including a powerful error correction code (ECC).

5. Power management for low power operation.

1.8.1 Flash Technology Independence

The 512 byte sector size of CompactFlash Memory Card is the same as that in an IDE magnetic disk drive. To write or read a sector (or multiple sectors), the host computer software simply issues a Read or Write command to the CompactFlash Memory Card. This command contains the address and the number of sectors to write/read. The host software then waits for the command to complete. The host software does not get involved in the

details of how the flash memory is erased, programmed or read. This is extremely important as flash devices are expected to get more and more complex in the future. Since the CompactFlash Memory Card Series uses an intelligent on-board controller, the host system software will not require changing as new flash memory evolves. In other words, systems that support the CompactFlash Memory Card today will be able to access future SanDisk cards built with new flash technology without having to update or change host software.

1.8.2 Defect and Error Management

CompactFlash Memory Cards contain a sophisticated defect and error management system. This system is analogous to the systems found in magnetic disk drives and in many cases offers enhancements. For instance, disk drives do not typically perform a read after write to confirm the data is written correctly because of the performance penalty that would be incurred. CompactFlash Memory Cards do a read after write under margin conditions to verify that the data is written correctly (except in the case of a Write without Erase Command). In the rare case that a bit is found to be defective, CompactFlash Memory Cards replace this bad bit with a spare bit within the sector header. If necessary, CompactFlash Memory Cards will even replace the entire sector with a spare sector. This is completely transparent to the host and does not consume any user data space.

The CompactFlash Memory Card soft error rate specification is much better than the magnetic disk drive specification. In the extremely rare case a read error does occur, CompactFlash Memory Cards have innovative algorithms to recover the data. This is similar to using retries on a disk drive but is much more sophisticated. The last line of defense is to employ a powerful ECC to correct the data. If ECC is used to recover data, defective bits are replaced with spare bits to ensure they do not cause any future problems.

These defect and error management systems coupled with the solid state construction give CompactFlash Memory Cards unparalleled reliability.

CompactFlash Memory Card Product Manual

1.8.3 Endurance

CompactFlash Memory Cards have an endurance specification for each sector of 300,000 writes (reading a logical sector is unlimited). This is far beyond what is needed in nearly all applications of CompactFlash Memory Cards. Even very heavy use of CompactFlash Card in digital cameras, cellular phones, PDAs, personal communicators, pagers, voice recorders, ruggedized handheld computers, palmtop and notebook computers will use only a fraction of the total endurance over the typical computer’s five year lifetime. For instance, it would take over 34 years to wear out an area on the CompactFlash Card on which a file of any size (from 512 bytes to capacity) was rewritten 3 times per hour, 8 hours a day, 365 days per year.

With typical applications (PIM software, word processing, spreadsheets, etc.), the endurance limit is not of any practical concern to the vast majority of users.

would use the Erase Sectors command to pre-erase the sectors that will store the pictures. When the pictures are taken, the camera can store them in the previously erased sectors much faster than in non-erased sectors.

1.8.5.1 Interaction with Systems not Aware of the Erase Sector and Write without Erase Commands

Many systems that can read and write CompactFlash Memory Cards may not be aware of the Erase Sector and Write without Erase Commands. These systems would not issue these commands but such a system might attempt a normal write or a normal read to a pre-erased sector.

A normal write to a pre-erased sector will function correctly, but will be at the normal write speed that is slower than a Write without Erase command.

1.8.4 Wear Leveling

CompactFlash Memory Card Series products do not require or perform a Wear Level operation. The command is supported as a NOP operation to maintain backward compatibility with existing software utilities.

1.8.5 Using the Erase Sector and Write without Erase Commands

The Erase Sector and Write without Erase commands provide the capability to substantially increase the write performance of the CompactFlash Memory Card. Once a sector has been erased using the Erase Sector command, a write to that sector will be much faster. This is because a normal write operation includes a separate sector erase prior to write.

An example of where these commands may be useful is in a digital camera. The camera user may have plenty of time to erase pictures but may wish to take several pictures in rapid succession. To accomplish this, the host system (i.e., camera)

If a normal read is attempted to a “pre-erased” sector, CompactFlash Memory Cards will detect it is pre-erased and will return zero data and will not report an error even though the data ECC is not valid.

If an “un-aware” host system over-writes a preerased sector with a normal write and then the CompactFlash Memory Card is moved to the system that created the erased sectors, a situation exists where a Write without Erase might be attempted to a “normal” sector. If this occurs, the CompactFlash Card will perform a normal write which means it will first erase the sector and then do a full write with all margin modes enabled. This write will of course be slower than if the sector were in fact pre-erased.

1.8.5.2 Limitations and Issues

The advantage of the Write without Erase and Erase Sector commands is that they shift the bulk of the erase and write time to the Erase Sector command. The Erase Sector command performs most of the normal tasks needed. To increase the speed of the Write without Erase command, the final margin verify done in a normal write

CompactFlash Memory Card Product Manual

command is skipped for the first 16K writes. When the cycle count (hot count) of a sector exceeds 16K, the system controller automatically reverts to a full write, including the final margin verify. Since the erase is not required in this case, a write to a pre-erased sector with a hot count of over 16K is still faster than to a sector that has not been pre-erased. The Translate Sector command can be used to determine the “hot count” of a sector.

1.8.6 Automatic Sleep Mode

A unique feature of the SanDisk CompactFlash Memory Card (and other SanDisk products) is automatic entrance and exit from sleep mode. Upon completion of a command, the CompactFlash Card will enter the sleep mode to conserve power if no further commands are received within 5 msec. The host does not have to take any action for this to occur. In most systems, the CompactFlash Memory Card is in sleep mode except when the host is accessing it, thus conserving power. Note that the delay from command completion to entering sleep mode can be adjusted.

When the host is ready to access the CompactFlash Memory Card and it is in sleep mode, any command issued to the CompactFlash Card will cause it to exit sleep and respond. The host does not have to follow the ATA protocol of issuing a reset first. It may do this if desired, but it is not needed. By not issuing the reset, performance is improved through the reduction of overhead but this must be done only for the SanDisk products as other ATA products may not support this feature.

1.8.7 Dynamic Adjustment of Performance versus Power Consumption

A very unique and valuable feature of the CompactFlash Memory Card is the ability of the host to control the power the card consumes. This allows CompactFlash Cards to work across a broad cross section of platforms without compromising performance. For instance, it can operate in a platform that provides only 32 mA at

3.3 volts average current (of course at reduced

performance) or in a platform that provides 90 mA at full performance. Please see the Set Features command for details.

1.8.8 Power Supply Requirements

This is a dual voltage product which means it will operate at a voltage range of 3.30 volts ± 5% or 5.00 volts ± 10% (± 5% for industrial versions). Per the PCMCIA specification section 2.1.1, the host system must apply 0 volts in order to change a voltage range. This same procedure of providing 0 volts to the card is required if the host system applies an input voltage outside the desired voltage by more than 20%. This means less than

4.0 volts for the 5.00 volt range and less than 2.70

volts for the 3.30 volt range.

CompactFlash Memory Card Product Manual

2.0 Product Specifications

For all the following specifications, values are defined at ambient temperature and nominal supply voltage unless otherwise stated.

2.1 System Environmental Specifications

Standard SDCFB-XX

Product

Temperature Operating:

Non-Operating:

Humidity Operating:

Non-Operating: Acoustic Noise: 0 dB 0 dB Vibration Operating:

Non-Operating: Shock Operating:

Non-Operating:

0° C to 60° C

-25° C to 85° C 8% to 95%, non-condensing

8% to 95%, non-condensing

15 G peak to peak max. 15 G peak to peak max.

2,000 G max. 2,000 G max.

2.2 System Power Requirements

SDCFB-XX

(Standard Version)

DC Input Voltage (VCC) 100 mV max. ripple (p-p)

+5 V Currents (maximum Average value) See Notes 1 to 3.

Sleep:

Reading:

Writing:

Read/Write Peak

3.3V ±5% 5V ± 10% 3.3V ±5% 5V ±5%

200 µA (Slow - Fast) 32 mA - 45 mA 32 mA - 60 mA 150 mA/50µs

500 µA (Slow - Fast) 46 mA - 75 mA 46 mA - 90 mA 150 mA/50µs

Industrial SDCFBI-XX

Product

-40° C to 85° C

-50° C to 100° C 8% to 95%, non-condensing

8% to 95%, non-condensing

15 G peak to peak max. 15 G peak to peak max.

2,000 G max. 2,000 G max.

SDCFBI-XX

(Industrial Version)

200 µA (Slow - Fast) 32 mA - 45 mA 32 mA - 60 mA 150 mA/50µs

500 µA (Slow - Fast) 46 mA - 75 mA 46 mA - 90 mA 150 mA/50µs

“Not Busy“ operating state.

Note 3. The currents specified show the bounds of programmability of the product.

CompactFlash Memory Card Product Manual

2.3 System Performance

All performance timings assume the CompactFlash Memory Card Series controller is in the default (i.e., fastest) mode.

Start Up Times Sleep to write:

Sleep to read:

Reset to ready:

Active to Sleep Delay Programmable

Data Transfer Rate

To/From Flash

Data Transfer Rate

To/From Host

Controller Overhead Command to DRQ 1.25 msec maximum

Note: The Sleep to Write and Sleep to Read times are the times it takes the CompactFlash Memory Card to exit

sleep mode when any command is issued by the host to when the card is reading or writing. CompactFlash Memory Cards do not require a reset to exit sleep mode. See section 1.8.6.

2.5 msec maximum

2.0 msec maximum 50 msec typical 400 msec maximum

4.0 MBytes/sec burst

6.0 MBytes/sec burst

2.4 System Reliability and Maintenance

MTBF (@ 25°C) >1,000,000 hours Preventive Maintenance None Data Reliability

Endurance SDCFB-XX 300,000 erase / program cycles per logical sector

Endurance SDCFBI-XX Industrial Product 100,000 erase / program cycles per logical sector

<1 non-recoverable error in 1014 bits read

guaranteed

2.5 Physical Specifications

Refer to the following table and to Figure 2-1 for CompactFlash Memory Card physical specifications and dimensions.

Model SDCFB-XX Weight: 11.4 g (.40 oz) typical

All Models 14.2 g (.5 oz) maximum

Length: 36.40 ± 0.15 mm (1.433 ±.006 in)

Width: 42.80 ± 0.10 mm (1.685 ±.004 in)

Thickness:

Excluding Lip

3.3 mm ± 0.10 mm (.130 ±.004 in)

CompactFlash Memory Card Product Manual

Figure 2-1 CompactFlash Memory Card Dimensions

Refer to the following table and to Figure 2-2 for CompactFlash Memory Card PC Card Adapter physical specifications and dimensions.

Model SDCF-03 Weight: 33 g (1.16 oz) typical

Length: 85.6 ± 0.20 mm (3.370 ±.008 in)

Width: 54.0 ± 0.10 mm (2.126 ±.004 in)

Thickness: 5.0 mm Max (0.1968 in)

CompactFlash Memory Card Product Manual

Figure 2-2 CompactFlash Memory Card Adapter Dimensions

CompactFlash Memory Card Product Manual

2.6 Capacity Specifications

The table below shows the specific capacity for the various models and the default number of heads, sectors/track and cylinders.

Model Number Capacity

(formatted)

SDCFB-2 2,015,232 bytes 3,936 2 16 123 SDCFB-4 4,030,464 bytes 7,872 2 32 123 SDCFB-6 6,029,312 bytes 11,776 2 32 184

SDCFB-8 8,028,160 bytes 15,680 2 32 245 SDCFB-10 10,485,760 bytes 20,480 2 32 320 SDCFB-15 15,007,744 bytes 29,312 2 32 458 SDCFB-20 20,054,016 bytes 39,168 2 32 612 SDCFB-24 24,051,712 bytes 46,976 2 32 734 SDCFB-30 30,081,024 bytes 58,752 6 32 306 SDCFB-40 40,108,032 bytes 78,336 4 32 612 SDCFB-48 48,103,424 bytes 93,952 4 32 734

Sectors/Card

(Max LBA+1)

No. of

Heads

No. of

Sectors/

Track

No. of

Cylinders

CompactFlash Memory Card Product Manual

3.0 Installation

3.1 Mounting

The CompactFlash Memory Card may be installed in any platform with a 3M 50 position Surface Mount Interface Header (3M P/N N7E507516VY-20) and Ejector (3M P/N D7E50-7316-02), or equivalent, properly installed. Refer to the appendix at the end of this manual for additional technical information.

In addition, the CompactFlash Memory Card may be used in any standard PCMCIA Type II (5 mm) or Type III (10.5 mm) socket as supplied by an OEM using the optional SanDisk PCMCIA Adapter SDCF-03.

CompactFlash Memory Card Product Manual

4.0 CompactFlash Memory Card Interface Description

4.1 Physical Description

The host is connected to the CompactFlash Memory Card using a standard 50 pin connector consisting of two rows of 25 female contacts each on 50 mil (1.27 mm) centers.

4.1.1 Pin Assignments and Pin Type

The signal/pin assignments are listed in Table 4-1. Low active signals have a “-” prefix. Pin types are Input, Output or Input/Output. Table 4-2 defines the DC characteristics for all input and output type structures.

4.2 Electrical Description

The CompactFlash Memory Card Series is optimized for operation with hosts which support the PCMCIA I/O interface standard conforming to the PC Card ATA specification. However, the CompactFlash Card may also be configured to operate in systems that support only the memory interface standard. The configuration of the CompactFlash Card will be controlled using the standard PCMCIA configuration registers starting at address 200h in the Attribute Memory space of the CompactFlash Memory Card.

Table 4-2 describes the I/O signals. Signals whose source is the host are designated as inputs while signals that the CompactFlash Memory Card sources are outputs. The CompactFlash Card logic levels conform to those specified in the PCMCIA Release 2.1 specification. Refer to section 4.3 for definitions of Input and Output type.

CompactFlash Memory Card Product Manual

Table 4-1 Pin Assignments and Pin Type

PC Card Memory Mode PC Card I/O Mode True IDE Mode

Num

Signal

Name

Type

In, Out

Type

Num

Signal

Name

Type 1 GND Ground 1 GND Ground 1 GND Ground 2 D03 I/O I1Z,OZ3 2 D03 I/O I1Z,OZ3 2 D03 I/O I1Z,OZ3 3 D04 I/O I1Z,OZ3 3 D04 I/O I1Z,OZ3 3 D04 I/O I1Z,OZ3 4 D05 I/O I1Z,OZ3 4 D05 I/O I1Z,OZ3 4 D05 I/O I1Z,OZ3 5 D06 I/O I1Z,OZ3 5 D06 I/O I1Z,OZ3 5 D06 I/O I1Z,OZ3 6 D07 I/O I1Z,OZ3 6 D07 I/O I1Z,OZ3 6 D07 I/O I1Z,OZ3 7 -CE1 I I3U 7 -CE1 I I3U 7 -CS0 I I3Z 8 A10 I I1Z 8 A10 I I1Z 8 A10 9 -OE I I3U 9 -OE I I3U 9 -ATA SEL I I3U

10 A09 I I1Z 10 A09 I I1Z 10 A09 11 A08 I I1Z 11 A08 I I1Z 11 A08 12 A07 I I1Z 12 A07 I I1Z 12 A07 13 VCC Power 13 VCC Power 13 VCC Power 14 A06 I I1Z 14 A06 I I1Z 14 A06 15 A05 I I1Z 15 A05 I I1Z 15 A05 16 A04 I I1Z 16 A04 I I1Z 16 A04 17 A03 I I1Z 17 A03 I I1Z 17 A03 18 A02 I I1Z 18 A02 I I1Z 18 A02 I I1Z 19 A01 I I1Z 19 A01 I I1Z 19 A01 I I1Z 20 A00 I I1Z 20 A00 I I1Z 20 A00 I I1Z 21 D00 I/O I1Z,OZ3 21 D00 I/O I1Z,OZ3 21 D00 I/O I1Z,OZ3 22 D01 I/O I1Z,OZ3 22 D01 I/O I1Z,OZ3 22 D01 I/O I1Z,OZ3 23 D02 I/O I1Z,OZ3 23 D02 I/O I1Z,OZ3 23 D02 I/O I1Z,OZ3 24 WP O OT3 24 -IOIS16 O OT3 24 -IOCS16 O ON3 25 -CD2 O Ground 25 -CD2 O Ground 25 -CD2 O Ground 26 -CD1 O Ground 26 -CD1 O Ground 26 -CD1 O Ground 27 D11 28 D12 29 D13 30 D14 31 D15 32 -CE2

I/O I1Z,OZ3 27 D11

I/O I1Z,OZ3 28 D12

I/O I1Z,OZ3 29 D13

I/O I1Z,OZ3 30 D14

I/O I1Z,OZ3 31 D15

I I3U 32 -CE2

I/O I1Z,OZ3 27 D11

I/O I1Z,OZ3 28 D12

I/O I1Z,OZ3 29 D13

I/O I1Z,OZ3 30 D14

I/O I1Z,OZ3 31 D15

I I3U 32 -CS1 33 -VS1 O Ground 33 -VS1 O Ground 33 -VS1 O Ground 34 -IORD I I3U 34 -IORD I I3U 34 -IORD I I3Z

In, Out

Type

Num

Signal

Name

Type

In, Out

Type

I I1Z

I I1Z I I1Z I I1Z

I I1Z I I1Z I I1Z I I1Z

I/O I1Z,OZ3 I/O I1Z,OZ3 I/O I1Z,OZ3 I/O I1Z,OZ3 I/O I1Z,OZ3

I I3Z

CompactFlash Memory Card Product Manual

Table 4-1 Pin Assignments and Pin Type (continued)

PC Card Memory Mode PC Card I/O Mode True IDE Mode

Num

Signal

Name

Type

In, Out

Type

Num

Signal

Name

Type 35 -IOWR I I3U 35 -IOWR I I3U 35 -IOWR I 36 -WE I I3U 36 -WE I I3U 36 -WE 37 RDY/BSY O OT1 37 IREQ O OT1 37 INTRQ O OZ1 38 VCC Power 38 VCC Power 38 VCC Power 39 -CSEL I I2Z 39 -CSEL I I2Z 39 -CSEL I I2U 40 -VS2 O OPEN 40 -VS2 O OPEN 40 -VS2 O OPEN 41 RESET I I2Z 41 RESET I I2Z 41 -RESET I I2Z 42 -WAIT O OT1 42 -WAIT O OT1 42 IORDY O ON1 43 -INPACK O OT1 43 -INPACK O OT1 43 -INPACK O OZ1 44 -REG I I3U 44 -REG I I3U 44 -REG 45 BVD2 I/O I1U,OT1 45 -SPKR I/O I1U,OT1 45 -DASP I/O I1U,ON1 46 BVD1 I/O I1U,OT1 46 -STSCHG I/O I1U,OT1 46 -PDIAG I/O I1U,ON1 47 D08 48 D09 49 D10

I/O I1Z,OZ3 47 D08 I/O I1Z,OZ3 48 D09 I/O I1Z,OZ3 49 D10

50 GND Ground 50 GND Ground 50 GND Ground

In, Out

Type

Num

Signal

Name

In, Out

Type

I I3U

I/O I1Z,OZ3 I/O I1Z,OZ3 I/O I1Z,OZ3

Type

I3Z

Note: 1. These signals are required only for 16 bit access and not required when installed in 8-bit systems.

For lowest power dissipation, leave these signals open.

2. Should be grounded by the host.

3. Should be tied to VCC by the host.

4. Please refer to section 4.3 for definitions of In, Out type.

CompactFlash Memory Card Product Manual

Table 4-2 Signal Description

Signal Name Dir. Pin Description

A10 - A0 (PC Card Memory Mode)

A10 - A0 (PC Card I/O Mode)

A2 - A0 (True IDE Mode)

A10 - A3 (True IDE Mode)

BVD1 (PC Card Memory Mode)

-STSCHG (PC Card I/O Mode) Status Changed

-PDIAG (True IDE Mode)

I 8, 10, 11, 12,

14, 15, 16, 17,

18, 19, 20

I 18, 19, 20 In True IDE Mode only A[2:0] are used to select the one of eight

I/O 46 This signal is asserted high as the BVD1 signal since a battery

These address lines along with the -REG signal are used to select the following: The I/O port address registers within the CompactFlash Card, the memory mapped port address registers within the card, a byte in the card's information structure and its configuration control and status registers.

This signal is the same as the PC Card Memory Mode signal.

registers in the Task File. In True IDE Mode, these remaining address lines should be

grounded by the host.

is not used with this product. This signal is asserted low to alert the host to changes in the

RDY/-BSY and Write Protect states, while the I/O interface is configured. Its use is controlled by the Card Config and Status Register.

In the True IDE Mode, this input / output is the Pass Diagnostic signal in the Master / Slave handshake protocol.

BVD2 (PC Card Memory Mode)

-SPKR (PC Card I/O Mode)

-DASP (True IDE Mode)

-CD1, -CD2 (PC Card Memory Mode)

-CD1, -CD2 (PC Card I/O Mode)

-CD1, -CD2 (True IDE Mode)

-CE1, -CE2 (PC Card Memory Mode) Card Enable

-CE1, -CE2 (PC Card I/O Mode) Card Enable

-CS0, -CS1 (True IDE Mode)

I/O 45 This output line is always driven to a high state in Memory Mode

since a battery is not required for this product. This output line is always driven to a high state in I/O Mode

since this product does not support the audio function. In the True IDE Mode, this input/output is the Disk Active/Slave

Present signal in the Master/Slave handshake protocol.

O 26, 25 These Card Detect pins are connected to ground on the

CompactFlash Card. They are used by the host to determine if the card is fully inserted into its socket.

This signal is the same for all modes.

I 7, 32 These input signals are used both to select the card and to

indicate to the card whether a byte or a word operation is being performed. -CE2 always accesses the odd byte of the word.

-CE1 accesses the even byte or the Odd byte of the word depending on A0 and -CE2. A multi-plexing scheme based on A0, -CE1, -CE2 allows 8 bit hosts to access all data on D0-D7. See Tables 4-11, 4-12, 4-15, and 4-16.

This signal is the same as the PC Card Memory Mode signal.

In the True IDE Mode -CS0 is the chip select for the task file registers while -CS1 is used to select the Alternate Status Register and the Device Control Register.

CompactFlash Memory Card Product Manual

Table 4-2 Signal Description (continued)

Signal Name Dir. Pin Description

-CSEL (PC Card Memory Mode)

-CSEL (PC Card I/O Mode)

-CSEL (True IDE Mode)

I 39 This signal is not used for this mode.

This signal is not used for this mode.

This internally pulled up signal is used to configure this device as a Master or a Slave when configured in the True IDE Mode. When this pin is grounded, this device is configured as a Master. When the pin is open, this device is configured as a Slave.

D15 - D00 (PC Card Memory Mode)

D15 - D00 (PC Card I/O Mode)

D15 - D00 (True IDE Mode)

GND (PC Card Memory Mode)

GND (PC Card I/O Mode)

GND (True IDE Mode)

-INPACK ( PC Card Memory Mode)

-INPACK ( PC Card I/O Mode) Input Acknowledge

-INPACK (True IDE Mode)

I/O 31, 30, 29, 28,

27, 49, 48, 47,

6, 5, 4, 3, 2,

23, 22, 21

-- 1, 50 Ground.

O 43 This signal is not used in this mode.

These lines carry the Data, Commands and Status information between the host and the controller. D00 is the LSB of the Even Byte of the Word. D08 is the LSB of the Odd Byte of the Word.

This signal is the same as the PC Card Memory Mode signal.

In True IDE Mode, all Task File operations occur in byte mode on the low order bus D00-D07 while all data transfers are 16 bit using D00-D15.

This signal is the same for all modes.

The Input Acknowledge signal is asserted by the CompactFlash Card when the card is selected and responding to an I/O read cycle at the address that is on the address bus. This signal is used by the host to control the enable of any input data buffers between the card and the CPU.

In True IDE Mode this output signal is not used and should not be connected at the host.

-IORD (PC Card Memory Mode)

-IORD (PC Card I/O Mode)

-IORD (True IDE Mode)

I 34 This signal is not used in this mode.

This is an I/O Read strobe generated by the host. This signal gates I/O data onto the bus from the CompactFlash Card when the card is configured to use the I/O interface.

In True IDE Mode, this signal has the same function as in PC Card I/O Mode.

CompactFlash Memory Card Product Manual

Table 4-2 Signal Description (continued)

Signal Name Dir. Pin Description

-IOWR (PC Card Memory Mode)

-IOWR (PC Card I/O Mode)

-IOWR (True IDE Mode)

-OE (PC Card Memory Mode)

-OE (PC Card I/O Mode)

-ATA SEL (True IDE Mode)

RDY/-BSY (PC Card Memory Mode)

-IREQ ( PC Card I/O Mode)

INTRQ (True IDE Mode)

-REG (PC Card Memory Mode) Attribute Memory Select

-REG (PC Card I/O Mode)

-REG (True IDE Mode)

I 35 This signal is not used in this mode.

The I/O Write strobe pulse is used to clock I/O data on the Card Data bus into the CompactFlash controller registers when the card is configured to use the I/O interface.

The clocking will occur on the negative to positive edge of the signal (trailing edge).

In True IDE Mode, this signal has the same function as in PC Card I/O Mode.

I 9 This is an Output Enable strobe generated by the host interface.

It is used to read data from the CompactFlash Card in Memory Mode and to read the CIS and configuration registers.

In PC Card I/O Mode, this signal is used to read the CIS and configuration registers.

To enable True IDE Mode this input should be grounded by the host.

O 37 In Memory Mode this signal is set high when the CompactFlash

Card is ready to accept a new data transfer operation and held low when the card is busy. The Host memory card socket must provide a pull-up resistor.

At power up and at Reset, the RDY/-BSY signal is held low (busy) until the CompactFlash Card has completed its power up or reset function. No access of any type should be made to the CompactFlash Card during this time. The RDY/-BSY signal is held high (disabled from being busy) whenever the following condition is true: The CompactFlash Card has been powered up with +RESET continuously disconnected or asserted.

I/O Operation - After the CompactFlash Card has been configured for I/O operation, this signal is used as -Interrupt Request. This line is strobed low to generate a pulse mode interrupt or held low for a level mode interrupt.

In True IDE Mode signal is the active high Interrupt Request to the host.

I 44 This signal is used during Memory Cycles to distinguish between

Common Memory and Register (Attribute) Memory accesses. High for Common Memory, Low for Attribute Memory.

The signal must also be active (low) during I/O Cycles when the I/O address is on the Bus.

In True IDE Mode this input signal is not used and should be connected to VCC by the host.

CompactFlash Memory Card Product Manual

Table 4-2 Signal Description (continued)

Signal Name Dir. Pin Description

RESET (PC Card Memory Mode)

RESET (PC Card I/O Mode)

-RESET (True IDE Mode)

VCC (PC Card Memory Mode)

VCC (PC Card I/O Mode)

VCC (True IDE Mode)

-VS1

-VS2 (PC Card Memory Mode)

-VS1

-VS2 (PC Card I/O Mode)

-VS1

-VS2 (True IDE Mode)

-WAIT (PC Card Memory Mode)

-WAIT (PC Card I/O Mode)

IORDY (True IDE Mode)

-WE (PC Card Memory Mode)

-WE (PC Card I/O Mode)

-WE (True IDE Mode)

WP (PC Card Memory Mode) Write Protect

-IOIS16 ( PC Card I/O Mode)

-IOCS16 (True IDE Mode)

I 41 When the pin is high, this signal resets the CompactFlash Card.

-- 13, 38 +5 V, +3.3 V power.

O 33

O 42 The -WAIT signal is driven low by the CompactFlash Card to

I 36 This is a signal driven by the host and used for strobing memory

O 24 Memory Mode - The CompactFlash Card does not have a write

The card is Reset only at power up if this pin is left high or open from power-up. The card is also reset when the Soft Reset bit in the Card Configuration Option Register is set.

This signal is the same as the PC Card Memory Mode signal.

In the True IDE Mode this input pin is the active low hardware reset from the host.

This signal is the same for all modes.

Voltage Sense Signals. -VS1 is grounded so that the CompactFlash Card CIS can be read at 3.3 volts and -VS2 is open and reserved by PCMCIA for a secondary voltage.

This signal is the same for all modes.

signal the host to delay completion of a memory or I/O cycle that is in progress.

This signal is the same as the PC Card Memory Mode signal.

In True IDE Mode this output signal may be used as IORDY.

write data to the registers of the CompactFlash Card when the card is configured in the memory interface mode. It is also used for writing the configuration registers.

In PC Card I/O Mode, this signal is used for writing the configuration registers.

In True IDE Mode this input signal is not used and should be connected to VCC by the host.

protect switch. This signal is held low after the completion of the reset initialization sequence.

I/O Operation - When the CompactFlash Card is configured for I/O Operation, Pin 24 is used for the -I/O Selected is 16 Bit Port (-IOIS16) function. A Low signal indicates that a 16 bit or odd byte only operation can be performed at the addressed port.

In True IDE Mode this output signal is asserted low when this device is expecting a word data transfer cycle.

CompactFlash Memory Card Product Manual

4.3 Electrical Specification

The following table defines all D.C.

Absolute Maximum conditions are: Characteristics for the CompactFlash Memory Card Series.

Vcc = -0.3V min. to 7.0V max. V* = -0.5V min. to Vcc + 0.5V max.

Unless otherwise stated, conditions are:

SDCFB-XX SDCFBI-XX

* Voltage on any pin except Vcc with respect

to GND.

Vcc = 5V ±10% Vcc = 5V ± 5% Vcc = 3.3V ± 5% Vcc = 3.3V ± 5% Ta = 0°C to 60°C Ta = -40°C to 85°C

4.3.1 Input Leakage Current

Note: In the table below, x refers to the characteristics described in section 4.3.2. For example, I1U indicates a

pull up resistor with a type 1 input characteristic.

Type Parameter Symbol Conditions MIN TYP MAX Units

IxZ Input Leakage Current IL Vih = Vcc / Vil = Gnd -1 1 µA IxU Pull Up Resistor RPU1 Vcc = 5.0V 50k 500k Ohm IxD Pull Down Resistor RPD1 Vcc = 5.0V 50k 500k Ohm

Note: The minimum pullup resistor leakage current meets the PCMCIA specification of 10k ohms but is

intentionally higher in the CompactFlash Memory Card Series product to reduce power use.

4.3.2 Input Characteristics

Type Parameter Symbol MIN TYP MAX MIN TYP MAX Units

VCC = 3.3 V VCC = 5.0 V

1 Input Voltage

CMOS

2 Input Voltage

CMOS

3 Input Voltage

CMOS

Schmitt Trigger

Vih

Vil

Vih

Vil

Vth

Vtl

2.4

1.5

1.8

1.0

0.6

2.4

0.8

2.0

0.8

2.8

2.0

Volts

CompactFlash Memory Card Product Manual

4.3.3 Output Drive Type

Note: In the table below, x refers to the characteristics described in section 4.3.4. For example, OT3 refers to

Totempole output with a type 3 output drive characteristic.

Type Output Type Valid Conditions

OTx Totempole Ioh & Iol OZx Tri-State N-P Channel Ioh & Iol OPx P-Channel Only Ioh Only ONx N-Channel Only Iol Only

4.3.4 Output Drive Characteristics

Type Parameter Symbol Conditions MIN TYP MAX Units

1 Output Voltage Voh

Vol

2 Output Voltage Voh

Vol

3 Output Voltage Voh

Vol

X Tri-State

Leakage Current

Ioz Vol = Gnd

Ioh = -4 mA

Iol = 4 mA

Ioh = -8 mA

Iol = 8 mA

Ioh = -8 mA

Iol = 8 mA

Voh = Vcc

Vcc

-0.8V Gnd

+0.4V

Vcc

-0.8V Gnd

+0.4V

Vcc

-0.8V Gnd

+0.4V

-10 10 µA

Volts

CompactFlash Memory Card Product Manual

4.3.5 Interface/Bus Timing

4.3.6 Attribute Memory Read Timing Specification

There are two types of bus cycles and timing sequences that occur in the PCMCIA type interface, a direct mapped I/O transfer and a memory access. The two timing sequences are

The Attribute Memory access time is defined as 300 ns. Detailed timing specifications are shown

in Table 4-3. explained in detail in the PCMCIA PC Card Standard Release 2.1. The CompactFlash Memory Card conforms to the timing in that reference document.

Table 4-3 Attribute Memory Read Timing

Speed Version 300 ns

Item Symbol IEEE Symbol Min ns. Max ns.

Read Cycle Time tc(R) tAVAV 300 Address Access Time ta(A) tAVQV 300 Card Enable Access Time ta(CE) tELQV 300 Output Enable Access Time ta(OE) tGLQV 150 Output Disable Time from CE tdis(CE) tEHQZ 100 Output Disable Time from OE tdis(OE) tGHQZ 100 Address Setup Time tsu (A) tAVWL 30 Output Enable Time from CE ten(CE) tELQNZ 5 Output Enable Time from OE ten(OE) tGLQNZ 5 Data Valid from Address Change tv(A) tAXQX 0

tc(R)

-REG

ta(A)

tsu(A)

ta(CE)

tv(A)

-CE

ten(CE)

ta(OE)

tdis(CE)

-OE

ten(OE)

tdis(OE)

Dout

Figure 4-1 Attribute Memory Read Timing Diagram

Notes: All times are in nanoseconds. Dout signifies data provided by the CompactFlash Memory Card to the

system. The -CE signal or both the -OE signal and the -WE signal must be de-asserted between consecutive cycle operations.

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SanDisk CompactFlash Product Manual

Specifications and Main Features

Frequently Asked Questions

User Manual