Samsung ssh70n10a Datasheet

Advanced Power MOSFET

SSH70N10A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area

Ο

C

175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower R

: 0.018 (Typ.)

DS(ON)

Ω

µ

Absolute Maximum Ratings

Symbol

V

DSS

I

D

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

P

D

T

, T

J

STG

T

L

Drain-to-Source Voltage Continuous Drain Current (TC=25 ) Continuous Drain Current (T

Continuous Drain Current (TC=100 ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt

Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

Characteristic Value UnitsSymbol

Ο

C

Ο

C

Ο

C

BVBV R

DSS

DS(on)

= 100 V

= 0.023

Ω

ID = 70 A

TO-3P

1

2

3

1.Gate 2. Drain 3. Source

100

70

49.2

1

O

2

O

1

O

1

O

3O3

280

+

_

20

1633

70 30

6.5

300

2.0

- 55 to +175

300

V A A

V

mJ

A

mJ

V/ns

W

W/

Ο

C

Ο

C

Thermal Resistance

R

JC

θ

R

CS

θ

R

θ

JA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.24

--

0.5

--

40

Ο

C

/W

SSH70N10A

N-CHANNEL

POWER MOSFET

Electrical Characteristics (T

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

BV BV/ TJ

∆ ∆

V

R

DSS

GS(th)

I

GSS

I

DSS

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

gs

Q

gd

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge

g

Gate-Source Charge Gate-Drain(“miller”) Charge

Ο

=25 unless otherwise specified)

C

VGS=0V,ID=250 A

100

--

2.0

--

0.12

--

-100

--

4.0

100

10

100

V

Ο

ID=250 A See Fig 7

V/

C

VDS=5V,ID=250 A

V

VGS=20V

nA

VGS=-20V VDS=100V

µ

A

VDS=80V,TC=150

Ω

--

0.023

--

53.51

--

3750

--

850 375

22 24

112

84

151

31 66

--

4870

980 430

60

60 240 180 195

--

VGS=10V,ID=35A

Ω

VDS=40V,ID=35A VGS=0V,VDS=25V,f =1MHz

pF

See Fig 5

VDD=50V,ID=70A, RG=5.3

ns

See Fig 13

VDS=80V,VGS=10V,

nC

ID=70A

See Fig 6 & Fig 12

µ

Ο

C

4

O

4

O

Ω

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=0.5mH, IAS=70A, VDD=25V, RG=27 , Starting TJ =25

O

3

ISD 70A, di/dt 530A/ s, VDD BV

O

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

_

µ

_

<

_

<

DSS

µ

1

O

4

O

Ω

, Starting TJ =25

_

<

--

70

--

280

--

1.6

--

143

--

0.72

o

C

o

C

--

Integral reverse pn-diode

A

in the MOSFET

V

ns

µ

C

Ο

C

TJ=25 ,IS=70A,VGS=0V

Ο

C

TJ=25 ,IF=70A diF/dt=100A/ s

µ

O

4

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V 1 0 V

2

10

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

SSH70N10A

2

10

175 oC

1

10

, Drain Current [A]

D

I

0

10

-1

10

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

VDS , Drain-Source Voltage [V]

0.03

VGS = 10 V

]

0.02

Ω

, [

DS(on)

R

0.01

VGS = 20 V

Drain-Source On-Resistance

0.00 0 50 100 150 200 250 300

ID , Drain Current [A]

8000

6000

C

iss

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

@ Note : TJ = 25 oC

1

10

25 oC

, Drain Current [A]

D

I

0

10

2 4 6 8 10

- 55 oC

@ Notes :

1. VGS = 0 V

2. VDS = 40 V

3. 250 µs Pulse Test

VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

2

10

1

10

, Reverse Drain Current [A]

175 oC

DR

I

25 oC

0

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

@ Notes :

1. VGS = 0 V

2. 250 µs Pulse Test

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

10

VDS = 20 V

VDS = 50 V

VDS = 80 V

4000

Capacitance [pF]

2000

C

oss

C

rss

0

10

VDS , Drain-Source Voltage [V]

@ Notes :

1. VGS = 0 V

2. f = 1 MHz

1

10

5

, Gate-Source Voltage [V]

GS

V

0

0 20 40 60 80 100 120 140 160

@ Notes : ID =70.0 A

QG , Total Gate Charge [nC]

SSH70N10A

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2

1.1

3.0

2.5

2.0

POWER MOSFET

N-CHANNEL

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175 200

@ Notes :

1. VGS = 0 V

2. ID = 250 µA

TJ , Junction Temperature [oC]

3

10

2

10

1

10

, Drain Current [A]

D

I

0

10

-1

10

0

10

Operation in This Area is Limited by R

DS(on)

@ Notes :

1. TC = 25 oC

2. TJ = 175 oC

3. Single Pulse

1

10

1 ms

10 ms

DC

VDS , Drain-Source Voltage [V]

100 µs

1.5

, (Normalized)

1.0

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

@ Notes :

1. VGS = 10 V

2. ID = 35.0 A

TJ , Junction Temperature [oC]

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

80

10 µs

2

10

60

40

, Drain Current [A]

D

20

I

0

25 50 75 100 125 150 175

Tc , Case Temperature [oC]

0

10

D=0.5

0.2

-1

10

0.1

0.05

0.02

0.01

-2

(t) , Thermal Response

10

JC

θ

Z

-5

10

single pulse

-4

10

t1 , Square Wave Pulse Duration [sec]

Fig 11. Thermal Response

@ Notes :

1. Z

2. Duty Factor, D=t1/t

3. TJM-TC=PDM*Z

P

DM

-3

10

-2

10

(t)=0.5 oC/W Max.

JC

θ

t

1

t

2

-1

10

2

(t)

JC

θ

0

1

10

N-CHANNEL

POWER MOSFET

SSH70N10A

Fig 12. Gate Charge Test Circuit & Waveform

10V

“ Current Regulator ”

200nF12V

3mA

Current Sampling (IG)

V

in

R

G

50K

out

Ω

V

GS

Resistor

V

Same Type

GS

as DUT

300nF

V

10V

DS

Q

gs

DUT

R

1

Fig 13. Resistive Switching Test Circuit & Waveforms

DUT

R

2

Current Sampling (ID)

Resistor

R

L

V

DD

( 0.5 rated V

V

out

90%

)

DS

10%

V

in

t

d(on)tr

Q

g

Q

gd

Charge

t

d(off)

t

on

f

t

off

Vary tp to obtain required peak I

10V

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV

L

DUT

L

BV

I

D

C

V

DD

DSS

I

AS

V

DD

V

DS

D

R

G

t

p

E

= LL I

AS

1

---2

AS

ID (t)

t

2

p

DSS

-------------------BV

-- V

DSS

DD

Time

V

(t)

DS

SSH70N10A

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

N-CHANNEL

POWER MOSFET

V

GS

( Driver )

DUT

+

V

DS

--

I

S

V

GS

Driver

R

G

D =

Same Type

as DUT

• dv/dt controlled by “RG”

• IS controlled by Duty Factor “D”

Gate Pulse Width

-------------------------Gate Pulse Period

L

V

DD

10V

I

S

( DUT )

V

DS

( DUT )

IFM , Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

f

Body Diode

Forward Voltage Drop

di/dt

V

DD