Page 1
Advanced Power MOSFET
SSH4N90AS
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ VDS = 900V
Low R
: 3.054 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
T
V
DSS
I
D
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
GS
AS
AR
D
STG
L
BV
R
DSS
DS(on)
= 900 V
= 3.7 Ω
ID = 4.5 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
900
4.5
2.8
1
O
2
O
1
O
1
O
3
O
+
_
536
18
30
4.5
14
1.5
140
1.12
- 55 to +150
300
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
Ο
C
Thermal Resistance
R
θ
JC
R
θ
CS
R
θ
JA
Characteristic Max. UnitsSymbol Typ.
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
--
0.24
--
0.89
--
40
Ο
C /W
Page 2
SSH4N90AS
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
BV
∆BV/∆TJ
V
R
DSS
GS(th)
I
GSS
I
DSS
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
Q
gs
Q
gd
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
g
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
Ο
=25
C unless otherwise specified)
C
900
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
1.04
3.66
18.1
--
--
--
--
--
--
910
85
34
19
31
68
30
42
8.1
--
3.5
100
-100
25
250
3.7
--
1180
100
40
50
70
145
70
55
--
--
VGS=0V,ID=250µA
V
ID=250µA See Fig 7
V/ ΟC
VDS=5V,ID=250µA
V
VGS=30V
nA
VGS=-30V
VDS=900V
µA
VDS=720V,TC=125 ΟC
VGS=10V,ID=2.25A
Ω
Ω
VDS=50V,ID=2.25A
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
VDD=450V,ID=4.5A,
RG=13.6 Ω
ns
See Fig 13
VDS=720V,VGS=10V,
nC
ID=4.5A
See Fig 6 & Fig 12
O
O
4
*
O
4
O
4
5
O
4
5
O
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
¨ç Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
¨è L=50mH, IAS=4.5A, VDD=50V, RG=27Ω, Starting TJ =25 ΟC
¨é ISD 4.5A, di/dt 110A/µs, VDD BV
¨ê Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
¨ë Essentially Independent of Operating Temperature
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
_
<
_
<
_
<
DSS
--
1
--
O
4
--
O
--
--
, Starting TJ =25 ΟC
_
<
--
--
--
490
4.24
4.5
18
1.4
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
TJ=25ΟC ,IS=4.5A,VGS=0V
TJ=25ΟC ,IF=4.5A
diF/dt=100A/µs
O
4
Page 3
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
-1
GS
0
10
VDS , Drain-Source Voltage [V]
1
10
0
10
-1
10
, Drain Current [A]
D
I
-2
10
10
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
SSH4N90AS
1
10
10
0
150 oC
, Drain Current [A]
D
I
10
1
10
25 oC
- 55 oC
-1
2 4 6 8 10
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250 µs Pulse Test
VGS , Gate-Source Voltage [V]
16
VGS = 10 V
VGS = 20 V
]
Ω
, [
DS(on)
R
12
8
4
Drain-Source On-Resistance
@ Note : TJ = 25 oC
0
0 4 8 12 16 20
ID , Drain Current [A]
1500
1200
C
900
600
iss
Capacitance [pF]
C
300
oss
C
rss
0
0
10
C
= Cgs+ Cgd ( Cds= shorted )
iss
C
= Cds+ C
oss
gd
C
= C
rss
gd
1
10
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
VDS , Drain-Source Voltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
1
10
0
10
@ Notes :
25 oC
1. VGS = 0 V
2. 250 µs Pulse Test
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2
150 oC
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
10
5
, Gate-Source Voltage [V]
GS
V
0
0 10 20 30 40 50
VDS = 180 V
VDS = 450 V
VDS = 720 V
@ Notes : ID = 4.5 A
QG , Total Gate Charge [nC]
Page 4
SSH4N90AS
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
1.2
1.1
3.0
2.5
2.0
POWER MOSFET
N-CHANNEL
1.0
, (Normalized)
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
TJ , Junction Temperature [oC]
2
10
1
10
0
10
, Drain Current [A]
D
-1
I
10
-2
10
Operation in This Area
is Limited by R
@ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
1
10
DS(on)
100 µs
1 ms
10 ms
DC
2
10
VDS , Drain-Source Voltage [V]
1.5
, (Normalized)
1.0
DS(on)
R
0.5
Drain-Source On-Resistance
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
@ Notes :
1. VGS = 10 V
2. ID = 2.25 A
TJ , Junction Temperature [oC]
Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area
5
10 µs
3
10
4
3
2
, Drain Current [A]
D
I
1
0
25 50 75 100 125 150
Tc , Case Temperature [oC]
0
10
D=0.5
0.2
-1
0.1
10
0.05
0.02
0.01
(t) , Thermal Response
JC
θ
Z
-2
10
-5
10
single pulse
-4
10
t1 , Square Wave Pulse Duration [sec]
Fig 11. Thermal Response
@ Notes :
1. Z
2. Duty Factor, D=t1/t
3. TJM-TC=PDM*Z
P
DM
-3
10
-2
10
-1
10
(t)=0.89 oC/W Max.
JC
θ
JC
θ
t
1
t
2
0
10
(t)
2
1
10
Page 5
N-CHANNEL
POWER MOSFET
SSH4N90AS
Fig 12. Gate Charge Test Circuit & Waveform
10V
* Current Regulator *
50K¥Ø
200nF12V
3mA
Current Sampling (IG)
V
V
in
R
G
V
out
V
Same Type
GS
as DUT
300nF
V
GS
10V
DS
Q
DUT
R
1
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
DUT
R
2
Current Sampling (ID)
Resistor
R
L
V
DD
( 0.5 rated V
V
out
90%
)
DS
10%
V
in
gs
t
d(on)tr
t
Q
g
Q
gd
Charge
t
d(off)
t
f
on
t
off
Vary tp to obtain
required peak I
10V
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BV
L
DUT
L
BV
I
D
C
V
DD
DSS
I
AS
V
DD
V
DS
D
R
G
t
p
E
= LL I
AS
----
1
2
AS
ID (t)
t
2
p
DSS
-------------------BV
-- V
DSS
DD
Time
V
(t)
DS
Page 6
SSH4N90AS
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
N-CHANNEL
POWER MOSFET
V
V
GS
( Driver )
DUT
+
V
DS
--
I
S
V
GS
GS
Driver
R
G
D =
Same Type
as DUT
• dv/dt controlled by “RG•
• IS controlled by Duty Factor “D”
Gate Pulse Width
-------------------------Gate Pulse Period
L
V
DD
10V
I
S
( DUT )
V
DS
( DUT )
IFM , Body Diode Forward Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
Body Diode
Forward Voltage Drop
di/dt
V
DD
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