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SS9015 PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY, LOW NO ISE AMPLIFIER
• Complement to SS9014
ABSOLUTE MAXIMUM RATINGS (TA=25
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipatio n
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
ELECTRICAL CHARACTERISTICS ( T
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
BV
BV
BV
I
I
h
V
V
V
C
f
NF
CBO
EBO
T
ÎÎ)
-50
-45
-5
-100
450
150
-55 ~ 150
=25
ÎÎ)
A
CBO
CEO
EBO
FE
(sat)
CE
(sat)
BE
(on)
BE
OB
V
V
V
mA
mW
Î
Î
= -100À, IE =0
I
C
= -1mA, IB =0
I
C
= -100À, IC =0
I
E
= -50V, IE =0
V
CB
V
= -5V, IC =0
EB
V
= -5V, IC = -1mA
CE
I
= -100mA, IB = -5mA
C
I
= -100mA, IB = -5mA
C
V
= -5V, IC = -2mA
CE
V
= -10V, IE =0
CB
f=1MHz
V
= -5V, IC = -10mA
CE
V
= -5V, IC = -0.2mA
CE
f=1KHz, R
=1
Ï
S
TO-92
1. Emitter 2. Base 3. Collector
-50
-45
-5
200
60
-0.2
-0.82
-0.65
-0.6
100
4.5
190
0.7
-50
-50
600
-0.7
-1.0
-0.75
7.0
V
V
V
nA
nA
V
V
pF
MHz
dB
10
CLASSIFICATIO N
h
FE
Classification A B C
h
FE
60-150 100-300 200-600
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SS9015 PNP EPITAXIAL SILICON TRANSISTOR
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