Page 1
SS9014 NPN EPITAXIAL SILICON TRANSISTOR
PRE-AMPLI F I ER, LOW LEVEL & LOW NOISE
• High total power dissipation. (P
• High h
• Complementary to SS9015
and good linearity
FE
ABSOLUTE MAXIMUM RATINGS (TA=25
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltag e
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS ( T
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
=450mW)
T
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
BV
BV
BV
I
I
h
V
V
V
C
f
NF
CBO
EBO
FE
T
CBO
CEO
EBO
CE
BE
BE
OB
-55 ~ 150
=25
A
(sat)
(sat)
(on)
ÎÎ)
50
45
5
100
450
150
ÎÎ)
V
V
V
mA
mW
Î
Î
=100À, IE =0
I
C
=1mA, IB =0
I
C
=100À, IC =0
I
E
=50V, IE =0
V
CB
V
=5V, IC =0
EB
V
=5V, IC =1mA
CE
I
=100mA, IB =5mA
C
I
=100mA, IB =5mA
C
V
=5V, IC =2mA
CE
V
=10V, IE =0
CB
f=1MHz
V
=5V, IC =10mA
CE
V
=5V, IC =0.2mA
CE
f=1KHz, R
=2
S
TO-92
1. Emitter 2. Base 3. Collector
0.3
1.0
0.7
3.5
V
V
V
nA
50
nA
50
V
V
pF
MHz
dB
10
50
45
5
1000
280
60
0.14
0.84
0.63
0.58
150
Ï
2.2
270
0.9
CLASSIFICATIO N
h
FE
Classification A B C D
h
FE
60-150 100-300 200-600 400-1000
Page 2
SS9014 NPN EPITAXIAL SILICON TRANSISTOR
Loading...