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SS9013 NPN EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLI FIER OF POTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATIO N.
• High total power dissipation. (P
• High Collector Current. (I
• Complementary to SS9012
• Excelent h
linearity.
FE
=500mA)
C
=625mW)
T
ABSOLUTE MAXIMUM RATINGS (TA=25
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltag e
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS ( T
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
=25
A
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat)
CE
(sat)
V
BE
(on)
V
BE
ÎÎ)
40
20
5
500
625
150
-55 ~ 150
ÎÎ)
I
I
I
V
V
V
V
I
I
V
V
V
V
mA
mW
Î
Î
=100À, IE =0
C
=1mA, IB =0
C
=100À, IC =0
E
=25V, IE =0
CB
=3V, IC =0
EB
=1V, IC =50mA
CE
=1V, IC =500mA
CE
=500mA, IB =50mA
C
=500mA, IB =50mA
C
=1V, IC =10mA
CE
TO-92
1. Emitter 2. Base 3. Collector
40
20
5
120
64
120
40
0.16
0.91
0.67
0.6
100
100
202
0.6
1.2
0.7
V
V
V
nA
nA
V
V
V
h
CLASSIFICATIO N
FE
Classification D E F G H
hFE(1) 64-91 78-112 96-135 112-166 144-202
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SS9013 NPN EPITAXIAL SILICON TRANSISTOR
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