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SS9012 PNP EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLI FIER OF POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATIO N.
• High total power dissipation. (P
• High Collector Current. (I
• Complementary to SS9013
• Excelent h
linearity.
FE
ABSOLUTE MAXIMUM RATINGS (TA=25
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipatio n
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS ( T
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Volta ge
T
= -500mA)
C
=625mW)
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
BV
BV
BV
I
I
h
h
V
V
V
CBO
EBO
FE1
FE2
ÎÎ)
-40
-20
-5
-500
625
150
-55 ~ 150
=25
ÎÎ)
A
= -100À, IE =0
I
CBO
CEO
EBO
(sat)
CE
(sat)
BE
(on)
BE
C
= -1mA, IB =0
I
C
= -100À, IC =0
I
E
V
CB
V
EB
V
CE
V
CE
I
= -500mA, IB = -50mA
C
I
= -500mA, IB = -50mA
C
V
CE
V
V
V
mA
mW
Î
Î
= -25V, IE =0
= -3V, IC =0
= -1V, IC = -50mA
= -1V, IC = -500mA
= -1V, IC = -10mA
TO-92
1. Emitter 2. Base 3. Collector
-40
-20
-5
120
64
90
40
-0.18
-0.95
-0.67
-0.6
-100
-100
202
-0.6
-1.2
-0.7
V
V
V
nA
nA
V
V
V
h
CLASSIFICATIO N
FE
Classification D E F G H
hFE(1) 64-91 78-112 96-135 112-166 144-202
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SS9012 PNP EPITAXIAL SILICON TRANSISTOR
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