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SS8050 NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLI FIER OF PORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATIO N.
• Complimentary to SS8550
• Collector Current I
• Collector Dissipation:P
=1.5A
C
=2W (TC=25Î)
C
ABSOLUTE MAXIMUM RATINGS (TA=25
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltag e
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS ( T
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Output Capacitance
Current Gain-Bandwidth Product
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
BV
BV
BV
I
I
h
h
h
V
V
V
C
f
CBO
EBO
FE1
FE2
FE3
T
CBO
CEO
EBO
CE
BE
BE
OB
-65 ~ 150
=25
A
(sat)
(sat)
ÎÎ)
40
25
6
1.5
1
150
ÎÎ)
IC=100À, IE=0
=2mA, IB=0
I
C
=100À, IC=0
I
E
=35V, IE=0
V
CB
V
=6V, IC=0
EB
V
=1V, IC=5mA
CE
V
=1V, IC=100mA
CE
V
=1V, IC=800mA
CE
I
=800mA, IB=80mA
C
=800mA, IB=80mA
I
C
=1V, IC=10mA
V
CE
=10V, IE=0
V
CB
f=1MHz
=10V, IC=50mA
V
CE
TO-92
V
V
V
A
W
Î
Î
0.5
1.2
V
V
V
nA
nA
V
V
1
V
pF
MHz
100
40
25
6
100
100
135
45
85
40
160
110
300
0.28
0.98
0.66
9.0
190
h
(2) CLASSIFI CATION
FE
Classification B C D
hFE(2) 85-160 120-200 160-300
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SS8050 NPN EPITAXIAL SILICON TRANSISTOR
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