Samsung SM-A720F Specification
2. Specification
Equa.
Freq. Range
CH Range
2-1. Radio Frequency & Channel
1) LTE BAND frequency
Equa. Freq. Range CH Range
FUL = FUL_low+0.1(NUL-NOffs-UL)
FDL = FDL_low+0.1(NDL-NOffs-DL)
LB1 : 1920 ~ 1980
LB2 : 1850 ~ 1910
LB3 : 1710 ~ 1785
LB4 : 1710 ~ 1755
LB5 : 824 ~ 849
LB7 : 2500 ~ 2570
LB8 : 880 ~ 915
LB17 : 704 ~ 716
LB20 : 832 ~ 862
LB28 : 703 ~ 748
LB38 : 2570 ~ 2620
LB40 : 2300 ~ 2400
LB41 : 2496 ~ 2690
LB1 : 2110 ~ 2170
LB2 : 1930 ~ 1990
LB3 : 1805 ~ 1880
LB4 : 2110 ~ 2155
LB5 : 869 ~ 894
LB7 : 2620 ~ 2690
LB8 : 925 ~ 960
LB17 : 734 ~ 746
LB20 : 791 ~ 821
LB28 : 758 ~ 803
LB38 : 2570 ~ 2620
LB40 : 2300 ~ 2400
LB41 : 2496 ~ 2690
18000≤N≤18599
18600≤N≤19199
19200≤N≤19949
19950≤N≤20399
20400≤N≤20649
20750≤N≤21449
21450≤N≤21799
23730≤N≤23849
24150≤N≤24449
27210≤N≤27659
37750≤N≤38249
38650≤N≤39649
39650≤N≤41589
0≤N≤599
600≤N≤1199
1200≤N≤1949
1950≤N≤2399
2400≤N≤2649
2750≤N≤3449
3450≤N≤3799
5730≤N≤5849
6150≤N≤6449
9210≤N≤9659
37750≤N≤38249
38650≤N≤39649
39650≤N≤41589
2) WCDMA BAND frequency
Tx = N*0.2
Rx = N*0.2
WB1 : 1920 ~ 1980
WB2 : 1850 ~ 1910
WB4 : 1710 ~ 1755
WB5 : 824 ~ 849
WB8 : 880 ~ 915
WB1 : 2110 ~ 2170
WB2 : 1930 ~ 1990
WB4 : 2110 ~ 2155
WB5 : 869 ~ 894
WB8 : 925 ~ 960
9612≤N≤9888
9262≤N≤9538
1312≤N≤1513
4132≤N≤4233
2712≤N≤2863
10562≤N≤10838
9662≤N≤9938
1537≤N≤1738
4357≤N≤4458
2937≤N≤3088
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2. Specification
Equa.
Freq. Range
CH Range
3) GSM BAND frequency
Tx = 824.2+0.2*(N-128)
Tx = 890+0.2*(N-1024)
Tx = 1710.2+0.2*(N-512)
Tx = 1850.2+0.2*(N-512)
Rx = 869.2+0.2*(N-128)
Rx = 935+0.2*(N-1024)
Rx = 1805.2+0.2*(N-512)
Rx = 1930.2+0.2*(N-512)
GSM850 : 824 ~ 849
GSM900 : 880 ~ 915
DCS : 1710 ~ 1785
PCS : 1850 ~ 1910
GSM850 : 869 ~ 894
GSM900 : 925 ~ 960
DCS : 1805 ~ 1880
PCS : 1930 ~ 1990
128≤N≤251
975≤N≤1023
512≤N≤885
512≤N≤810
128≤N≤251
975≤N≤1023
512≤N≤885
512≤N≤810
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2. Specification
2-2. GSM / WCDMA / LTE General Specification
1) GSM BAND
Freq. Band[MHz]
Uplink/Downlink
ARFCN range
Tx/Rx spacing 45 MHz 45 MHz 95 MHz 80 MHz
Mod. Bit rate/
Bit Period
Time Slot Period/Frame
Period
Modulation GPRS 0.3 GMSK 0.3 GMSK 0.3 GMSK 0.3 GMSK
MS Power GPRS 33 dBm~5 dBm 33 dBm~5 dBm 30 dBm~0 dBm 30 dBm~0 dBm
Power Level
Sensitivity -102 dBm -102 dBm -100 dBm -102 dBm
GPRS
GPRS 5 pcl~19 pcl 5 pcl~19 pcl 0 pcl~15 pcl 0 pcl~15 pcl
GSM 850 GSM 900
824~849
869~894
128~251
270.833 Kbps
3.692 us
576.9 us
4.615 ms
880~915
925~960
0~124
& 975~1023
270.833 Kbps
3.692 us
576.9 us
4.615 ms
DCS1800 PCS1900
1710~1785
1805~1880
512~885 512~810
270.833 Kbps
3.692 us
576.9 us
4.615 ms
1850~1910
1930~1990
270.833 Kbps
3.692 us
576.9 us
4.615 ms
TDMA Mux 8 8 8 8
Cell Radius 3 Km 3 Km 2 Km 2 Km
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2. Specification
Time Slot
Period
Max:23.0dBm
Min:<-50dBm
Max:22.0dBm
Min:<-50dBm
Max:21.5dBm
Min:<-50dBm
Max:23.0dBm
Min:<-50dBm
Max:23.0dBm
Min:<-50dBm
2) WCDMA BAND
WCDMA
BAND1
WCDMA
BAND2
WCDMA
BAND4
WCDMA
BAND5
WCDMA
BAND8
Freq. Band[MHz]
Uplink/Downlink
ARFCN range
Tx/Rx spacing 190MHz 80MHz 400MHz 45MHz 45MHz
Mod. Bit rate/
Bit Period
Period/Frame
Modulation
MS Power
Power Level
Sensitivity -106.7dBm -104.7dBm -104.7dBm -104.7dBm -104.7dBm
1920~1980
2110~2170
9612~9888
10562~10838
3.84 Mcps/s 3.84 Mcps/s 3.84 Mcps/s 3.84 Mcps/s 3.84 Mcps/s
10ms 10ms 10ms 10ms 10ms
UL : HQPSK
DL : QPSK
(+1~-3)dBm
Class3 Class3 Class3 Class3 Class3
1850~1910
1930~1990
9262~9538
9662~9938
UL : HQPSK
DL : QPSK
(+1~-3)dBm
1710~1755
2110~2155
1312~1513
1537~1738
UL : HQPSK
DL : QPSK
(+1~-3)dBm
824~849
869~894
781~4233
1006~4458
UL : HQPSK
DL : QPSK
(+1~-3)dBm
880~915
925~960
2712~2863
2937~3088
UL : HQPSK
DL : QPSK
(+1~-3)dBm
TDMA Mux - - -
Cell Radius - - -
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2. Specification
Freq.
Uplink/Downlink
19200 ~
1200~1949
Time Slot
Period
UL : QPSK
256QAM
UL : QPSK
256QAM
UL : QPSK
256QAM
UL : QPSK
256QAM
UL : QPSK
256QAM
UL : QPSK
256QAM
UL : QPSK
256QAM
3) LTE BAND
LTE
BAND1
LTE
BAND2
LTE
BAND3
LTE
BAND4
LTE
BAND5
LTE
BAND7
LTE
BAND8
Band[MHz]
ARFCN range
Tx/Rx spacing 190 MHz 80 MHz 95 MHz 400 MHz 45 MHz 120 MHz
Mod. Bit rate/
Bit Period
Period/Frame
Modulation
1920~1980
2110~2170
18000~18599
0~599
9Mbps/s
(at 10MHz
BW,50RB)
10ms 10ms 10ms 10ms 10ms 10ms 10ms
16QAM
64QAM
DL : QPSK
16QAM
64QAM
1850~1910
1930~1990
18600~19199
600~1199
9Mbps/s
(at 10MHz
BW,50RB)
16QAM
64QAM
DL : QPSK
16QAM
64QAM
1710 ~ 1785
1805 ~ 1880
19949
9Mbps/s
(at 10MHz
BW,50RB)
16QAM
64QAM
DL : QPSK
16QAM
64QAM
1710~1755
2110~2155
19950~20399
1950~2399
9Mbps/s
(at 10MHz
BW,50RB)
16QAM
64QAM
DL : QPSK
16QAM
64QAM
824~849
869~894
20400~20649
2400~2649
9Mbps/s
(at 10MHz
BW,50RB)
16QAM
64QAM
DL : QPSK
16QAM
64QAM
2500~2570
2620~2690
20750~21449
2750~3449
9Mbps/s
(at 10MHz
BW,50RB)
16QAM
64QAM
DL : QPSK
16QAM
64QAM
880~915
925~960
21450~21799
3450~3799
45 MHz
9Mbps/s
(at 10MHz
BW,50RB)
16QAM
64QAM
DL : QPSK
16QAM
64QAM
Max:22.5±2.7
MS Power
Power Level
Sensitivity -97dBm -95dBm -94dBm -97dBm -95dBm -95dBm
TDMA Mux - -
Cell Radius - -
dBm
Min:-49dBm
Class3 Class3 Class3 Class3 Class3 Class3
Max:22.5±2.7
dBm
Min:-49dBm
Max:23±2.7d
Bm
Min:-49dBm
Max:23±2.7d
Bm
Min:-49dBm
Max:24±2.7d
Bm
Min:-49dBm
Max:23±2.7d
Min:-49dBm
Bm
Max:24±2.7d
Bm
Min:-49dBm
Class3
-94dBm
-
-
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2. Specification
Freq.
k
Time Slot
Period
UL : QPSK
256QAM
UL : QPSK
256QAM
UL : QPSK
256QAM
UL : QPSK
256QAM
UL : QPSK
256QAM
UL : QPSK
256QAM
Band[MHz]
Uplink/Downlin
ARFCN range
Tx/Rx spacing 30 MHz 41 MHz 55 MHz
Mod. Bit rate/
Bit Period
Period/Frame
Modulation
LTE
BAND17
704~716
734~746
23730~23849
5730~5849
9Mbps/s
(at 10MHz
BW,50RB)
10ms 10ms 10ms 10ms 10ms 10ms
16QAM
64QAM
DL : QPSK
16QAM
64QAM
LTE
BAND20
832~862
791~821
19250 ~ 19950
1250~1950
9Mbps/s
(at 10MHz
BW,50RB)
16QAM
64QAM
DL : QPSK
16QAM
64QAM
LTE
BAND28
703~748
758~803
20400~20650
2400~2650
9Mbps/s
(at 10MHz
BW,50RB)
16QAM
64QAM
DL : QPSK
16QAM
64QAM
LTE
BAND38
2570~2620
2570~2620
37750~38249
37750~38249
9Mbps/s
(at 10MHz
BW,50RB)
16QAM
64QAM
DL : QPSK
16QAM
64QAM
LTE
BAND40
2300~2400
2300~2400
38650~39649
38650~39649
9Mbps/s
(at 10MHz
BW,50RB)
16QAM
64QAM
DL : QPSK
16QAM
64QAM
LTE
BAND41
2496~2690
2496~2690
39650~41589
39650~41589
9Mbps/s
(at 10MHz
BW,50RB)
16QAM
64QAM
DL : QPSK
16QAM
64QAM
Max:24±2.7dB
MS Power
Power Level
Sensitivity -94dBm -94dBm -95.5dBm -97dBm
TDMA Mux - -
Cell Radius - -
m
Min:-49dBm
Class3 Class3 Class3 Class3
Max:24±2.7dB
m
Min:-49dBm
Max:23.5±2.7dB
m
Min:-49dBm
Max:23±2.7dB
Min:-49dBm
m
Max:23±2.7dB
m
Min:-49dBm
Class3 Class3
-97dBm -95dBm
-
-
Max:23±2.7dB
Min:-49dBm
m
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2. Specification
TX Power
level
TX Power
level
2-3. GSM BAND TX power control level
TX Power
control level
5 33±2 dBm 33±2 dBm 0 30±2 dBm 0 30±2 dBm
6 31±3 dBm 31±3 dBm 1 28±3 dBm 1 28±3 dBm
7 29±3 dBm 29±3 dBm 2 26±3 dBm 2 26±3 dBm
8 27±3 dBm 27±3 dBm 3 24±3 dBm 3 24±3 dBm
9 25±3 dBm 25±3 dBm 4 22±3 dBm 4 22±3 dBm
10 23±3 dBm 23±3 dBm 5 20±3 dBm 5 20±3 dBm
11 21±3 dBm 21±3 dBm 6 18±3 dBm 6 18±3 dBm
12 19±3 dBm 19±3 dBm 7 16±3 dBm 7 16±3 dBm
GSM850 GSM900
control
DCS1800
control
PCS1900
13 17±3 dBm 17±3 dBm 8 14±3 dBm 8 14±3 dBm
14 15±3 dBm 15±3 dBm 9 12±4 dBm 9 12±4 dBm
15 13±3 dBm 13±3 dBm 10 10±4 dBm 10 10±4 dBm
16 11±5 dBm 11±5 dBm 11 8±4 dBm 11 8±4 dBm
17 9±5 dBm 9±5 dBm 12 6±4 dBm 12 6±4 dBm
18 7±5 dBm 7±5 dBm 13 4±4 dBm 13 4±4 dBm
19 5±5 dBm 5±5 dBm 14 2±5 dBm 14 2±5 dBm
15 0±5 dBm 15 0±5 dBm
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3. Operation Instruction and Installa ti on
Item
Description
OS
Android V6.0.1 (Marshmallow)
RF
LTE Cat.6 (300/ 50Mbps)
Battery
3,600mAh
Base Band
Exynos7880 1.9GHz Quad + 1.9GHz Quad(octa core)
Other RF
A-GPS, Glonass, Beidou,, BT4.2, USB Type C, NFC, WIFI 802.11 a/b/g/n/ac 2.4+5GHz, MST
Camera
16M+16M Camera
LCD
5.7" FHD OCTA
RAM
3GB RAM + 32GB UFS
Proximity Sensor, RGB Light Sensor
Ear phone: 3.5pi, 4pin
Main Function
Sensor
Accessory
Accelerometer, Barometer, Fingerprint Sensor, Gyro Sensor, Geomagnetic Sensor, Hall Sensor,
Charger: 5V/2A (AFC: 9V/1.67A)
Data cable : 1.2M C to A
C to B usb connector
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9. Reference Abbreviate
Reference Abbreviate
― AAC: Advanced Audio Coding.
― AVC : Advanced Video Coding.
― BER : Bit Error Rate
― BPSK: Binary Phase Shift Keying
― CA : Conditional Access
― CDM : Code Division Multiplexing
― C/I : Carrier to Interference
― DMB : Digital Multimedia Broadcasting
― EN : European Standard
― ES : Elementary Stream
― ETSI: European Telecommunications Standards Institute
― MPEG: Moving Picture Experts Group
― PN : Pseudo-random Noise
― PS : Pilot Symbol
― QPSK: Quadrature Phase Shift Keying
― RS : Reed-Solomon
― SI : Service Information
― TDM : Time Division Multiplexing
― TS : Transport Stream
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1. Safety Precautions
1-1. Repair Precaution
Before attempting any repair or detailed tuning, shield the device from RF noise or static
electricity discharges.
Use only demagnetized tools that are specifically designed for small electronic repairs,
as most electronic parts are sensitive to electromagnetic forces.
Use only high quality screwdrivers when servicing products. Low quality screwdrivers can
easily damage the heads of screws.
Use only conductor wire of the properly gauge and insulation for low resistance, because of the low margin
of error of most testing equipment.
We recommend 22-gauge twisted copper wire.
Hand-soldering is not recommended, because printed circuit boards (PCBs) can be easily
damaged, even with relatively low heat. Never use a soldering iron with a power rating of
more than 100 watts and use only lead-free solder with a melting point below 250°C (482°F).
Prior to disassembling the battery charger for repair, ensure that the AC power is disconnected.
Always use the replacement parts that are registered in the SEC system. Third-party replacement parts
may not function properly.
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1. Safety Precautions
1-2. ESD(Electrostatically Sensitive Devices) Precaution
Many semiconductors and ESDs in electronic devices are particularly sensitive to static discharge and can
be easily damaged by it. We recommend protecting these components with conductive anti-static bags
when you store or transport them.
Always use an anti-static strap or wristband and remove electrostatic buildup or dissipate
static electricity from your body before repairing ESDs.
Ensure that soldering irons have AC adapter with ground wires and that the ground wires are properly
connected.
Use only desoldering tools with plastic tips to prevent static discharge.
Properly shield the work environment from accidental electrostatic discharge before opening
packages containing ESDs.
The potential for static electricity discharge may be increased in low humidity environments,
such as air-conditioned rooms. Increase the airflow to the working area to decrease the
chance of accidental static electricity discharges.
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