Samsung SGH-M2310, GT-M2310 PSPEC

Specification
2.
2-1.
GSM General Specification
GSM850 EGSM 900 DCS1800 PCS1900
Uplink/Downlink
ARFCN range 128~251
Tx/Rx spacing 45MHz 45MHz 95MHz
Mod. Bit rate/
Bit Period
Time Slot
Period/Frame Period
GSM/
GPRS
Modulation
EDGE 8PSK 8PSK 8PSK
824~849 869~894
270.833kbps
3.692us
576.9us
4.615ms
0.3GMSK 0.3GMSK 0.3G MSK
880~915 925~960
0~124 &
975~1023
270.833kbps
3.692us
576.9us
4.615ms
270.833kbps
1710~1785 1805~1880
512~885 512~810
3.692us
576.9us
4.615ms
1850~1910 1930~1990
MHz
80
270.833kbps
3.692us
576.9us
4.615ms
0.3GMSK
MS Power 33dBm~5dBm 33dBm~5dBm 30dBm~0dBm 30dBm~0dBm
Power Class
Sensitivity -102dBm -102dBm -100dBm -100dBm
TDMA Mux 8 8 8 8
Cell Radius 35Km 35Km 2Km 2Km
max
(
4
+33
dBm)
max
(
4
+33
dBm)
max
(
1
+30
dBm)
max
(
1
+30
dBm)
2-1
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Specification
2-2.
GSM TX power class
TX Power
control level
5 33±2
6 31±2
7 29±2
8 27±2
9 25±2
10 23±2
GSM850 GSM900
dBm
dBm
dBm
dBm
dBm
dBm
TX Power
control
level
030±3
128±3
226±3
324±3
422±3
520±3
618±3
DCS1800
dBm
dBm
dBm
dBm
dBm
dBm
dBm
TX Power
control level
PCS1900
030±3
128±3
226±3
324±3
422±3
520±3
618±3
dBm
dBm
dBm
dBm
dBm
dBm
dBm
11 21±2
12 19±2
13 17±2
14 15±2
15 13±2
16 11±3
17 9±3
18 7±3
19 5±3
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
716±3
814±3
912±4
10 10±4
11 8±4
12 6±4
13 4±4
14 2±5
15 0±5
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
716±3
814±3
912±4
10 10±4
11 8±4
12 6±4
13 4±4
14 2±5
15 0±5
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
2-2
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Specification
RF Circuit Description of GT-M2310
1.
RX PART
1-1.
RX SAW FILTER+Tx Module Intergrated Circuit
­RF Saw filter passes onlyaspecific frequency&controlled by signal received from the main chip. Each Mode controlled by Tx Module Circuit. The logis is like below
BAND MODE BS1 BS2 TX_EN GSM850 Rx1 GSM900 Rx2
DCS Rx3 PCS Rx4
DCXO(OSC100)
­This module generates the26MHz reference clock to drive the logic and RF. After bufferingareference clock of26MHz is supplied to the other parts of the system through the transceiver pin OUT.
TRANSCEIVER(U10
­The Aero4208 transceiver isacomplete RF front end for multi-band GSM and GPRS wireless communications. The receive section interfaces between the RF bandselect SAW filters and the baseband subsystem. The Aero4208 receiver leveragesaproven, digital, low-IF architecture and enablesauniversal baseband interface without the need for complex dc offset compensation. The transmit section of Aero4208 provides
complete upconversion path from the baseband subsystem
a to the power amplifier(PA) using an offset phase-locked loop(OPLL) integrated with Silicon Laboratories` patented synthesizer technology. All sensitive components, such as TX/RF VCOs, loop filters, tuning inductors, and varactors, are completely integrated intoaSingle integrated circuit. The Aero4208 transceiver includesadigitally-controlled crystal oscillator
DCXO) and completely integrates the reference oscillator and
(
varactor functionality.
2)
000 010 110 100
2-3
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TX PART
1-2.
The transmitter is fully differential usingadirect up conversion architecture.
-
It consists ofasignal side band power up mixer.
Gain is controlled by6dB via3-wire serial bus programing. The fully integrated VCO and power mixer achieve LO suppression, quadrature phase error, quadrature amplitude balance and low noise floor specification. Output
1-3.
This model support GSM(GPRS)&EDGE Rx mode. And In US, This model can support only GSM850/PCS Band. Antenna sends signal to the base station&receives the signal from the base station. It isaQuad-Band Antenna.
Baseband Circuit Description of GT-M2310
2.
matching/balun components drive a standard 50 ohms single ended load.
Overall
Specification
PCF50615(U30
2-1.
The PCF50613isahighly integrated solution for power supply generation, and battery management and charging. Eight low-dropout regulators designed specifically for GSM applications power the terminal and help ensure optimal system performance and long battery life.
programmable boost converter provides support for
A whileaself-resetting, electronically fused switch supplies power to external accessories. Ancillary support functions, Clock generator, aid in reducing both board area and system complexity. I2C BUS serial interface provides access to control and configuration registers. This interface givesamicroprocessor full control of the PCF5061 and enables system designers to maximize both standby and talk times. Supervisory functions. includingareset generator, an input voltage monitor, andatemperature sensor, support reliable system design. These functions work together to ensure proper system behavior during start-up or in the event ofafault condition(low microprocessor voltage, insufficient battery energy, or excessive die temperature).
Clock Generator
­The Clock Generator(CG) generates all clocks for internal and external usage. The
32.768
for the PCF50613and other circuitry.
0)
1.8V,3.0V
such as RTC module and High Voltage Charge pump,
kHz crystal oscillator provides an accurate low clock frequency
SIMs,
3
2-4
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Specification
LCD Connector
2-2.
LCD is consisted of main LCD(2. SUB LCD( BACKLIGHT signal(LCD_BL_EN) enables white LED of main LCD. These signal is from UCP200.8-bit data lines(LD(0)~LD(
and commands to LCD. Data and commands use"RS" signal. If this signal is high, Inputs to LCD are commands.
If it is low, Inputs to LCD are data. Power signals for LCD are"LCD_VDD_2.9V".
Key
2-3.
This is consisted of key interface pins KEY_ROW(0:4) and KEY_COL(0:4) in PNX6508. These signals compose the matrix. Result of matrix informs the key status to key interface in the PNX6508. Power on/off k ey is separated from the matrix. So power on/off signal is connected with PCF5061 to enable PCF50613.Key LED is consisted of two white EDs(for optical waveguide).
1.07",
CSTN
64K
colors).
0",
QQVGA,
262K
colors)
3
&
transfers data
7))
IF connector(IFC
2-4.
It is VDD_IO_HIGH_2.9V, JACK_IN, TXD1, RXD1, AUX_ON, USB_DP, USB_DM, BUS_5V_IF, TXD1_J, RXD1_J, AUX_ON_J, USB_DP_J, USB_DM_J, VBUS_5V_J and GND. They connected to power supply IC, microprocessor and signal processor IC.
2-5.
This system uses Samsung's memory, KAP29VG00B-A444. This isaMulti Chip Package Memory which combines Burst Multi Bank NOR Flash Memory and and It has16bit data line, HD[0~15] which is connected to PNX6508, also has24bit address lines, HA[1~24]. There are3chip select signals, CS0n_FLASH, CS4n_NAND, and CS1n_RAM. In the Wrting process, WEn is fallen to low and it enables writing process to operate. During reading process, OEn is fallen to low and it enables reading process to operate. Each chip select signals in the PNX6508 choose different memories.
pin connector. They are designed to use VBAT, V_EXT_CHARGE_5V_IF
20-
Memory(UME200)
Mbit Synchronous Burst UtRAM.
128
500)
256
Mbit OneNAND Flash
256
Mbit Synchronous
,
2-5
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PNX6508(UCP
2-6.
The PNX6508 is the GSM/GPRS applications. The IC combines the high performance digital and analog baseband functionalities for mobile terminals. The PNX6508 provides support for quadruple band, multi-slot, GSM/GPRS/EDGE operation. This is achieved by integrating the RD16024 DSP and the ARM946E-S microprocessor from ARM as well as integrating DSP and system controller memory. All required A/D and D/A converters and filters foramobile terminal baseband are also integrated. Future needs and extensions are supported with the high processing power and by the prototyping features of the IC. The PNX6508 is specified to support SW development with large part of the DSP memory map implemented with SRAM-whereas stable firmware code is stored in ROM, enough memory is provided in SRAM for new firmware modules. This baseband features state of the
lowest powe r dissipation,
implemented in advanced and stable CMOS technology of NXP Semiconductors.
200) baseband processor of NXP Semiconductors for
2.5G
art circuit implementations providing
and highest integration. The IC is fully
Specification
2-6
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