Samsung SGH-L700 Block Diagram

Block Diagrams
8.
8-1.
RF Block Diagram
8-1
SAMSUNG Proprietary-Contents may change without notice
This Document can not be used without Samsung's authorization
8-2.
Base Band Solution Block Diagram
BATTERY
VBA TT_4.2_
3.3V
RF3159 (WCDMA PAM)
VBAT T
MA X2507 (L CR Tran s mi tt er)
VCC PA /VCCAU X/V CCDR V/
VCCMOD/VCC1
USB
USB_VBUS_5V
R1141Q33 1D-TR
(120mA LDO )
JTAG_34PIN
SAPA 1D1
(Cla ss D Audio AMP)
BH18FB1WHFV
(150m A LDO)
MIC5219-3.3YML
(500m A LDO)
XC6401FF 49DR
(150 mA DUAL LDO)
IP4058CX8 (USB Filter)
PNX5217 (Mod em )
USBVBUS5V
GEN IE_J TA G_3.3V
VDD_ETM
2MEGA CA MERA
LCD
CONNECTOR
TA
VEX T_5V
LCD
CONNECTOR
LT C321 0EUD -2
(Charge Pump LED
Con tro ller)
BH 33FB 1WHF V-TR
(150 mA LDO)
R1114D331D-TR-F
(150 mA LDO)
R1114D281D-TR
(150 mA LDO)
R1114D181D-TR-F
(150 mA LDO)
EM-1681-FT
(HALL S witch)
TSC2 003IZQ C
(Tou ch Scr een P ad)
(L CD Dr ive IC)
VDD _BL _3.3
(L CD B ac kligh t)
VDD_VIB
(Motor)
VGA CAMERA
BC 51E129B1 4(lue tooth )
VDDR3V/VDDR5V
PNX5217(Modem )
VDDE2/VDDE5/ADC3/VDDE1PR
PNX5217(Mod em)
VDDBB/B DDC LK/VDD VB/VD DREF
GENIE-TD60186(TDS MODEM)
(AUD IO A NALO G SW ITCH)
MA X23 92EGI (LCR Receiv er)
MA X250 7 (L CR Tr an smi tter)
VCC PLL/VCCC P/VCC VCO
AERO422 1 (GSM Tr an sc eiv er)
VCC PLL/VCCC P/VCC VCO
VDDE2
CA20(MAX19700, ABB )
AVDD/R EFIN/OV DD
PNX5217(Modem )
VDD VBO
STG3 699B VTR
PNX5217(Modem )
VDDA3/VDDE3/GPIOA25
USIM
PNX5217(Modem )
VDDE4
VCC
PCF5062 2
VCH G
VD D_GS M_COR E_1.2 V
(DCDC_900mA)
VDD _ME M_CORE _1.8V
VDD _GENIE_C ORE_1.8V
(DCDC _600mA )
VDD _BT_2 .6V (LDO_150mA)
VDD_IO _HIGH_ 2.9V
(LDO_150mA)
AVDD _2.65 V
(LDO_150mA)
VDD_LCR_HIGH_2.8V
VDD_LCR_HIGH_ABB_2.8V
(LDO_150mA)
VDD_MEM_CARD_2.9V
(LDO_150mA)
VDD_KEY_LED_3.3V
(LDO_150mA)
AVDD_HFA_2.75V
(LDO_250mA)
VDD _IO_ LOW _1.8V
VDD_IO_LOW_A
VDD_LCR_L OW _1.8V
(L DO_1 50m A for th e IO pads )
VDD_USB_3.3V
USB_VBUS
(LDO_50mA to supply a USB)
VDD _SIM _3.0V
(LDO_ 70mA to supply a USIM)
VDD_SYN_2.8V
(L DO_1 50mA for lo w no is e)
VDD_RX_TX_2.8V
(L DO_1 50mA for lo w no is e)
VDD_RX_2.8V
(LDO_100m A for low noise)
VDD _TX_2 .8V
(LDO_100m A for low noise)
PNX5217(Mod em)
VDDC
K5 D1G12ACD-D07 5
VCC/VDD/VCCQ/VDDQ
TC7S H08 FS0(AND Gat e)
GE NIE-T D60186
T-FLASH (SCHA2B0200 )
KYE LED
BC51E129B1 4 (BT)
VDDO18
AERO422 1( GSM Tran sc eiv er)
74VCX1632245T BR( JTA G)
2DIR/VCCA
PNX5217(Mod em)
JSEL1/VDDE1
GE NIE-T D60186
VDDE1/VDDA
SN74LVC1G1 23DCU R
AERO422 1 (GSM T ran sc eiv er)
VCCIF/TXVCC
TC7 SH32 FS(OR G ate )
LSHS-D085U K(F EM)
MA X23 92EGI (LCR Rece ive r)
VCC/G _LNA /G_MXR
MA X2507 (L CR Tran smi tter)
VCC TXBIA S
(Memo ry)
VCC
VDDC
VDDL
VCC
VCC
VDD
JTAG-34PIN
MAX 4720ELT+T (Anal og Swit ch )
2SC 4617 (Trans iste r)
V+
Collector
8-2
SAMSUNG Proprietary-Contents may change without notice
This Document can not be used without Samsung's authorization
VDD_PLL_1.2V
(LDO_5mA)
Micbi as lo w noise voltag e regulator
VB US
MIC _BIA S
PNX5217(Mod em)
VDDA2/V DDCG U
MIC / EAR _MIC
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