Samsung SGH-i8510 Block Diagram
Block Diagrams
8.
8-1.
Block Diagram
oPweO rn kcolB
_SPHODLUP_
rFomO MAP
Fr moT W0304L
Po ewr ek ylcick
IF c elbani sert oin
IF C_NONES_ES
SPH_DLO_FFr moM SM 8260
SDRAM 52 M6bit
D1[ :13]0[1A:21]0
6MSM281
EDOM()M
PS_HO DLF_
PGS
ANL
WAS
X
X
T
T
B
B
L
H
12577YKS
P G2(A)M
F(EM)
Id Q/ata
T(cnarviee)r
X
X
X
X
R
R
R
R
0
0
0
5
S
S
9
8
C
C
M
M
P
D
S
S
G
G
5-AML4PSML50
5826RTR
elpuDxre
YSNES
NOWS_
aM PCMnieMomyr
NA DN15 M2bit
X
R
0
0
1
2
S
T
M
U
elpuDxre
2D7[:0]
LCK
YSNC
ODTU
NID
X
R
0
0
9
S
T
M
U
Uc BSsni elbaetrnoi
BVUS
V5.2
EDT
PHON CA_ETIVE03
nINT D_RPMAM_MS
DP_ACATIEVM_MS
MPI_NTN_
SM_MPSOHLD
LS_PEECLK
UATOP_WR
TMU(2S001
AP)M
MPCA-1737
AP)M
EKWP_YRON
IF NES_ES81
UATO WP_R
WP_RTED
XT
WAS
07177YKS
lpuoCre
STMU(009
rFom
taBteyrc nnocetor
_VTAB
RTs
oTO MAP
oTO MAP
To MP 6B856
SM_MPSOHLD
2D1[5:0]
A2[ :31]1
oNrma iov lcis engla
TRAU
WS
-GATJ
43
ABVT
To MP 66B58
InNT D_RPMA
MP6 856
)CIMP
XT
WAS
oTP WRON
niT W304L0
Dec redo
N
_
T
E
S
E
R
_
E
N
O
P
MEDOM(
/IO_L
Ctnolor
dAL_d
SUMI
PDA_ XR3D0
PNIUT
eRadR eg
UOTPUT
rDiveR eg
LLAH
CI
DPA_ACTI3EV0
DP_ATXD30
PDMAR
EMOMYR
AARRY
NOPE
O_N30
.35
eHdates
S2KP
/IO_R
Ctnolor
R_ddA
Dec redo
oCntrol
oLcig
V471XC422365
S leveLhretfi
3(.0 <V>18.V)
23KCLKOUT
KPS1
syoJitkc
VTAB
oNlamrciov e
SSM 3260
PSPMAK
AM9X 722
RAEPMA
SNDH
lacitpO
OMOITN
OMSUE
reSi tad laa
.3V3
EDT
VIO .1_V8
AER_ADC
rFom
3#
.35
Norma v locies ingla
IS3074
eRecevir
gis XRnal
RKPS
LKPS
RAER_
Ster oeeh daset uo pttu
AER_L
V1.3V8.1><
-NI
.18V
Compar taro
+NI
PGMC_D[ :51]0
MPGCA_[13:]1
23KCLKUOT
SP_HOLD_UP
HPONE_CATIVE
HnLANO_L
DP_ACATIEV
DPT_AXD
DP_ARXD
OPNE NO_
S
I2
TB
CPM
WS
CPMD ATA
2IS
1CIM
2CIM
CIM RAE
AROID_L
AROID_R
ludoM MF()e
Ster oes peaker uo pttu
32 7.86zhk
23KCLKOUT
oT ,PAMO
TB ,MF
/NIOUT
retfihs leveL
EAR_ YEK
CPM
PW _RED1T
M
C
P
TB
WS
OMSUE
laireSad ta
Mc 5PSB
reSi tad laa
Mc SB2P
TB
tniefrcae
/MDT2IS
tniefrcae
oVice CP M
tniefrcae
iaMn
iMc
uSb
iMc
teSdaeH
iMc
retSA oeuxiliary
itupn
AER_M
RAEP_
rPedrive
uOtR ,L
iSlgn-edne
uotR ,L
CTR
32 zHk
oPweC r ont orl
B(b-SBackpu
VTRR-CVULO)
MPGC
duAio
CL /KNYSC
Mc SB3P
Se tad laira
Mc IPS
LEEB1W CDH3
RBF6 003
B(T)
CPM
Vo ciF eitlsre
R(T & XX)
iDgi atl CIM
tniefrcae
oPweA rgolan
lCock
cilSre
Powe vorP rredi
(L OD-sCDCD)s
Q
IR
IPGO/
AURT1
AURT3
/12/3
ISS1
ro(H SI
M niIIP)
nOeNand- aM PAineM omyr
Mc SB4P
IPGO/
Setad laira
AUTR2
U/SB1
W1521L
W(Fi)i
62Mhz
AlatigiD oidu
duAi& o
+
iVbc otn
uAoid
LLP
A udi A on gola
Trehmal
Mtinoor
ySstme
Po ewr eR ferences
V(fer-Irfe-B dna)paG
D3
sneS
C
2
I
PGIOs
ARM1 631
SPI ENNR
DASD2C( CP s-vale)
3Lm ani MS A_XPE
I2AVD( 001+PSco)er
eM POPomyr
ANDN2 Gibt
G1ibt
McB 1PS
PGIO/
Serial d aa
t
PSI2
23CKKLUOT
Wr eppar
iDgi atl
CR
sOci tallro
irBthgssen
sneS
c(pmoois)t
iDspla _ySS
cnEoder
Ctnorellor
N- TSC/PAL
-5733c orols
aCemra_SS
aCemraFI
-8/-b-21itrap lella
-One PCC 1
SOt imer
23kHz
Q
IR
)PA( 0342PAMO
2IC
oCntrol
Ctno enil lor
ebtw neeT W04L03
MO dnaPA
T
N
U
O
O
Q
R
T
L
E
A
E
W
C
R
D
S
P
S
K
S
E
S
_
L
_
R
E
R
C
R
_
_
R
W
W
n
M
S
P
P
_
Y
R
S
A
S
Y
W
S
n
oCntrol
2IC
aDat/
AU4TR
Tr snacevire
BC iD Igiatl
DEL
iDgiatl
ELD
tStae-Mach eni
anAlgo
4LWT300(P IDUA+CIMO_CO)CED
oPrewD igital
eScon yrad
Inte tpurr
HeldnarS IH
TRC Sadnuhn
tarbiVro
Ctnolor(D)
VT
S/CMM1D
S/CMM2D
US TO_BG
Fu 1 ll.0
12M spb
US TO_BG
Hi hg.2 0
M084pbs
iHgh
Sdeep
SUB
tniefrcae
]
:0
[7
A
T
A
D
_
S
H
0
B
S
U
olanAg
aCr-kit
Inte frcase
TOG
Mludoe
SUB2.0
AMCD
iDgi atl
mStra
eRlfex
FI
0
0
.
3
2
0
4
B
L
S
U
W
r
T
o
o
F
T
+
D
SUB
iDgiatl
T(r snacevier)
CLD_D[ :42]0
LC _Docntrol
M8NE_
Pa ellarl
&eR est
uM(mitledaieM omyr)
61NAN BGDlfhsa
AT_OFF
TA c_ennoct
GC_HING_N
+D
-D
D
UwoP BSer
puSpyl
SUB
cerPraheg
Meludo
yeK(dapD)
CBI nA gola
AMCD
Agolan
MPCM ast re
MPC valS e
Sl vaCO eP
Wr eppar
13M 3/zH2zHk
oMNivADN
iDgi atl
iHgh
eepSd
LCK
WPRON
oCtnorellr
TLC4 X870
SUB
WS
BSUWS
UBVS
AE6
OBTO1
OBOT0
egrahC()CI r
oc M61rol
P
IS
iMorc
HPONE_D+
HPNOD_E-
62Mhz
KP _D[C7:0]
KP _D[R7:0]
RAEA_DC
VTAB
VTAB
DCL AGVQ
ICF_EN
BSU
To MP B8566
For U 1BS.0
ACAREM
ACAREM
FV
Km YEatrxi:
aCemra ek y
aMin ek y
isde ek y
ACL MDOs
M8
FIC
V2.1
V8.2
V8.2
V8.2
V8.1
V8.1
8
-1
SAMSUNG Proprietary-Contents may change without notice
This Document can not be used without Samsung's authorization
Block Diagrams
8-2.
RF Solution Block Diagram
kcolb medoM
SP_HOLD_F
SPGtnA
PGANLS
WAS
CMaM PineM omyr
NA DN15 M2bit
SDRAM 52 M6bit
D1[ :13]0A1[:21]0
6MSM281
DOM(E)M
ad Q/Iat
LCK
YSNC
ODUT
NID
2D7[0:]
PHON CA_ETIVE03
InNT D_RPMAM_SM
DPA_ACTI _EVMSM
MPI_NT_N
SM_MPSHOLD
EELSC_PLK
UATOP_WR
[2A:31]1
AURT
WS
TJAG-34
2D[15:0]
oNrma iov lcis engla
(M IMP MEDOC)
nINT D_RPMA
566MP8
PNIUT
LLAH
CI
DPA_CATIEV03
DP_ATXD30
DPR_AXD30
PDRAM
EMOMRY
AARRY
PO EN_O3N0
O/I_R
oCntrol
AR_dd
Dec redo
oCntrol
oLcig
V471XC6 42235
S leveLhretfi
3(<V0.8.1>V)
ADP
APRT
/IO_L
oCntrol
AL_dd
eDoc der
eRad eR g
UOTPUT
rDiveR eg
N
_
T
E
S
E
R
_
E
N
O
P
SUMI
TRR6 582
(T ariecnrev)
WP_REDT
X
X
T
T
B
B
L
H
577YKS12
An annet
(2 MAP G)
X
X
X
R
0
0
9
M
S
G
-AML4PSML055
F()ME
X
R
R
R
0
5
S
S
8
C
C
M
P
D
S
G
X
R
0
0
1
2
S
T
M
U
lpuDrexe
lpuDxere
X
R
0
0
9
S
T
M
U
XT
WAS
177YKS07
TMU(2SP 001AM)
lpuoCre
737-MPCA1
STMU(009AP )M
8
-2
XT
WAS
SAMSUNG Proprietary-Contents may change without notice
This Document can not be used without Samsung's authorization
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