Samsung sff9140 Datasheet

Advanced Power MOSFET

SFF9140

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -100V Lower R

: 0.161 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, from case for 5-seconds

1/8”

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

BV R

DSS

DS(on)

= -100 V

= 0.2

Ω

ID = -13.2 A

TO-3PF

1

2

3

1.Gate 2. Drain 3. Source

-100

-13.2

-9.2

1

O

2

O

1

O

1

O

3

O

53

+

_

20

348

-13.2

8.0

-6.5 80

0.53

- 55 to +175

300

V A A

V

mJ

A

mJ

V/ns

W

W/oC

o

C

Thermal Resistance

Symbol Typ.

R

θJC

R

θJA

Characteristic Max.

Junction-to-Case

Junction-to-Ambient

Units

--

1.88 40

o

C/W

SFF9140

P-CHANNEL

POWER MOSFET

Electrical Characteristics (T

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

BV ∆BV/∆TJ V

R

DSS

GS(th)

I

GSS

I

DSS

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

gs

Q

gd

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge

g

Gate-Source Charge Gate-Drain( “ Miller “ ) Charge

=25oC unless otherwise specified)

C

VGS=0V,ID=-250µA

-100

--

-2.0

--

-0.11

--

8.9

1180

240

83 14 22 45 26 43

7.4

17.8

-100

1535

--

-4.0

100

-10

0.2

--

360 125

40 55

100

60 54

--

V

ID=-250µA See Fig 7

V/oC

VDS=-5V,ID=-250µA

V

VGS=-20V

nA

VGS=20V VDS=-100V

µA

VDS=-80V,TC=150oC

VGS=-10V,ID=-6.6A

Ω

VDS=-40V,ID=-6.6A VGS=0V,VDS=-25V,f =1MHz

pF

See Fig 5

VDD=-50V,ID=-17A, RG=12

ns

See Fig 13

VDS=-80V,VGS=-10V,

nC

ID=-17A

See Fig 6 & Fig 12

4

O

4

O

Ω

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=3.0mH, IAS=-13.2A, VDD=-25V, RG=27Ω*, Starting TJ =25oC

O

3

ISD -17A, di/dt 450A/µs, VDD BV

O

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

_

<

_

<

_

<

, Starting TJ =25oC

DSS

O O

--

-13.2

1

--

4

--

135

--

0.7

_

<

-53

-4.0

--

A

V ns µC

Integral reverse pn-diode in the MOSFET TJ=25oC,IS=-13.2A,VGS=0V TJ=25oC,IF=-17A diF/dt=100A/µs

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

1

- 5.5 V

10

- 5.0 V Bottom : - 4.5 V

0

10

, Drain Current [A]

D

-I

-1

10

-VDS , Drain-Source Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

SFF9140

1

10

175 oC

25 oC

0

10

, Drain Current [A]

D

-I

-1

1

10

2 4 6 8 10

- 55 oC

-VGS , Gate-Source Voltage [V]

@ Notes :

1. VGS = 0 V

2. VDS = -40 V

3. 250 µs Pulse Test

0.6

0.5

]

Ω

, [

DS(on)

R

0.4

0.3

0.2

VGS = -10 V

Drain-Source On-Resistance

0.1

0.0 0 8 16 24 32 40 48 56 64

VGS = -20 V

-ID , Drain Current [A]

2000

C

1500

1000

Capacitance [pF]

500

iss

C

oss

C

rss

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

-VDS , Drain-Source Voltage [V]

@ Note : TJ = 25 oC

@ Notes :

1. VGS = 0 V

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

175 oC

, Reverse Drain Current [A]

-I

DR

-1

10

25 oC

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

@ Notes :

1. VGS = 0 V

2. 250 µs Pulse Test

-VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

10

5

, Gate-Source Voltage [V]

GS

-V

0

0 10 20 30 40 50

VDS = -20 V VDS = -50 V

VDS = -80 V

@ Notes : ID =-17 A

QG , Total Gate Charge [nC]

SFF9140

P-CHANNEL

POWER MOSFET

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2

1.1

1.0

, (Normalized)

DSS

-BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Junction Temperature [oC]

Operation in This Area is Limited by R

2

10

1

10

, Drain Current [A]

-I

D

0

10

@ Notes :

1. TC = 25 oC

2. TJ = 175 oC

3. Single Pulse

DS(on)

DC

@ Notes :

1. VGS = 0 V

2. ID = -250 µA

1 ms

10 ms

0.1 ms

2.5

2.0

1.5

, (Normalized)

1.0

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

@ Notes :

1. VGS = -10 V

2. ID = -8.5 A

TJ , Junction Temperature [oC]

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

15

12

9

6

, Drain Current [A]

D

-I

3

-1

10

0

10

1

10

2

10

-VDS , Drain-Source Voltage [V]

0

25 50 75 100 125 150 175

Tc , Case Temperature [oC]

Fig 11. Thermal Response

0

10

D=0.5

@ Notes :

0.2

0.1

0.05

-1

10

0.02

0.01

(t) , Thermal Response

JC

θ

Z

-2

10

-5

10

single pulse

-4

10

t1 , Square Wave Pulse Duration [sec]

1. Z

2. Duty Factor, D=t1/t

3. TJM-TC=PDM*Z

-3

10

-2

10

(t)=1.88 oC/W Max.

JC

θ

P

DM.

t

-1

10

2

(t)

JC

θ

1.

t

2.

0

10

1

10

P-CHANNEL

POWER MOSFET

SFF9140

Fig 12. Gate Charge Test Circuit & Waveform

-10V

“ Current Regulator ”

200nF12V

-3mA

V

R

G

50KΩ

300nF

V

GS

R

1

Current Sampling (IG)

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

V

out

in

DUT

Same Type

as DUT

DUT

R

2

Current Sampling (ID)

Resistor

R

L

V

DD

( 0.5 rated V

V

GS

Q

-10V

V

DS

Q

gs

g

Q

gd

Charge

t

on

t

d(on)tr

)

DS

V

in

10%

90%

V

out

t

off

t

f

t

d(off)

Vary tp to obtain required peak I

-10V

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV

L

V

DS

D

R

G

L

I

D

V

DD

C

V

DD

E

= LL I

AS

----

1 2

ID (t)

2

AS

t

p

DSS

-------------------BV

-- V

DSS

DD

Time

V

(t)

DS

DUT

I

AS

t

p

BV

DSS

SFF9140

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

V

DS

DUT

--

I

S

L

P-CHANNEL

POWER MOSFET

V

GS

( Driver )

I

S

( DUT )

V

DS

( DUT )

V

GS

V

GS

Driver

R

G

D =

IFM , Body Diode Forward Current

Compliment of DUT

Gate Pulse Width

-------------------------Gate Pulse Period

Body Diode

Forward Voltage Drop

(N-Channel)

• dv/dt controlled by “RG”

• IS controlled by Duty Factor “D”

Body Diode Reverse Current

I

RM

di/dt

V

f

V

DD

10V

V

DD

Body Diode Recovery dv/dt