Samsung SCX-1100 Schematics Diagram

Repair Manual
Repair Manual
1. Block Diagram
2. Connection Diagram
3. Circuit Description
4. Schematic Diagrams
CONTENTS
INKJET RINTER(MFP)
1
1-1
Samsung Electronics
BLOCK DIAGRAM
Repair Manual

1. Block Diagram

SMPS
(15)
Main
Controller
(U21)
Image
Processor
OA-980
Main Clock
10MHz
RESET
CONTROLLER
FLASH ROM
ADC
16bit
(U16)
SDRAM
1M* 16bit
(U9)
CARRIER
MOTOR
LINE FEED
MOTOR
(30V, 3.3V)
AC
(110~240V)
CCD Module
( COLOR 600DPI )
SCAN MOTOR
( Bi-POLAR STEP )
SCAN STEPPER
MOTOR DRIVER
COLOR
CARTRIDGE
MONO
CARTRIDGE
PRINT HEAD(2PEN)
60DPI DOUBLE HEIGHT
ENCORDER
SENSOR
ENCODER
USB CONN
PC
48MHz
(AU1)
BUZZER
(U27)
SDRAM
(4M 16bit)
1284 CONN
(U1)
HEAD
Driver
IC
/REQ /ACK
KEY PANNEL
LCD
Mcro Controller (U1)
(U5)
(U10,U14)
POWER
MAIN
OPE
SCANNER
+30V
+5V
+12V
+3.3V
PAPER EXIT
SENSOR
(U4)
Motor
Driver
& Regul at or
(U13)
(U7)
ARM7TDM
MEM CNTR
Head Control I/F
SCAN CNTR
DERASTERIZER
UART 3
IEEE 1284
TIMERS
I/O PORT
INT. CNTR
USEB
DM 2
2
2-1
Samsung Electronics
CONNECTION DIAGRAM
Repair Manual

2. Connection Diagr am

• Reffer to the Schematic diagram(see page 4-2)
3
3-1
Samsung Electronics
CIRCUIT DESCRIPTION
Repair Manual

3. Circuit Description

3-1. GENERAL DESCRIPTION

Main circuit consists of mainly consists of CPU and the controller part with various types of built-in I/O device driver(built-in RISC Processor Core: ARM7TDMI), system memory part, OA980 controlling input of image received from media and con ­version, CF(COMP ACTstorage card) interface part. The following nomenclatures by section is the same as those listed in the circuit diagram.

3-2. MEMORY MAP

The entire Addressing area provided by MAIN CONTROLLER(S3C46MOX(Jupiter3)) is 256MBytes from 0x00000000 to 0x10000000, and the Max. Address Range for each External Chip Select is 32M Byte or Half word from 0x000000 to 0x01FFFFFF and embodied with Big-Endian Bus interface. MEMORY area is divided into EXTERNAL ROM and RAM areas(See (Figure 1)), and the areas actually used are 2M/8M BYTES SDRAM and 1M BYTES ROM(FLASH MEMORY). In case of SDRAM, it uses 0xC200000h ~ 0xC3FFFFFh(2MB), and ROM uses 0x0000000h ~ 0x0FFFFFh area.
<Figure 1. S3C46MOX(Jupiter3) MEMORY MAP>

MAIN PBA

3-2
CIRCUIT DESCRIPTION
Samsung Electronics
Repair Manual

3-3.DETAILED DESCRIPTION

3-3-1 BLOCK DIAGRAM and MAIN CONTROLLER description

3-3-1-1 GENERAL DESCRIPTION
MAIN CONTROLLER(S3C46MOX(Jupiter3),U15) consists of this system consists of CPU(ARM7TDMI RISC PROCES­SOR), 8K BYTES CACHE, DATAand ADDRESS BUS, PLLderiding input frequency and CLOCK CONTROL part, SERIAL COMMUNICATION part supporting UART, PRINT HEAD control part, PARALLELPORT INTERFACE part, USB INTERFACE part, External DMApart for receiving data from external COLOR IMAGE PROCESSOR(OA­980,U21), MEMORY and EXTERNAL BANK control part, SYNCHRONOUS SERIAL INTERFACE control part for inter­facing Thunderbolt, and LF/CR Motor drive control and general purpose I/O control parts.(See Figure 2 )

3-3-2 S3C46MOX(Jupiter3) FUNCTION DESCRIPTION

3-3-2-1 SYSTEM CLOCK
There are two ways of Clock input method. One is the method to make Master Clock(MCLK) at the internal PLLby con­necting X-tal and Capacitor to the outside, and another method is to use MCLK(When inputting 40MHz) directly, which supplies maximum 40MHz Clock to the EXTCLK terminal(PIN65). The range of frequency being input in case of using X-tal is limited to 4MHz~10MHz. This system uses SSCG(FS781) with a 10MHZ X-tal outside to make MCLK, and sup­plies Clock to the XIN terminal(PIN67) of ASIC by expanding Spectrum with bandwidth about 1.5% in comparison with the basic frequency by using this IC. Inside the ASIC, the PLL makes 66MHz MCLK signal, which is the basic operation frequency of the System. Also, this PLLmakes 48MHz, the operation frequency of USB Controller.
3-3-2-2 DATAAND ADDRESS BUS CONTROL
1. /RD & /WR
/RD & /WR SIGNAL are synchronized with the inside MCLK(66MHZ) and becomes active to Low. These signal are Strobe Signal used to Read or Write data when each Chip Select becomes active connected to /RD,/WR PIN of RAM, ROM, OA-980.
2. CHIP SELECT (/ROMCS, /IP_CS,/MED_CS,/SCS0,/SCS1)
- /ROMCS : FLASH MEMORY(U7) CHIP SELECT (LOW ACTIVE)
- /IP_CS : OA-980(U21) CHIP SELECT (LOW ACTIVE)
- /SCS1 : SDRAM(OPTION)(U12) CHIP SELECT(LOW ACTIVE)
In case each Chip Select is low, it may Read or Write data.
3. D0 ~ D15
- 16BIT DATA BUS
4. A0 ~ A24
- ADDRESS BUS (A23 ~ A24 RESERVED)
3-3
Samsung Electronics
CIRCUIT DESCRIPTION
Repair Manual
<Figure 2. Block Diagram of Main Part>
SMPS
(15)
Main
Controller
(U21)
Image
Processor
OA-980
Main Clock
10MHz
RESET
CONTROLLER
FLASH ROM
ADC
16bit
(U16)
SDRAM
1M* 16bit
(U9)
CARRIER
MOTOR
LINE FEED
MOTOR
(30V, 3.3V)
AC
(110~240V)
CCD Module
( COLOR 600DPI )
SCAN MOTOR
( Bi-POLAR STEP )
SCAN STEPPER
MOTOR DRIVER
COLOR
CARTRIDGE
MONO
CARTRIDGE
PRINT HEAD(2PEN)
60DPI DOUBLE HEIGHT
ENCORDER
SENSOR
ENCODER
USB CONN
PC
48MHz
(AU1)
BUZZER
(U27)
SDRAM
(4M 16bit)
1284 CONN
(U1)
HEAD
Driver
IC
/REQ /ACK
KEY PANNEL
LCD
Mcro Controller (U1)
(U5)
(U10,U14)
POWER
MAIN
OPE
SCANNER
+30V
+5V
+12V
+3.3V
PAPER EXIT
SENSOR
(U4)
Motor
Driver
& Regul at or
(U13)
(U7)
ARM7TDM
MEM CNTR
Head Control I/F
SCAN CNTR
DERASTERIZER
UART 3
IEEE 1284
TIMERS
I/O PORT
INT. CNTR
USEB
DM 2
3-4
CIRCUIT DESCRIPTION
Samsung Electronics
Repair Manual
<Figure 3. Flash Memory Read Timing>
<Figure 4. Flash Memory Write Timing>
EXTCLK
nGCSx
nGCSx
ADDR
tRWD
tRAD
Tacs
tRCD
nWE
DATA
nBEx
Tacc
Toch
Tcah
Tocs
tRCD
tRWD
tRDD
tRAD
tRDH
’1’
EXTCLK
ADDR
nGCSx
nWE
nGCSx
nBEx
DATA
tRAD
tRCD
Tacs
tRWD
Tocs
tRWBED
Tcos
tRDD
Tacc
tRAD
tRCD
Tcah
tRWD
Toch
tRWBED
Toch
tRDD
3-5
Samsung Electronics
CIRCUIT DESCRIPTION
Repair Manual
<Figure 5. SDRAM Read Timing>
SCLK
SCKE
ADDR/BA
AP/A10
nGCSx
nSRAS
nSCAS
nBEx
nWE
DATA
1
tSAD
tSAD
tSCSD
tSRD
Trp Trcd
tSCD
tSBED
Tcl
tSWD
tSDS
tSDH
3-6
CIRCUIT DESCRIPTION
Samsung Electronics
Repair Manual
<Figure 6. SDRAM Write Timing>
SCLK
1
SCKE
ADDR/BA
AP/A10
nGCSx
nSRAS
nSCAS
nBEx
nWE
DATA
tSAD
tSAD
tSCSD
tSRD
Trp
Trcd
tSWD
tSDD
tSDD
tSBED
tSCD
3-7
Samsung Electronics
CIRCUIT DESCRIPTION
Repair Manual
<Figure 7. SDRAM Write Timing>
SCLK
SCKE
ADDR/BA
AP/A10
nGCSx
nSRAS
nSCAS
nBEx
nWE
DATA
tSAD
1
1
HZ
tSAD
tSCSD
tSRD tSRD
tSCD
tSWD
tSCSD
tSAD
Trp Trc
3-8
CIRCUIT DESCRIPTION
Samsung Electronics
Repair Manual
<Figure 8. SDRAM auto Refresh Timing>
SCLK
SCKE
ADDR/BA
AP/A10
nGCSx
nSRAS
nSCAS
nBEx
nWE
DATA
tSAD
1
1
HZ
tSAD
tSCSD
tSRD tSRD
tSCD
tSWD
tSCSD
tSAD
Trp Trc
3-9
Samsung Electronics
CIRCUIT DESCRIPTION
Repair Manual
<Figure 9. SDRAM Self Refresh Timing>
SCLK
SCKE
ADDR/BA
AP/A10
nGCSx
nSRAS
nSCAS
nBEx
nWE
DATA
HZ
tSWD
HZ
1
1
1
1
1
1
1
tCKED
tSAD
tSAD
tSCSD
tSRD tSRD
tSCD
tSCSD
tSAD
tCKED
Trc
Trp
3-10
CIRCUIT DESCRIPTION
Samsung Electronics
Repair Manual
Parameter Symbol Min T yp. Max Unit
ROM/SRAM Address Delay
t
RAD - 12 - ns
ROM/SRAM Chip select Delay
t
RCD - 11 - ns
ROM/SRAM Output enable Delay
t
ROD - 1 1 - ns
ROM/SRAM read Data Setup time
t
RDS - 1 - ns
ROM/SRAM read Data Hold time
t
RDH - 5 - ns
ROM/SRAM Byte Enable Dalay
t
RBED - 13 - ns
ROM/SRAM Write Byte Enable Delay
t
RWBED - 14 - ns
ROM/SRAM output Data Delay
t
RDD - 14 - ns
ROM/SRAM external Wait Setup time
t
WS - 1 - ns
ROM/SRAM external Wait Hold time
t
WH - 5 - ns
ROM/SRAM Write enable Delay
t
RWD - 14 - ns
DRAM Address Delay
t
DAD - 12 - ns
DRAM Row active Delay
t
DRD - 11 - ns
DRAM Read Column active Delay
t
DRCD - 1 1 - ns
DRAM Output enable Delay
t
DOD - 12 - ns
DRAM read Data Setup time
t
DDS - 1 - ns
DRAM read Data Hold time
t
DDH - 5 - ns
DRAM Write Cas active Delay
t
DWCD - 14 - ns
DRAM Cbr Cas active Delay
t
DCCD - 12 - ns
DRAM Write enable Delay
t
DWD - 13 - ns
DRAM output Data Delay
t
DDD - 14 - ns
SDRAM Address Delay
t
SAD - 4 - ns
SDRAM Chip Select Delay
t
SCSD - 4 - ns
SDRAM Row active Delay
t
SRD - 4 - ns
SDRAM Column active Delay
t
SCD - 4 - ns
SDRAM Byte Enable Delay
t
SBED - 5 - ns
SDRAM Write enable Delay
t
SWD - 5 - ns
SDRAM read Data Setup time
t
SDS - 4 - ns
SDRAM read Data Hold time
t
SDH - 0 - ns
SDRAM output Data Delay
t
SDD - 8 - ns
SDRAM Clock Eable Delay
t
CKED - 5 - ns
< ROM/SRAM Bus Timing Constants >
(V
DDP
: 3.3V, V
DDI
: 2.5V, Ta =25˚C, PLCAP=70pf, Max/Min=typ. ±30%)
3-11
Samsung Electronics
CIRCUIT DESCRIPTION
Repair Manual
3-3-2-3 EXTERNAL DMA part
The function of this part is to bring data from external DEVICE(OASIS:U21) by using GENERAL DMA. If DMA REQUEST(/IP_REQ) is sent from external DEVICE to S3C46MOX(JUPITER3:U15), DMA ACKNOWLEDGE SIGNAL(/IP_ACK) is activated and the GENERAL DMAis driven, so READ STROBE(/RD) in the external DEVICE to bring data from the external DEVICE requiring CHANNEL. To transfer this DATAto the DESTINATION MEMOR Y, the ADDRESS of the DESTINATION MEMORY, CHIP SELECT and WRITE STROBE(/WR) are generated to store.
That is, if the EXTERNAL DMAis required by the external DEVICE, S3C46MOX(Jupiter3:U15) responds to drive the inside DMA CONTROLLER and then allocate GENERAL DMA to external CHANNEL so that the data may be trans­ferred to MEMORY TO MEMORY or external DEVICE TO MEMORY.
For more details, see the circuit description, see the circuit description part of IMAGE PROCESSOR (5.3).
3-3-2-4 DRAM control part
Since S3C46MOX(Jupiter3) has the DRAM CON­TROLLER build-in, it may be used by connecting DRAM with external memory.
The Control mode of DRAM CONTROLLER provided by S3C46MOX(Jupiter3) is available for EARLY WRITE, NORMAL READ, PAGE MODE, and BYTE/HALF WORD ACCESS, and is supported even by EDO DRAM,and SDRAM as well as, Fast page DRAM.
This system uses SDRAM, and the signal used for READ/WRITE uses /RD,/WR signal used for SYSTEM BUS CONTROL. It is supported with auto REFRESH and also by the Self-refresh mode for DRAM
BACK UP. It con-
sists of 2 Banks connected to co
mmon /SCS[1:0], /SCAS, /SRAS, /SCLK, /SCKE, /DQM[1:0], each of them may use up to 2M ~ 32M HALF WORD.
In this system, 2 MB is applied as system memory. The area of DRAM is specified in the DRAM MEMORY MAP of Fig. 1, while the related TIMING DIAGRAM in Fig. 5, 6, 7, 8, 9.
3-3-2-5 RTC (REAL TIME CLOCK) part
The RTC related circuit part is not applied because the fax function is not applied, in this system.
3-3-2-6 P ARALLELPORT INTERFACE division
S3C46MOX(Jupiter3) has the Parallel Port Interface part enabling Parallel Interface with PC. This part is connected to PC through Centronics Connector in this system, which consists of /ERROR, PE, BUSY, /ACK, SLCT, /INIT, /SLCTIN, /AUTOFD, /STB and 245DIR as the part generating the main control signal used to drive PARALLEL COMMUNICATION. Data transmission method between this part and PC supports the method specified in P1284 Parallel Port Standard (http://www.fapo.com/ieee1284.html) of IEEE. That is, the Compatibility mode, the fundamental transmis­sion method of print data, supports the Nibble Mode(4bits data) supporting the Data Uploading to PC, Byte Mode(8bits data), and ECP(Enhanced Capabilities Port : 8 bits data transmission & receiving) supporting two-way high speed transmission to PC. The Compatibility mode and ECP mode may be simply explained as follows. The Compatibility mode is generally called Centronics mode and is the protocol used for transmitting data by most of PC. The ECP mode provides two-way high speed com­munication as the protocol suggested for improved com­munication with peripheral equipments such as printer and scanner. The ECP mode provides two types of cycles in two-way transmission. They are data and command cycles. Command cycle again has Run-length count and Channel addressing types. First, RLE (Run Length Encoding) type, having 64-fold compressibility , is available for the real time data compres­sion, and is used usefully for printer and scanner, which have to transmit large capacity of raster image having a series of same data. Next, Channel Addressing is pro­posed for addressing single structure of multi-device. For example, although the printer channel is processing the printer image when the fax/printer/scanner have one structure like this system, they may use parallel port for another use. This system does not apply to the parallel port Interface.
3-12
CIRCUIT DESCRIPTION
Samsung Electronics
Repair Manual
<Figure 10. Compatibility Hardware Handshaking Timing>
1. Write the data to the data register.
2. Program reads the status register to check that the printer is not BUSY.
3. If not BUSY, then Write to the Control Register to assert the STROBE line.
4. Write to the Control register to de-assert the STROBE line.
<Figure 10-1. ECP Hardware Handshaking Timing (forward)>
1. The host places data on the data lines and indicates a data cycle by setting nAUTOFD.
2. Host asserts nSTROBE low to indicate valid data.
3. Peripheral acknowledges host by setting BUSY high.
4. Host sets nSTROBE high. This is the edge that should be used to clock the data into the Peripheral.
5. Peripheral sets BUSY low to indicate that it is ready for the next BYTES.
6. The cycle repeats, but this time it is a command cycle because nAUTOFD is low.
BYTE 0 BYTE 1
3-13
Samsung Electronics
CIRCUIT DESCRIPTION
Repair Manual
<Figure 10-2. ECP Hardware Handshaking Timing (reverse)>
1. The host request a reverse channel transfer by setting nINIT low.
2. The peripheral signals that it is OK to proceed by setting PE low.
3. The peripheral places data on the data lines and indicates a data cycle by setting BUSY high.
4. Peripheral asserts nACK low to indicate valid data.
5. Host acknowledges by setting nAUTOFD high.
6. Peipheral sets nACK high. This is the edge that should be used to clock the data into the host.
7. Host sets nAUTOFD low to indicate that it is ready for the next BYTES.
8. The cycle repeats, but this time it is a command cycle because BUSY is low.
BYTE 0 BYTE 1
Loading...
+ 37 hidden pages