SAMSUNG S2450TH, S2400 Alignment and Adjustments

Samsung Electronics 10-1

IC Internal Diagram

10. IC Internal Diagram

10-1 74HCT245 ; AUIC4

TLF5366

MM74HCT245 Octal TRI-STATE Transceiver

August 1996

MM74HCT245
Octal TRI-STATE



Transceiver

General Description

This TRI-STATE bi-directional buffer utilizes advanced sili­con-gate CMOS technology and is intended for two-way
asynchronous communication between data buses It has
high drive current outputs which enable high speed opera­tion even when driving large bus capacitances This circuit
possesses the low power consumption of CMOS circuitry
yet has speeds comparable to low power Schottky TTL cir­cuits

This device is TTL input compatible and can drive up to 15
LS-TTL loads and all inputs are protected from damage due
to static discharge by diodes to V

CC

and ground

The MM74HCT245 has one active low enable input (G) and
a direction control (DIR) When the DIR input is high data
flows from the A inputs to the B outputs When DIR is low
data flows from B to A

MM74HCT devices are intended to interface between TTL
and NMOS components and standard CMOS devices
These parts are also plug-in replacements for LS-TTL devic­es and can be used to reduce power consumption in exist­ing designs

Features

Y

TTL input compatible

Y

TRI-STATE outputs for connection to system busses

Y

High output drive current 6 mA (min)

Y

High speed 16 ns typical propagation delay

Y

Low power 80 mA (74HCT Series)

Connection Diagram

Dual-In-Line Package

TLF5366– 1

Top View

Order Number MM74HCT245

Truth Table

Control

Operation

Inputs

G DIR 245

L L B data to A bus

L H A data to B bus

H X isolation

Hehigh level Lelow level Xeirrelevant

TRI-STATEis a registered trademark of National Semiconductor Corp

C

1996 National Semiconductor Corporation RRD-B30M86Printed in U S A

httpwwwnationalcom

10-2 Samsung Electronics

IC Internal Diagram

Absolute Maximum Ratings (Notes12)

If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications

Supply Voltage (V

CC

)

b

05 toa70V

DC Input Voltage (V

IN

)

b

15 to V

CC

a

15V

DC Output Voltage (V

OUT

)

b

05 to V

CC

a

05V

Clamp Diode Current (IIKIOK)

g

20 mA

DC Output Current per pin (I

OUT

)

g

35 mA

DC V

CC

or GND Current per pin (ICC)

g

70 mA

Storage Temperature Range (T

STG

)

b

65Ctoa150C

Power Dissipation (PD)

(Note 3) 600 mW
SO Package only 500 mW

Lead Temperature (T

L

)

(Soldering 10 seconds) 260



C

Operating Conditions

Min Max Units

Supply Voltage (V

CC

) 45 55 V

DC Input or Output Voltage 0 V

CC

V

(V

INVOUT

)

Operating Temp Range (T

A

)

MM74HCT

b

40

a

85



C

Input Rise or Fall Times

(t

rtf

) 500 ns

DC Electrical Characteristics (V

CC

e

5Vg10% unless otherwise specified)

T

A

e

25C

74HCT

T

A

e

125C

Symbol Parameter Conditions

T

A

eb

40 to 85C

Units

Typ Guaranteed Limits

V

IH

Minimum High Level 20 20 20 V
Input Voltage

V

IL

Maximum Low Level 08 08 08 V
Input Voltage

V

OH

Minimum High Level V

IN

e

VIHor V

IL

Output Voltage

l

I

OUT

l

e

20 mAV

CCVCC

b

01 V

CC

b

01 V

CC

b

01 V

l

I

OUT

l

e

60 mA V

CC

e

45V 42 398 384 37 V

l

I

OUT

l

e

72 mA V

CC

e

55V 52 498 484 47 V

V

OL

Maximum Low Level V

IN

e

VIHor V

IL

Voltage

l

I

OUT

l

e

20 mA 0 01 01 01 V

l

I

OUT

l

e

60 mA V

CC

e

45V 02 026 033 04 V

l

I

OUT

l

e

72 mA V

CC

e

55V 02 026 033 04 V

I

IN

Maximum Input V

IN

e

VCCor GND

g

01

g

10

g

10 mA

Current VIHor VILPin1or19

I

OZ

Maximum TRI-STATE V

OUT

e

VCCor GND

g

05

g

50

g

10 mA

Output Leakage G

e

V

IH

Current

I

CC

Maximum Quiescent V

IN

e

VCCor GND 8 80 160 mA

Supply Current I

OUT

e

0 mA

V

IN

e

24V or 05V (Note 4) 06 10 13 15 mA

Note 1 Absolute Maximum Ratings are those values beyond which damage to the device may occur

Note 2 Unless otherwise specified all voltages are referenced to ground

Note 3 Power Dissipation temperature derating  plastic ‘‘N’’ package

b

12 mWC from 65Cto85C

Note 4 Measured per input All other inputs at V

CC

or ground

Samsung Electronics 10-3

IC Internal Diagram

AC Electrical Characteristics MM74HCT245

V

CC

e

50V t

r

e

t

f

e

6 ns T

A

e

25C (unless otherwise specified)

Symbol Parameter Conditions Typ

Guaranteed

Units

Limit

t

PHLtPLH

Maximum Output C

L

e

45 pF 16 20 ns

Propagation Delay

t

PZLtPZH

Maximum Output C

L

e

45 pF 29 40 ns

Enable Time R

L

e

1kX

t

PLZtPHZ

Maximum Output C

L

e

5pF 20 25 ns

Disable Time R

L

e

1kX

AC Electrical Characteristics MM74HCT245

V

CC

e

50Vg10% t

r

e

t

f

e

6 ns (unless otherwise specified)

T

A

e

25C

74HCT

T

A

e

125C

Symbol Parameter Conditions

T

A

eb

40 to 85C

Units

Typ Guaranteed Limits

t

PHLtPLH

Maximum Output C

L

e

50 pF 17 23 29 34 ns

Propagation Delay

C

L

e

150 pF 24 30 38 45 ns

t

PZL

Maximum Output R

L

e

1kX

31 42 53 63 ns

Enable Time C

L

e

50 pF

t

PZH

Maximum Output R

L

e

1kX

23 33 41 49 ns

Enable Time C

L

e

50 pF

t

PHZtPLZ

Maximum Output R

L

e

1kX 21 30 38 45 ns

Disable Time C

L

e

50 pF

t

THLtTLH

Maximum Output C

L

e

50 pF 8 12 15 18 ns

Rise and Fall Time

C

IN

Maximum Input 10 15 15 15 pF
Capacitance

C

OUT

Maximum OutputInput 20 25 25 25 pF
Capacitance

C

PD

Power Dissipation (Note 5) GeV

CC

7pF

Capacitance GND G

e

100 pF

Note 5 CPDdetermines the no load power consumption P

D

e

CPDV

CC

2

faICCVCC and the no load dynamic current consumption I

S

e

CPDVCCfaICC

httpwwwnationalcom3

10-4 Samsung Electronics

IC Internal Diagram

10-2 BA3121N ; AUIC2

Audio ICs

Ground isolation amplifier

BA3121 / BA3121F / BA3121N

The BA3121,BA3121F and BA3121N are ground isolation amplifiers developed for use in car audio applications. These
ICs efficiently eliminate problems caused by wiring resistance, and remove noise generated by the electrical devices
used in automobiles. The capacitance values of the external capacitors required for the ICs are small to allow compact
and reliable set design.

FApplications
Car audio systems

FFeatures

1) Large capacitors not required

2) High common-mode rejection ratio
(57dB typ. at f = 1kHz).

3) Low noise (V

NO = 3.5µVrms Typ.).

4) Low distortion (THD = 0.002% Typ.).

5) Two channels.

FAbsolute maximum ratings (Ta = 25_C)

FRecommended operating conditions (Ta = 25_C)

Samsung Electronics 10-5

IC Internal Diagram

Audio ICs BA3121 / BA3121F / BA3121N

FBlock diagrams

10-6 Samsung Electronics

IC Internal Diagram

Audio ICs BA3121 / BA3121F / BA3121N

FElectrical characteristics (unless otherwise noted, Ta = 25_C, VCC = 12V, f = 1kHz, Rg = 1.8kΩ)

Samsung Electronics 10-7

IC Internal Diagram

10-3 BQ2002 ; BIC1

Features

➤

Fast charge of nickel cadmium
or nickel-metal hydride batter

-

ies

➤

Direct LED output displays
charge status

➤

Fast-charge termination by -∆V,
maximum voltage, maximum
temperature, and maximum
time

➤

Internal band-gap voltage ref

-

erence

➤ Optional top-off charge

➤ Selectable pulse trickle charge

rates

➤ Low-power mode

➤ 8-pin 300-mil DIP or 150-mil

SOIC

General Description

The bq2002 and bq2002/F Fast-Charge
ICs are low-cost CMOS battery-charge
controllers providing reliable charge
termination for both NiCd and NiMH
battery applications. Controlling a
current-limited or constant-current
supply allows the bq2002/F to be the
basis for a cost-effective stand-alone or
system-integrated charger. The
bq2002/F integrates fast charge with
optional top-off and pulsed-trickle con

­trol in a single IC for charging one or
more NiCd or NiMH battery cells.

Fast charge is initiated on application
of the charging supply or battery re­placement. For safety, fast charge is
inhibited if the battery temperature
and voltage are outside configured
limits.

Fast charge is terminated by any of
the following:

n

Peak voltage detection (PVD)

n

Negative delta voltage (-∆V)

n

Maximum voltage

n

Maximum temperature

n

Maximum time

After fast charge, the bq2002/F op

­tionally tops-off and pulse-trickles the
battery per the pre-configured limits.
Fast charge may be inhibited using
the INH pin. The bq2002/F may also
be placed in low-standby-power mode
to reduce system power consumption.

The bq2002F differs from the
bq2002 only in that a slightly differ­ent set of fast-charge and top-off
time limits is available. All differ­ences between the two ICs are illus­trated in Table 1.

NiCd/NiMH Fast-Charge Management ICs

bq2002/F

TM Timer mode select input

LED

Charging status output

BAT Battery voltage input

V

SS

System ground

1

PN-200201.eps

8-Pin DIP or

Narrow SOIC

2

3

4

8

7

6

5

TM

LED

BAT

V

SS

CC

INH

V

CC

TS

TS Temperature sense input

V

CC

Supply voltage input

INH Charge inhibit input

CC Charge control output

Pin Connections

Pin Names

bq2002/F Selection Guide

Part No. TCO HTF LTF

-∆V

PVD Fast Charge t

MTO

Top-Off Maintenance

bq2002

0.5 ∗ V

CC

None None

✔ C/2 160 C/32 C/64
✔ 1C 80 C/16 C/64

✔ 2C 40 None C/32

bq2002F

0.5 ∗ V

CC

None None

✔ C/2 160 C/32 C/64
✔ 1C 100 C/16 C/64

✔ 2C 55 None C/32

SLUS131–JANUARY 1999 D