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Brochure
Samsung SSD
PM863 and SM863
for Data Centers
Groundbreaking SSDs that raise the bar on satisfying big data demands
© 2015 Samsung Electronics Co.
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Brochure
An enormous increase in Internet traffic and data volume is
challenging data centers
Keep ahead of ever-increasing data demands
The rapid increase in Internet traffic has placed huge demands
on data centers, spurred on by businesses and consumers alike.
To stay abreast of the enormous volumes, velocity and varieties
of data, data centers are turning to faster-performing SSDs to
meet customer demand. As much of the huge daily volume of
this data is unstructured, there is also an increasing need for big
data analysis to help improve operational efficiency and provide
better service. In order to handle these extremely large data sets
and perform big data analytics efficiently, SSDs are needed to
accomplish the ultrafast processing required.
Satisfy big data demands with SSDs optimized
for 24/7 data center use
The Samsung 863 Series satisfy these big data requirements
with two innovative SSDs, the PM863 and the SM863. Each
is specially engineered for specific applications. The PM863,
engineered for mixed workload data centers, boasts highperformance random read/write (R/W) workloads, such as
Content Delivery Networks (CDNs), streaming and web servers.
On the other hand, the SM863 is optimized for write-intensive
applications, such as Online Transaction Processing (OLTP) and
email and database servers, able to process massive amounts of
information with high efficiency.
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Maintain consistent performance with low latency
Choose the SSD that suits specific workload
requirements
With the rise of personal, mobile, social and cloud computing,
real-time response is essential. These changing environments
are leading data centers to turn to SSDs in order to handle their
big data demands. Some data centers process write-intensive
workloads while others handle mixed workloads. Therefore,
selecting the correct SSD for the task at hand is vitally important,
and Samsung offers both.
Both the Samsung PM863 and SM863 SSD outclass other
products in terms of IOPS consistency, latency and quality of
service (QoS).
PM863 - Ideal for mixed workloads
The PM863 SSD delivers high random IOPS,
lower latency, higher reliability and reduced
Total Cost of Ownership (TCO) under mixed
workloads. Ideal for CDNs, streaming and web
servers, the PM863 maintains an IOPS consistency level of 90
percent or higher under virtually any write ratio conditions, based
on internal tests.* Its constant and equal response time makes the
PM863 an excellent choice for environments that must comply
with a Service Level Agreement (SLA), such as cloud services.
* Internal tests were conducted with PM863 960 GB.
120 GB 240 GB 480 GB 960 GB 1,920 GB 3,840 GB
Sequential Read
(128 KB, MB/s)
Sequential Write
(128 KB, MB/s)
Random Read
(4 KB, IOPS)
Random Write
(4 KB, IOPS)
Table 1. Sequential R/W and sustained random R/W performance of the PM863
380 520 525 520 510 540
125 245 460 475 475 480
86K 99K 99K 99K 99K 99K
5K 10K 17K 18K 18K 18K
SM863 - Ideal for write-intensive workloads
With its high-level performance, endurance,
security and power efficiency, the SM863
SSD is the ideal choice for OLTP and email
and database servers. The SM863 delivers
exceptional sequential R/W speeds of up to 520/485 MB/s
and 4 KB random R/W IOPS of up to 97K/29K. Its extremely
low latency and high level of QoS provide fast processing and
analysis of massive amounts of information in demanding data
center environments.
120 GB 240 GB 480 GB 960 GB 1,920 GB
Sequential Read
(128 KB, MB/s)
Sequential Write
(128 KB, MB/s)
Random Read
(8 KB, IOPS)
Random Write
(8 KB, IOPS)
Random Read
(4 KB, IOPS)
Random Write
(4 KB, IOPS)
Table 3. Sequential R/W and sustained random R/W performance of the SM863
Random Read (4 KB) 99% 99% 99% 99% 99%
Random Write (4 KB) 93% 97% 97% 97% 97%
Table 4. IOPS consistency of the SM863
NOTE:
1. IOPS consistency measured using Fio® with queue depth 32.
2. IOPS consistency (%) = (99.9% IOPS) / (Average IOPS) x 100
500 520 520 520 520
460 485 485 485 485
57K 57K 57K 57K 57K
6K 10K 13K 14K 14K
97K 97K 97K 97K 97K
12K 20K 26K 28K 29K
120 GB 240 GB 480 GB 960 GB 1,920 GB
1,2
120 GB 240 GB 480 GB 960 GB 1,920 GB 3,840 GB
Random Read
(4 KB)
Random Write
(4 KB)
Table 2. IOPS consistency of the PM863
NOTE:
1. IOPS consistency measured using Fio® with queue depth 32.
2. IOPS consistency (%) = (99.9% IOPS) / (Average IOPS) x 100
98% 98% 98% 98% 98% 99%
94% 94% 94% 94% 90% 95%
1,2
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Trust the leader of memory technology to deliver solid and
reliable service for your data centers
Safeguard priceless data with robust Samsung
features
V-NAND Technology
Equipped with the innovative Samsung V-NAND architecture, the
PM863 and SM863 help sustain data center performance 24/7,
365 days a year by providing higher endurance than planar NAND.
Enhanced Data Integrity
Both the PM863 and SM863 prevent data corruption and secure
data integrity. End-to-end protection ensures output data remains
consistent with input data along the entire data transfer path from
the host interface to the NAND flash memory without error. Using
the Error Correcting Code (ECC) engine, it detects and remedies
signal discrepancies in real time. Power-loss Protection using builtin tantalum capacitors guards against data corruption and loss in
the write cache in the event of power failures.
Dynamic Thermal Guard
The Dynamic Thermal Guard algorithm monitors the
temperature of the SSD by throttling back the performance in
order to prevent thermal shutdown.
Self-Encrypting Drive*
The SM863 ensures data protection with the Samsung AES 256bit, hardware-based Self-Encrypting Drive (SED). Data is secured
with significantly less performance degradation, resulting in
better performance, security and manageability.
* This only applies to SM863.
Lower TCO* without sacrificing performance
The PM863 and the SM863 boast better performance-power
ratio than mechanical drives. This power-efficiency reduces the
operating costs of data centers.
The NAND flash-based PM863 and SM863 provide high
reliability, guaranteed with 2 Million Mean Time Between Failure
(MTBF) and the Total Bytes Written (TBW) found in Table 5 and 6.
120 GB 240 GB 480 GB 960 GB 1,920 GB 3,840 GB
1
TBW
MTBF
Table 5. TBW and MTBF of PM863
TBW
MTBF
Table 6. TBW and MTBF of SM863
NOTE:
1. TBW is measured while running 100% random 4 KB writes across the entire SSD.
2. MTBF is Mean Time Between Failure. As same word, annual failure ratio is 0.438%.
Both the PM863 and SM863 use the same 2.5-inch SATA
interface, eliminating the need to change the existing
infrastructure when converting to a Samsung SSD, further
saving TCO. In addition, the PM863 is available in capacity
options up to 3,840 GB, which can also save server space.
* The TCO results can vary depending upon the application and the conditions
of the contract.
170 TB 350 TB 700 TB 1,400 TB 2,800 TB 5,600 TB
2
120 GB 240 GB 480 GB 960 GB 1,920 GB
1
770 TB 1,540 TB 3,080 TB 6,160 TB 12,320 TB
2
2,000,000 Hours
2,000,000 Hours
Rely on a global leader in cutting-edge
SSD technology
Samsung is a leading SSD provider that designs and integrates all
the crucial components of the SSDs in house: the DRAM, NAND
flash, controller and firmware. As the global leader in innovative
V-NAND technology, and with intimate knowledge of every
component and part of the SSD, Samsung can fine-tune each
element at every stage of development to ensure perfect synergy.
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PM863 Technical Specifications
MZ-7LM120Z MZ-7LM240Z MZ-7LM480Z MZ-7LM960Z MZ-7LM1T9Z MZ-7LM3T8Z
Application
Capacity
1
120 GB 240 GB 480 GB 960 GB 1,920 GB 3,840 GB
Form Factor 2.5" Type
Interface SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Dimension (WxHxD) Max. 100.2 x 69.85 x 6.8 (mm)
Weight Max. 60 g
NAND Type Samsung 32 layer V-NAND
Controller Samsung 7th Generation SATA 6 Gbps Controller for Data Center
Sequential Read (128 KB) Up to 380 MB/sec Up to 520 MB/sec Up to 525 MB/sec Up to 520 MB/sec Up to 510 MB/sec Up to 540 MB/sec
Sequential Write (128 KB) Up to 125 MB/sec Up to 245 MB/sec Up to 460 MB/sec Up to 475 MB/sec Up to 475 MB/sec Up to 480 MB/sec
Performance
2
Random Read (4 KB, QD32) Up to 86,000 IOPS Up to 99,000 IOPS Up to 99,000 IOPS Up to 99,000 IOPS Up to 99,000 IOPS Up to 99,000 IOPS
Data Center
Random Write (4 KB, QD32) Up to 5,000 IOPS Up to 10,000 IOPS Up to 17,000 IOPS Up to 18,000 IOPS Up to 18,000 IOPS Up to 18,000 IOPS
3
Average Power Consumption
(system level)
Active Read / Write: Up to 3.0 Watt / 4.1 Watt, Idle : 1.3 Watt
Allowable Voltage 5.0 V ± 5%
Reliability (MTBF) 2,000,000 Hours
Operating Temperature 0 - 70°C
Shock 1,500 G & 0.5 ms
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TBW
1. 1 GB = 1 Billion bytes by IDEMA. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise).
2. Actual performance may vary depending on use conditions and environment.
1) Performance measured using IOMeter 2006 with queue depth 32, C216 Intel® SATA 6G port.
2) Measurements are performed on whole LBA range.
3) Write cache enabled.
4) 1 MB/sec = 1,048,576 bytes/sec was used in sequential performance.
3. Actual power consumption may vary depending on system hardware & configuration. Active write power is measured on 128 KB sequential write and active read power is measured on
4 KB random read.
4. TBW is measured while running 100% random 4 KB writes across the entire SSD.
170 TB 350 TB 700 TB 1,400 TB 2,800 TB 5,600 TB
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SM863 Technical Specifications
MZ-7KM120Z MZ-7KM240Z MZ-7KM480Z MZ-7KM960Z MZ-7KM1T9Z
Application
1
Capacity
Form Factor 2.5" Type
Interface SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Dimension (WxHxD) Max. 100.2 x 69.85 x 6.8 (mm)
Weight Max. 60 g
NAND Type Samsung 32 layer V-NAND
Controller Samsung 7th Generation SATA 6 Gbps Controller for Data Center
Encryption Support AES 256-bit
Sequential Read (128 KB) Up to 500 MB/sec Up to 520 MB/sec Up to 520 MB/sec Up to 520 MB/sec Up to 520 MB/sec
120 GB 240 GB 480 GB 960 GB 1,920 GB
Data Center
Sequential Write (128 KB) Up to 460 MB/sec Up to 485 MB/sec Up to 485 MB/sec Up to 485 MB/sec Up to 485 MB/sec
Performance
Average Power Consumption
Allowable Voltage 5.0 V ± 5%
Reliability (MTBF) 2,000,000 Hours
Operating Temperature 0 - 70°C
Shock 1,500 G & 0.5 ms
TBW
1. 1 GB = 1 Billion bytes by IDEMA. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise).
2. Actual performance may vary depending on use conditions and environment.
1) Performance measured using IOMeter 2006 with queue depth 32, C216 Intel® SATA 6G port.
2) Measurements are performed on whole LBA range.
3) Write cache enabled.
4) 1 MB/sec = 1,048,576 bytes/sec was used in sequential performance.
3. Actual power consumption may vary depending on system hardware & configuration. Active write power is measured on 128 KB sequential write and
active read power is measured on 4 KB random read.
4. TBW is measured while running 100% random 4 KB writes across the entire SSD.
2
Random Read (4 KB, QD32) Up to 97,000 IOPS Up to 97,000 IOPS Up to 97,000 IOPS Up to 97,000 IOPS Up to 97,000 IOPS
Random Write (4 KB, QD32) Up to 12,000 IOPS Up to 20,000 IOPS Up to 26,000 IOPS Up to 28,000 IOPS Up to 29,000 IOPS
3
(system level) Active Read / Write: Up to 2.4 Watt / 3.1 Watt, Idle : 1.3 Watt
4
770 TB 1,540 TB 3,080 TB 6,160 TB 12,320 TB
Legal and additional information
About Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. inspires the world and shapes the future with transformative ideas and technologies, redefining the worlds of TVs, smartphones,
wearable devices, tablets, cameras, digital appliances, printers, medical equipment, network systems, and semiconductor and LED solutions. We are also leading in
the Internet of Things space through, among others, our Smart Home and Digital Health initiatives. We employ 319,000 people across 84 countries with annual sales
of US $196 billion. To discover more, please visit our official website at www.samsung.com and our official blog at global.samsungtomorrow.com
For more information
For more information about the Samsung 863 Series, visit www.samsung.com/ssd or www.samsung.com/samsungssd.
Copyright © 2015 Samsung Electronics Co., Ltd. All rights reserved. Samsung is a registered trademark of Samsung Electronics Co., Ltd. Specifications and designs are
subject to change without notice. Nonmetric weights and measurements are approximate. All data were deemed correct at time of creation. Samsung is not liable for
errors or omissions. All brand, product, service names and logos are trademarks and/or registered trademarks of their respective owners and are hereby recognized and
acknowledged. Fio is a registered trademark of Fio Corporation. Intel is a trademark of Intel Corporation in the U.S. and/or other countries.
Samsung Electronics Co., Ltd. 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16677, Korea www.samsung.com
2015-10
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