INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
MuxOneNAND‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be
This specification contains information about the Samsung Electronics Company MuxOneNAND‚ Flash memory product family. Section 1.0
includes a general overview, revision history, and product ordering information.
Section 2.0 describes the MuxOneNAND device. Section 3.0 provides information about device operation. Electrical specifications and tim-
ing waveforms are in Sections 4.0 through 6.0. Section 7.0 provides additional application and technical notes pertaining to use of the MuxOneNAND. Package dimensions are found in Section 8.0
Samsung offers a variety of Flash solutions including NAND Flash, MuxOneNAND and NOR Flash. Samsung offers Flash products both
component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia.
To determine which Samsung Flash product solution is best for your application, refer the product selector chart.
Product Line designator
B : Include Bad Block
D : Daisy Sample
Operating Temperature Range
E : Extended Temp. (-30 C to 85 C)
Package
D : FBGA(Lead Free)
Version
A : 2nd Generation
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
Page Architecture
2 : 2KB Page
1.3 Architectural Benefits
MuxOneNAND is a highly integrated non-volatile memory solution based around a NAND Flash memory array.
The chip integrates system features including:
A BootRAM and bootloader
Two independent bi-directional 2KB DataRAM buffers
A High-Speed x16 Host Interface
On-chip Error Correction
On-chip NOR interface controller
This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications that
would otherwise have to use more NOR components.
MuxOneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with the synchronous read performance of NOR. The NOR Flash host interface makes MuxOneNAND an ideal solution for applications like G3 Smart
Phones, Camera Phones, and mobile applications that have large, advanced multimedia applications and operating systems, but lack a
NAND controller.
When integrated into a Samsung Multi-Chip-Package with Samsung Mobile DDR SDRAM, designers can complete a high-performance,
small footprint solution.
- Data retention 10year after 10K Program/Erase Cycles
- Data retention 1year after 100K Program/Erase Cycles
System Hardware
Voltage detector generating internal reset signal from Vcc
Hardware reset input (RP
Data Protection Modes
User-controlled One Time Programmable(OTP) area
Internal 2bit EDC / 1bit ECC
Internal Bootloader supports Booting Solution in system
Handshaking Feature
Detailed chip information
Packaging
2G products 4G DDP products
)
- Write Protection for BootRAM
- Write Protection for NAND Flash Array
- Write Protection during power-up
- Write Protection during power-down
- INT pin indicates Ready / Busy
- Polling the interrupt register status bit
- by ID register
63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA
63ball, 10mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA
MuxOneNAND‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes control logic, a
NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot code buffering (BootRAM) and 4KB for data buffering (DataRAM), split between 2 independent buffers. It has a x16 Host Interface and a random access time speed of ~76ns.
The device operates up to a maximum host-driven clock frequency of 66MHz / 83MHz for synchronous reads at Vcc(or Vccq. Refer to chapter
4.2) with minimum 4-clock (66MHz) / 6-clock (83MHz) latency. Below 40MHz it is accessible with minimum 3-clock latency. Appropriate wait
cycles are determined by programmable read latency.
MuxOneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector counter
register. The device includes one block-sized OTP (One Time Programmable) area and user-controlled 1st block OTP(Block 0) that can be
used to increase system security or to provide identification capabilities.
FLASH MEMORY
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to
change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
The MuxOneNAND is an advanced generation, high-performance NAND-based Flash memory.
It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for
the Flash array, and a one-time-programmable block.
The combination of these memory areas enable high-speed pipelining of reads from host
Clock speeds up to 66MHz / 83MHz with a x16 wide I/O yields a 108MByte/second bandwidth.
The MuxOneNAND also includes a Boot RAM and boot loader. This enables the device to efficiently load boot code at device startup from the
NAND Array without the need for off-chip boot device.
One block of the NAND Array is set aside as an OTP memory area, and 1st Block (Block 0) can be used as OTP area. This area, available to
the user, can be configured and locked with secured user information.
On-chip controller interfaces enable the device to operate in systems without NAND Host controllers.
BufferRAM Page Bufferand NAND Flash Array.
2.2 Definitions
B (capital letter)Byte, 8bits
W (capital letter)Word, 16bits
b (lower-case letter)Bit
ECCError Correction Code
Calculated ECCECC that has been calculated during a load or program access
Written ECCECC that has been stored as data in the NAND Flash array or in the BufferRAM
BufferRAMOn-chip internal buffer consisting of BootRAM and DataRAM
BootRAMA 1KB portion of the BufferRAM reserved for Boot Code buffering
DataRAMA 4KB portion of the BufferRAM reserved for Data buffering
Sector
Data unit
Part of a Page of which 512B is the main data area and 16B is the spare data area.
It is also the minimum Load/Program/Copy-Back Program unit
during a 1~4 sector operation is available.
Possible data unit to be read from memory to BufferRAM or to be programmed to memory.
- 528B of which 512B is in main area and 16B in spare area
- 1056B of which 1024B is in main area and 32B in spare area
- 1584B of which 1536B is in main area and 48B in spare area
- 2112B of which 2048B is in main area and 64B in spare area
- Inputs for addresses during read operation, which are for addressing BufferRAM & Register.
ADQ15~ADQ0I/O
INTO
RDYO
CLKI
WE
AVDI
RP
CE
OE
Power Supply
CC-Core
V
/ Vcc
V
CC-IO
/ Vccq
V
SSGround for MuxOneNAND
etc.
DNU
NC
NOTE :
Do not leave power supply(Vcc-Core/Vcc-IO, V
- Inputs data during program and commands for all operations, outputs data during memory array/
register read cycles.
Data pins float to high-impedance when the chip is deselected or outputs are disabled.
Interrupt
Notifies the Host when a command is completed. After power-up, it is at hi-z condition. Once IOBE is set to 1,
it does not float to hi-z condition even when CE
when reset(Warm, Hot, NAND Flash Core) command and ‘2X program’ command(007Dh) issued, it operates
as open drain output with internal resistor (~50Kohm).
Ready
Indicates data valid in synchronous read modes and is activated while CE
RDY pin may not be used in Non-Handshaking Mode. (Refer to Chapter 7.1)
Clock
CLK synchronizes the device to the system bus frequency in synchronous read mode.
The first rising edge of CLK in conjunction with AVD
Write Enable
I
WE
controls writes to the bufferRAM and registers. Data is latched on the WE pulse’s rising edge
Address Valid Detect
Indicates valid address presence on address inputs. During asynchronous read operation, all addresses are
The MuxOneNAND architecture integrates several memory areas on a single chip.
2.6.1 Internal (NAND Array) Memory Organization
The on-chip internal memory is a single-level-cell (SLC) NAND array used for data storage and code. The internal memory is divided into a
main area and a spare area.
Main Area
The main area is the primary memory array. This main area is divided into Blocks of 64 Pages. Within a Block, each Page is 2KB and is comprised of 4 Sectors. Within a Page, each Sector is 512B and is comprised of 256 Words.
Spare Area
The spare area is used for invalid block information and ECC storage. Spare area internal memory is associated with corresponding main area
memory. Within a Block, each Page has four 16B Sectors of spare area. Each spare area Sector is 8 words.
The on-chip external memory is comprised of 3 buffers used for Boot Code storage and data buffering.
The BootRAM is a 1KB buffer that receives Boot Code from the internal memory and makes it available to the host at start up.
There are two independent 2KB bi-directional data buffers, DataRAM0 and DataRAM1. These dual buffers enable the host to execute simultaneous Read-While load, and Write-While-program operations after Boot Up. During Boot Up, the BootRam is used by the host to initialize
the main memory, and deliver boot code from NAND Flash core to host.
FLASH MEMORY
External (BufferRAM)
Memory
BootRAM (1KB)
Host
DataRAM0 (2KB)
DataRAM1 (2KB)
The external memory is divided into a main area and a spare area. Each buffer is the equivalent size of a Sector.
The main area data is 512B. The spare area data is 16B.
Spare Area Assignment in the Internal Memory NAND Array Information
WordByteNoteDescription
1
2
3
4
5
6
7
8
NOTE 5 :
In case of ECC Bypass Mode, user can program in ECC Area.
NOTE 6 :
For all blocks, 8th word is available to the user.
However,in case of OTP Block, 8th word of sector 0, page 0 is reserved as OTP Locking Bit area.
Therefore, in case of OTP Block, user usage on this area is prohibited.
LSBMSB
LSB
MSB
LSB
LSB
MSB
LSB
MSB
LSB
MSB
LSB
MSB
LSB
MSB3Reserved for future use
LSB
MSB
Main area
256W
nd
2
W
1Invalid Block information in 1st and 2nd page of an invalid block
2Managed by internal ECC logic for Logical Sector Number dataMSB
3Reserved for future use
4Available to the user (Note 6)
Main area
LSBMSB
rd
3
W
Dedicated to internal ECC logic. Read Only. (Note 5)
ECCm 1st for main area data
Dedicated to internal ECC logic. Read Only. (Note 5)
ECCm 2nd for main area data
Dedicated to internal ECC logic. Read Only. (Note 5)
ECCm 3rd for main area data
Dedicated to internal ECC logic. Read Only. (Note 5)
ECCs 1st for 2nd word of spare area data
Dedicated to internal ECC logic. Read Only. (Note 5)
ECCs 2nd for 3rd word of spare area data
The following table shows the External Memory address map in Word and Byte Order.
Note that the data output is unknown while host reads a register bit of reserved area.
FLASH MEMORY
Division
Main area
(64KB)
Spare area
(8KB)
Reserved
(24KB)
Reserved
(8KB)
Reserved
(16KB)
Registers
(8KB)
Address
(word order)
0000h~00FFh00000h~001FEh512B
0100h~01FFh00200h~003FEh512BBootM 1BootRAM Main sector1
0200h~02FFh00400h~005FEh512B
0300h~03FFh00600h~007FEh512BDataM 0_1DataRAM Main page0/sector1
0400h~04FFh00800h~009FEh512BDataM 0_2DataRAM Main page0/sector2
0500h~05FFh00A00h~00BFEh512BDataM 0_3DataRAM Main page0/sector3
0600h~06FFh00C00h~00DFEh512BDataM 1_0DataRAM Main page1/sector0
0700h~07FFh00E00h~00FFEh512BDataM 1_1DataRAM Main page1/sector1
0800h~08FFh01000h~011FEh512BDataM 1_2DataRAM Main page1/sector2
0900h~09FFh01200h~013FEh512BDataM 1_3DataRAM Main page1/sector3
804Ah10094hReserved for the future useManaged by Internal ECC logic
DataS 1_3
804Bh10096hReserved for the current and future use
804Ch10098h
804Dh1009Ah
ECC Code for Main area data (2
ECC Code for Spare area data (1
804Eh1009ChReserved for the future use
nd
)ECC Code for Main area data (1st)
st
)ECC Code for Main area data (3rd)
ECC Code for Spare area data (2
804Fh1009EhFree Usage
NOTE :
- BI: Bad block Information
>Host can use complete spare area except BI and ECC code area. For example,
Host can write data to Spare area buffer except for the area controlled by ECC logic at program operation.
>In case of ‘with ECC’ mode, MuxOneNAND automatically generates ECC code for both main and spare data of memory during program operation,
but does not update ECC code to spare bufferRAM during load operation.
>When loading/programming spare area, spare area BufferRAM address(BSA) and BufferRAM sector count(BSC) is chosen via Start buffer register
as it is.
F108h~F1FFh1E210h~1E3FEhReserved-Reserved for user
F200h1E400hStart BufferR/W
F201h~F207h1E402h~1E40EhReserved-Reserved for user
F208h~F21Fh1E410h~1E43EhReserved-Reserved for vendor specific purposes
F220h1E440hCommandR/WHost control and memory operation commands
F221h1E442h
F222h1E444h
F223h~F22Fh1E446h~1E45EhReserved-Reserved for user
F230h~F23Fh1E460h~1E47EhReserved-Reserved for vendor specific purposes
F240h1E480hController StatusRController Status and result of memory operation
F241h1E482hInterruptR/WMemory Command Completion Interrupt Status
F242h~F24Bh1E484h~1E496hReserved-Reserved for user
F24Ch1E498h
Address
(byte order)
Name
Amount of
buffers
System
Configuration 1
System
Configuration 2
Start
Block Address
Host
Access
RAmount of data/boot buffers
Chip address for selection of NAND
Core in DDP & Block address
Destination Page & Sector address for Copy
back program
Buffer Number for the page data transfer to/from the memory and the start Buffer Address
The meaning is with which buffer to start and how many
buffers to use for the data transfer
R, R/Wmemory and Host Interface Configuration
-N/A
R/WStart memory block address in Write Protection mode
This Read/Write register describes the NAND Flash block address which will be loaded, programmed, or erased.
F100h, default = 0000h
1514131211109876543210
DFSReserved(0000)
NOTE :
1) Bit 0 should be fixed ‘low’ at 2X Program and 2X Cache Program.
DeviceNumber of BlockFBA
2Gb2048FBA[10:0]
4Gb DDP4096DFS[15] & FBA[10:0]
Start Address1 Information
Register InformationDescription
FBANAND Flash Block Address
DFSFlash Core of DDP (Device Flash Core Select)
FBA
1)
FLASH MEMORY
2.8.10 Start Address2 Register F101h (R/W)
This Read/Write register describes the BufferRAM of DDP (Device BufferRAM Select)
F101h, default = 0000h
1514131211109876543210
DBSReserved(000000000000000)
Start Address2 Information
Register InformationDescription
DBSBufferRAM and Register of DDP (Device BufferRAM Select)
CHIP 1
DBS
DFS
CE
CEINT
CE
DBS
DFS
Comp
Comp
DDP_OPT
GND
V
DD
DDP_OPT
Comp
Comp
CHIP 2
CONTROL
CONTROL
LOGIC
LOGIC
SRAM
BUFFER
FLASH
CORE
INT
INT
SRAM
BUFFER
FLASH
CORE
*Comp = Comparator
In the case of writing Register, both registers in chip1 and chip2 will be written regardless of DBS. Reading out from Register of chip1/chip2
follows the DBS setting.
In using DDP chip, BootRAM of Chip 1 will always be selected regardless of DBS.
Reading and Writing on the DataRAM of DDP chip is different. Only the DataRAM selected by DBS will be written and read out.
This Read/Write register describes the NAND Flash destination block address which will be copy back programmed. Also, this register indicates the block address for the first page to be read in Cache Read Operation.
F102h, default = 0000h
1514131211109876543210
Reserved(00000)FCBA
DeviceNumber of BlockFBA
2Gb2048FCBA[10:0]
Start Address3 Information
Register InformationDescription
FCBA
Block Address for the first page to be read in Cache Read Operation
2.8.12 Start Address4 Register F103h (R/W)
NAND Flash Copy Back Block Address &
FLASH MEMORY
This Read/Write register describes the NAND Flash destination page address in a block and the NAND Flash destination sector address in a
page for copy back programming. Also, this register describes the first page and sector address to be loaded in Cache Read Operation.
F103h, default = 0000h
1514131211109876543210
Reserved(00000000)FCPA
NOTE :
1) In case of ‘Cache Read Operation’, FCSA has to be set to 00.
This Read/Write register describes the number of page in Synchronous Burst Block Read.
F104h, default = 0000h
1514131211109876543210
Reserved(0000000000)FPC
Flash Page Count (FPC) Information
FPCNumber of Page
000000 (Default)64 page
0000113 page
0001004 page
....
11111163 pa g e
NOTE :
Synchronous Burst Block Read are NOT able to be perforformed with 1 or 2pages.
2.8.14 Start Address6 Register F105h
FLASH MEMORY
This register is reserved for future use.
2.8.15 Start Address7 Register F106h
This register is reserved for future use.
2.8.16 Start Address8 Register F107h (R/W)
This Read/Write register describes the NAND Flash start page address in a block for a page load, copy back program, or program operation
and the NAND Flash start sector address in a page for a load, copy back program, or program operation.
F107h, default = 0000h
1514131211109876543210
Reserved (00000000)
NOTE :
1) In case of ‘2X Cache Program’, the host programs data on same FPA of different Planes.
2) In case of ‘ Synchronous Burst Block Read’, ‘Cache Read Operation’, ‘2X Program’ and ‘2X Cache Program’,
FSA has to be set to 00.
This Read/Write register describes the BufferRAM Sector Count (BSC) and BufferRAM Sector Address (BSA).
The BufferRAM Sector Count (BSC) field specifies the number of sectors to be loaded, programmed, or copy back programmed. At 00 value
(the default value), the number of sector is "4". If the internal RAM buffer reaches its maximum value of 11, it will count up to 0 value to meet
the BSC value. For example, if BSA = 1101, BSC = 00, then the selected BufferRAM will count up from '1101
The BufferRAM Sector Address (BSA) is the sector 0~3 address in the internal BootRAM and DataRAM where data is placed.
F200h, default = 0000h
1514131211109876543210
Reserved(0000)BSAReserved(000000)BSC
NOTE :
In case of ’Cache Read’, BSA has to be set to 1000 or 1100. And BSC has to be set to 00.
In case of ’Synchronous Burst Block Read’, BSA has to be set to 1000 . And BSC has to be set to 00.
In case of ’2X Program’ or ’2X Cache Program’, BSA has to be set to 1000. And BSC has to be set to 00.
Start Address8 Information
ItemDescription
BSA[3]Selection bit between BootRAM and DataRAM
BSA[2]Selection bit between DataRAM0 and DataRAM1
BSA[1:0]
Selection bit between Sector0 and Sector1 in the internal BootRAM
Selection bit between Sector0 to Sector3 in the internal DataRAM
Command can be issued by two following methods, and user may select one way or the other to issue appropriate command;
1. Write command into Command Register when INT is at ready state. INT will automatically turn to busy state as command is issued. Once
the desired operation is completed, INT will go back ready state.
2. Write 0000h to INT bit of Interrupt Status Register, and then write command into Command Register. Once the desired operation is completed, INT will go back to ready state.
(00F0h and 00F3h may be accepted during busy state of some operations. Refer to the rightmost column of the command register table
below.)
F220h, default = 0000h
1514131211109876543210
Command
CMDOperation
0000hLoad single/multiple sector data unit into buffer00F0h, 00F3h
0013hLoad single/multiple spare sector into buffer00F0h, 00F3h
0080h
001AhProgram single/multiple spare data unit from buffer00F0h, 00F3h
001BhCopy back Program operation00F0h, 00F3h
007Dh
007Fh
0023hUnlock NAND array a block00F0h, 00F3h
002AhLock NAND array a block00F0h, 00F3h
002ChLock-tight NAND array a block00F0h, 00F3h
0027h
0071hErase Verify Read00F0h, 00F3h
000EhCache Read00F0h, 00F3h
000ChFinish Cache Read00F0h, 00F3h
000AhSynchronous Burst Block Read00F0h, 00F3h
0094hBlock Erase00F0h, 00F3h
0095hMulti-Block Erase00F0h, 00F3h
00B0hErase Suspend00F0h, 00F3h
0030hErase Resume00F0h, 00F3h
00F0hReset NAND Flash Core-
00F3h
0065hOTP Access00F0h, 00F3h
NOTE :
1) 0080h programs both main and spare area, while 001Ah programs only spare area. Refer to chapter 5.9 for NOP limits in issuing these commands. When using
0080h and 001Ah command, Read-only part in spare area must be masked by FF. (Refer to chapter 2.7.2)
2) ‘2X Program’ is executed by ‘007D’. This command can be used alone and used for ending ‘2X Cache Program’.
’2X Cache Program’ is executed by ‘007F’. This command cannot be used alone and must be ended by ‘007D’ for the last page program of cache program.
(Refer to 6.13 and 6.14)
3) If any blocks are changed to locked-tight state, the all block unlock command will fail. In order to use all block unlock command again, a cold reset is needed.
4) ‘Reset MuxOneNAND’(=Hot reset) command makes the registers and NAND Flash core into default state.
Program single/multiple sector data unit from buffer
2.8.18.1 Two Methods to Clear Interrupt Register in Command Input
FLASH MEMORY
To clear Interrupt Register in command input, user may select one from either following methods.
First method is to turn INT low by manually writing 0000h to INT bit of Interrupt Register.
Second method is input command while INT is high, and the device will automatically turn INT to low.
(Second method is equivalent with method used in general NAND Flash)
User may choose the desirable method to clear Interrupt Register.
Method 1: Manually set INT=0 before writing command into Command Register: Manual INT Mode
(1) Clear Interrupt Register (F241h) by writing 0000h into INT bit of Interrupt Register. This operation will make INT pin turn low.
(2) Write command into Command Register. This will make the device to perform the designated operation.
(3) INT pin will turn back to high once the operation is completed.
INT pin1)
INT bit
Write 0 into
INT bit of
Interrupt Register
NOTE : 1) INT pin polarity is based on ‘IOBE=1 and INT pol=1 (default)’ setting
Write command into
Command Register
1)
1)
1)
INT will automatically turn to high
when designated operation is completed.
1)
Method 2: Write command into Command Register at INT ready state: Auto INT Mode
(1) Write command into Command Register. This will automatically turn INT from high to low.
(2) INT pin will turn back to high once the operation is completed.
INT pin1)
INT bit
Write command into
Command Register
NOTE : 1) INT pin polarity is based on ‘IOBE=1 and INT pol=1 (default)’ setting
2.8.19 System Configuration 1 Register F221h (R, R/W)
This Read/Write register describes the system configuration.
F221h, default = 40C0h
1514131211109876543210
R/WR/WR/WR/WR/WR/WR/WR/WRR/WR/WR
RMBRWLBLECC
Read Mode (RM)
RMRead Mode
0Asynchronous read(default)
1Synchronous read
Read Mode Information[15]
ItemDefinitionDescription
RMRead Mode
RDY
pol
INT
pol
IOBE
RDY
Conf
Selects between asynchronous read mode and
FLASH MEMORY
Reserv
synchronous read mode
HFWMBWPS
ed
Burst Read Write Latency (BRWL)
Latency Cycles (Read/Write)
BRWL
000~010Reserved
0113(up to 40MHz. min)3(N/A)3(N/A)
100 (default)44(min.)4(N/A)
101555(N/A)
110666( min .)
111 777
* Default value of BRWL and HF value is BRWL=4, HF=0.
For host frequency over 66MHz, BRWL should be 6 or 7 while HF is 1.
For host frequency range of 40MHz~66MHz, BRWL should be set to 4~7 while HF is 0.
For host frequency under 40MHz, BRWL should be set to 3~7 while HF is 0.
Hosts must follow burst length set by BL when reading data in synchronous burst read.
BLBurst Length(Main)Burst Length(Spare)
000Continuous(default)
0014 words
0108 words
01116 words
10032 wordsN/A
1011K words (Block Read Only)N/A
110~111Reserved
NOTE :
1) For normal synchronous burst read, setting BL=000 (continuous) will read 1K words, depending on the number of clocks. In using Synchronous Burst Block
Read, setting BL=000 (continuous) will read the amount of data in a block set by number of page register.
2) Even in using Synchronous Burst Block Read, it is possible to use above burst length by setting BL register by following the above table.
Burst Length (BL) Information[11:9]
ItemDefinitionDescription
Specifies the size of the burst length during a synchronous
BLBurst Length
linear burst read and wrap around. And also burst length during a
synchronous linear burst write
FLASH MEMORY
Error Correction Code (ECC) Information[8]
ItemDefinitionDescription
ECCError Correction Code Operation
RDY Polarity (RDYpol) Information[7]
ItemDefinitionDescription
RDYpolRDY signal polarity
INT Polarity (INTpol) Information[6]
INTpolINT bit of Interrupt Status RegisterINT Pin output
IOBE is the I/O Buffer Enable for the INT and RDY signals. At startup, INT and RDY outputs are High-Z. Bits 6 and 7 become valid after IOBE
is set to "1". IOBE can be reset by a Cold Reset or by writing "0" to bit 5 of System Configuration1 Register.
This bit shows the overall internal status of the MuxOneNAND device.
In 2X Cache Program Operation, OnGo bit shows the overall status of 2X Cache Program process.
OnGo Information[15]
ItemDefinitionDescription
OnGoInternal Device Status
L
Plane1
Current
FLASH MEMORY
Plane2
Previous
0 = ready
1 = busy
Plane2
CurrentTO(0)
Lock
This bit shows whether the host is loading data from the NAND Flash array into the locked BootRAM or whether the host is performing a program/erase of a locked block of the NAND Flash array.
Lock Information[14]
LockLocked/Unlocked Check Result
0Unlocked
1Locked
Load
This bit shows the Load Operation status.
Load Information[13]
ItemDefinitionDescription
LoadLoad Operation status
1 = busy or error (see controller status output modes)
This bit shows the Program Operation status.
In 2X Cache Program Operation, ‘Prog’ bit shows the overall status of 2X Cache Program process.
Program Information[12]
ItemDefinitionDescription
ProgProgram Operation status
Erase
This bit shows the Erase Operation status.
Erase Information[11]
ItemDefinitionDescription
EraseErase Operation status
Error
1 = busy or error (see controller status output modes)
1 = busy or error (see controller status output modes)
FLASH MEMORY
0 = ready (default)
0 = ready (default)
This bit shows the overall Error status, including Load Reset, Program Reset, and Erase Reset status.
In case of 2X Cache Program, Error bit will show the accumulative error status of 2X Cache Program operation, so that if an error occurs during 2X Cache Program, this bit will stay as Fail status, until the end of 2X Cache Program.
In case of 2X Program, Error bit will indicate the 2X Program fail, regardless of Plane1 or Plane2.
Error Information[10]
Sector/Page Load/Program/CopyBack,
Error
0Pass
1Fail
Erase Suspend (Sus)
This bit shows the Erase Suspend status.
Sus Information[9]
SusErase Suspend Status
0Erase Resume(Default)
1
Program/2X Program/2X Cache Program Result
and Invalid Command Input
Erase Suspend, Program Ongoing(Susp.), Load Ongoing(Susp.),
Program Fail(Susp.), Load Fail(Susp.), Invalid Command(Susp.)
This bit shows whether the OTP block is locked or unlocked. Locking the OTP has the effect of a 'write-protect' to guard against accidental reprogramming of data stored in the OTP block.
The OTP
OTP Lock Information[6]
1st Block OTP Lock Status (OTP
This bit shows whether the 1st Block OTP is locked or unlocked.
Locking the 1st Block OTP has the effect of a 'Program/Erase protect' to guard against accidental re-programming of data stored in the 1st
block.
The OTP
OTP Lock Information[5]
status bit is automatically updated at power-on and it must be referred only on Chip1 within DDP.
L
status bit is automatically updated at power-on and it must be referred only on Chip1 within DDP.
This bit shows the previous program status of Plane1 at 2X Cache Program. This value is invalid only at the first ‘Read Controller Status Register’ step of 2X Cache Program and 2X Interleave Cache Program operation. (Refer to 6.14 and 6.15)
Plane1 Previous Information[4]
Plane1 PreviousStatus of previous program on Plane1
This bit shows the current program status of Plane1 at Final 2X Cache Program, 2X Program, and 2X Interleave Cache Program.
During 2X Cache Program prior to ‘2X Program’ command, which will be Final 2X Cache Program, this bit will be invalid (fixed to 0).
Plane1 Current Information[3]
Plane1 CurrentStatus of current program on Plane1
0Pass
1Fail
Plane2 Previous
This bit shows the previous program status of Plane2 at 2X Cache Program. This value is invalid only at the first ‘Read Controller Status Register’ step of 2X Cache Program and 2X Interleave Cache Program operation. (Refer to 6.14 and 6.15)
Plane2 Previous Information[2]
Plane2 PreviousStatus of previous program on Plane2
0Pass
1Fail
FLASH MEMORY
Plane2 Current
This bit shows the current program status of Plane2 at Final 2X Cache Program, 2X Program, and 2X Interleave Cache Program.
During 2X Cache Program prior to ‘2X Program’ command, which will be Final 2X Cache Program, this bit will be invalid (fixed to 0).
Plane2 Current Information[1]
Plane2 CurrentStatus of current program on Plane2
0Pass
1Fail
Time Out (TO)
This bit determines if there is a time out for load, program, copy back program, and erase operations. It is fixed at 'no time out'.
Controller Status Register Output Modes (Continued)
Controller Status Register [15:0]
Mode
Program Fail on
2X Program
(Plane1)
Program Fail on
2X Program
(Plane2)
Program Fail on
2X Program
(Plane1 & Plane2)
Previous Program Fail Dur-
ing 2X Cache Program
(Plane1)
Previous Program Fail Dur-
ing 2X Cache Program
(Plane2)
Previous Program Fail Dur-
ing 2X Cache Program
(Plane1 & Plane2)
Program Fail
After Final 2X
Cache Program
NOTE :
1) "1" for OTP Block Lock, "0" for OTP Block Unlock.
2) "1" for 1st Block OTP Lock, "0" for 1st Block OTP Unlock.
3) This value is invalid in this case. Host can recognize the status of the only previous operation.
4) Plane previous value is updated immediately after INT goes to ready state.4
After Final 2X Cache Program operation by ‘2X Program Command’ is completed, Current and Previous Program pass/fail status on both Plane1 and Plane2 will
This Read/Write register shows status of the MuxOneNAND interrupts.
In DDP, INT register will not be written if DBS, DFS is not set.
F241h, defaults = 8080h after Cold Reset; 8010h after Warm/Hot Reset
1514131211109876543210
INTReserved(0000000)RIWIEIRSTIReserved(0000)
Interrupt (INT)
This is the master interrupt bit. The INT bit is wired directly to the INT pin on the chip. Upon writing '0' to the INT bit, the INT pin goes low if
INTpol is high and goes high if INTpol is low.
INT Interrupt [15]
StatusConditions
One or more of RI, WI, RSTI and EI is set to ‘1’, or
sets itself to ‘1’
clears to ‘0’
0065h, 0023h, 0071h, 002Ah, 0027h and 002Ch
commands are completed.
’0’ is written to this bit,
Cold/Warm/Hot reset is being performed, or
command is written to Command Register in INT
auto mode
Default State
ColdWarm/hot
11 0off
FLASH MEMORY
Valid
State
0
1
1
0
Interrupt
Function
Pending
off
Read Interrupt (RI)
This is the Read interrupt bit.
RI Interrupt [7]
StatusConditions
sets itself to ‘1’
clears to ‘0’
command is written to Command Register in INT
At the completion of an Load Operation
(0000h, 000Eh, 000Ch, 000Ah, 0013h,
This Read/Write register shows the NAND Flash block address in the Write Protection mode. Setting this register precedes a 'Lock Block'
command, 'Unlock Block' command, or ‘Lock-Tight' Command.
F24Ch, default = 0000h
1514131211109876543210
Reserved(000000)SBA
DeviceNumber of BlockSBA
2Gb2048[10:0]
SBA Information[10:0]
ItemDefinitionDescription
SBAStart Block AddressPrecedes Lock Block, Unlock Block, or Lock-Tight commands
2.8.24 End Block Address Register F24Dh
FLASH MEMORY
This register is reserved for future use.
2.8.25 NAND Flash Write Protection Status Register F24Eh (R)
This Read register shows the Write Protection Status of the NAND Flash memory array.
To read the write protection status, FBA(DFS and DBS also in case of DDP) has to be set before reading the register
F24Eh, default = 0002h
1514131211109876543210
Reserved(0000000000000)USLSLTS
Write Protection Status Information[2:0]
ItemDefinitionDescription
USUnlocked Status1 = current NAND Flash block is unlocked
LSLocked Status
LTSLocked-Tight Status1 = current NAND Flash block is locked-tight
1 = current NAND Flash block is locked
Or First Block of NAND Flash Array is Locked to be OTP
This Read register shows the Error Correction Status. The MuxOneNAND can detect 1- or 2-bit errors and correct 1-bit errors. 3-bit or more
error detection and correction is not supported.
ECC can be performed on the NAND Flash main and spare memory areas. The ECC status register can also show the number of errors in a
sector as a result of an ECC check in during a load operation. ECC status bits are also updated during a boot loading operation.
ECC registers will be reset when another command is issued.
Status of errors in the 1st selected sector of the main BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
Status of errors in the 2nd selected sector of the main BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
Status of errors in the 3rd selected sector of the main BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
Status of errors in the 4th selected sector of the main BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
Status of errors in the 1st selected sector of the spare BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
Status of errors in the 2nd selected sector of the spare BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
Status of errors in the 3rd selected sector of the spare BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
Status of errors in the 4th selected sector of the spare BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
2.8.27 ECC Result of 1st Selected Sector, Main Area Data Register FF01h (R)
This Read register shows the Error Correction result for the 1st selected sector of the main area data. ECCposWord0 is the error position
address in the Main Area data of 256 words. ECCposIO0 is the error position address which selects 1 of 16 DQs. ECCposWord0 and
ECCposIO0 are also updated at boot loading.
FF01h, default = 0000h
1514131211109876543210
Reserved(0000)ECCposWord0ECCposIO0
2.8.28 ECC Result of 1st Selected Sector, Spare Area Data Register FF02h (R)
This Read register shows the Error Correction result for the 1st selected sector of the spare area data. ECClogSector0 is the error position
address for 1.5 words of 2nd and 3rd words in the spare area. ECCposIO0 is the error position address which selects 1 of 16 DQs.
ECClogSector0 and ECCposIO0 are also updated at boot loading.
FF02h, default = 0000h
1514131211109876543210
Reserved(0000000000)ECClogSector0ECCposIO0
FLASH MEMORY
2.8.29 ECC Result of 2nd Selected Sector, Main Area Data Register FF03h (R)
This Read register shows the Error Correction result for the 2nd selected sector of the main area data. ECCposWord1 is the error position
address in the Main Area data of 256 words. ECCposIO1 is the error position address which selects 1 of 16 DQs. ECCposWord1 and
ECCposIO1 are also updated at boot loading.
FF03h, default = 0000h
1514131211109876543210
Reserved(0000)ECCposWord1ECCposIO1
2.8.30 ECC Result of 2nd Selected Sector, Spare Area Data Register FF04h (R)
This Read register shows the Error Correction result for the 2nd selected sector of the spare area data. ECClogSector1 is the error position
address for 1.5 words of 2nd and 3rd words in the spare area. ECCposIO1 is the error position address which selects 1 of 16 DQs.
ECClogSector1 and ECCposIO1 are also updated at boot loading.
2.8.31 ECC Result of 3rd Selected Sector, Main Area Data Register FF05h (R)
This Read register shows the Error Correction result for the 3rd selected sector of the main area data. ECCposWord2 is the error position
address in the Main Area data of 256 words. ECCposIO2 is the error position address which selects 1 of 16 DQs. ECCposWord2 and
ECCposIO2 are also updated at boot loading.
FF05h, default = 0000h
1514131211109876543210
Reserved(0000)ECCposWord2ECCposIO2
FLASH MEMORY
2.8.32 ECC Result of 3
This Read register shows the Error Correction result for the 3rd selected sector of the spare area data. ECClogSector2 is the error position
address for 1.5 words of 2nd and 3rd words in the spare area. ECCposIO2 is the error position address which selects 1 of 16 DQs.
ECClogSector2 and ECCposIO2 are also updated at boot loading.
FF06h, default = 0000h
1514131211109876543210
rd
Selected Sector, Spare Area Data Register FF06h (R)
Reserved(0000000000)ECClogSector2ECCposIO2
2.8.33 ECC Result of 4th Selected Sector, Main Area Data Register FF07h (R)
This Read register shows the Error Correction result for the 4th selected sector of the main area data. ECCposWord3 is the error position
address in the Main Area data of 256 words. ECCposIO3 is the error position address which selects 1 of 16 DQs. ECCposWord3 and
ECCposIO3 are also updated at boot loading.
FF07h, default = 0000h
1514131211109876543210
Reserved(0000)ECCposWord3ECCposIO3
2.8.34 ECC Result of 4th Selected Sector, Spare Area Data Register FF08h (R)
This Read register shows the Error Correction result for the 4th selected sector of the spare area data. ECClogSector3 is the error position
address for 1.5 words of 2nd and 3rd words in the spare area. ECCposIO3 is the error position address which selects 1 of 16 DQs.
ECClogSector3 and ECCposIO3 are also updated at boot loading.
This section of the datasheet discusses the operation of the MuxOneNAND device. It is followed by AC/DC
Characteristics and Timing Diagrams which may be consulted for further information.
The MuxOneNAND supports a limited command-based interface in addition to a register-based interface for performing operations on the
device.
3.1 Command Based Operation
The command-based interface is active in the boot partition. Commands can only be written with a boot area address. Boot area data is only
returned if no command has been issued prior to the read.
The entire address range, except for the boot area, can be used for the data buffer. All commands are written to the boot partition. Writes outside the boot partition are treated as normal writes to the buffers or registers.
The command consists of one or more cycles depending on the command. After completion of the command the device starts its execution.
Writing incorrect information including address and data to the boot partition or writing an improper command will terminate the previous command sequence and make the device enter the ready status.
The defined valid command sequences are stated in Command Sequences Table.
Command based operations are mainly used when MuxOneNAND is used as Booting device, and all command based operations only supports asynchronous reads and writes. With DDP, command based operation except reset is applicable only on chip1.
Command Sequences
Command DefinitionCycles1st cycle2nd cycle
Reset MuxOneNAND
Load Data into Buffer
Read Identification Data
NOTE :
1) BP(Boot Partition) : BootRAM Area [0000h ~ 01FFh, 8000h ~ 800Fh]. (Chip 1 only in case of DDP)
2) Load Data into Buffer operation is available within a block(128KB) (Chip1 only in case of DDP)
3) Load 2KB unit into DataRAM0. Current Start address(FPA) is automatically incremented by 2KB unit after the load.
4) 0000h -> Data is Manufacturer ID (Chip1 only in case of DDP)
0001h -> Data is Device ID (Chip1 only in case of DDP)
0002h -> Current Block Write Protection Status (Chip1 only in case of DDP)
toggling can terminate ‘Read Identification Data’ operation.
The Reset command is given by writing 00F0h to the boot partition address. Reset will return all default values into the device.
3.1.2 Load MuxOneNAND Command
Load Data into Buffer command is a two-cycle command. Two sequential designated command activates this operation. Sequentially writing
00E0h and 0000h to the boot partition [0000h~01FFh, 8000h~800Fh] will load one page to DataRAM0. This operation refers to FBA and FPA.
FSA, BSA, and BSC are not considered.
At the end of this operation, FPA will be automatically increased by 1. So continuous issue of this command will sequentially load data in next
page to DataRAM0. This page address increment is restricted within a block.
The default value of FBA and FPA is 0. Therefore, initial issue of this command after power on will load the first page of memory, which is usually boot code.
3.1.3 Read Identification Data Command
The Read Identification Data command consists of two cycles. It gives out the devices identification data according to the given address. The
first cycle is 0090h to the boot partition address and second cycle is read from the addresses specified in Identification Data Description Table.
Identification Data Description
AddressData Out
0000hManufacturer ID (00ECh)
0001h
0002h
NOTE :
1) Refer to Device ID Register (Chapter 2.8.3)
2)To read the write protection status, FBA has to be set before issuing this command.
At system power-up, the voltage detector in the device detects the rising edge of Vcc and releases an internal power-up reset signal. This triggers bootcode loading. Bootcode loading means that the boot loader in the device copies designated sized data (1KB) from the beginning of
memory into the BootRAM. This sequence is the Cold Reset of MuxOneNAND.
The POR(Power On Reset) triggering level is typically 1.5V. Boot code copy operation activates 400us after POR.
Therefore, the system power should reach 1.7V within 400us from the POR triggering level for bootcode data to be valid.
It takes approximately 70us to copy 1KB of bootcode. Upon completion of loading into the BootRAM, it is available to be read by the host. The
INT pin is not available until after IOBE = 1 and IOBE bit can be changed by host.
3.3.2 Warm Reset Mode Operation
See Timing Diagrams 6.18
FLASH MEMORY
A Warm Reset means that the host resets the device by using the RP
ations and executes internal reset operation and resets current NAND Flash core operation synchronized with the falling edge of RP
During an Internal Reset Operation, the device initializes internal registers and makes output signals go to default status.
The BufferRAM data is kept unchanged after Warm/Hot reset operations.
The device guarantees the logic reset operation in case RP
The device may reset if tRP < tRP min(200ns), but this is not guaranteed.
Warm reset will abort the current NAND Flash core operation. During a warm reset, the content of memory cells being altered is no longer
valid as the data will be partially programmed or erased.
Warm reset has no effect on contents of BootRAM and DataRAM.
pulse is longer than tRP min(200ns).
pin. When the a RP low is issued, the device logic stops all current oper-
.
3.3.3 Hot Reset Mode Operation
See Timing Diagram 6.19
A Hot Reset means that the host resets the device by Reset command. The reset command can be either Command based or Register
Based. Upon receiving the Reset command, the device logic stops all current operation and executes an internal reset operation and resets
the current NAND Flash core operation.
During an Internal Reset Operation, the device initializes internal registers and makes output signals go to default status. The BufferRAM data
is kept unchanged after Warm/Hot reset operations.
Hot reset has no effect on contents of BootRAM and DataRAM.
3.3.4 NAND Flash Core Reset Mode Operation
See Timing Diagram 6.20
The Host can reset the NAND Flash Core operation by issuing a NAND Flash Core reset command. NAND Flash core reset will abort the current NAND Flash core operation. During a NAND Flash core reset, the content of memory cells being altered is no longer valid as the data will
be partially programmed or erased.
NAND Flash Core Reset has an effect on neither contents of BootRAM and DataRAM nor register values.
The MuxOneNAND can be write-protected to prevent re-programming or erasure of data.
The areas of write-protection arethe BootRAM, and the NAND Flash Array.
3.4.1 BootRAM Write Protection Operation
At system power-up, voltage detector in the device detects the rising edge of Vcc and releases the internal power-up reset signal which triggers bootcode loading. And the designated size data(1KB) is copied from the first page of the first block in the NAND flash array to the
BootRAM.
After the bootcode loading is completed, the BootRAM is always locked to protect the boot code from the accidental write.
3.4.2 NAND Flash Array Write Protection Operation
The device has both hardware and software write protection of the NAND Flash array.
Hardware Write Protection Operation
The hardware write protection operation is implemented by executing a Cold or Warm Reset. On power up, the NAND Flash Array is in its
default, locked state. The entire NAND Flash array goes to a locked state after a Cold or Warm Reset.
FLASH MEMORY
Software Write Protection Operation
The software write protection operation is implemented by writing a Lock command (002Ah) or a Lock-tight command (002Ch) to command
register (F220h).
Lock (002Ah) and Lock-tight (002Ch) commands write protects the block defined in the Start Block Address Register F24Ch.
3.4.3 NAND Array Write Protection States
There are three lock states in the NAND Array: unlocked, locked, and locked-tight.
MuxOneNAND supports lock/unlock/lock-tight by one block, and All Block Unlock at once. If any blocks are changed to locked-tight state, the
all block unlock command will fail. In order to use all block unlock command again, a cold reset is needed.
Write Protection Status
The current block Write Protection status can be read in NAND Flash Write Protection Status Register(F24Eh). There are three bits - US, LS,
LTS -, which are not cleared by hot reset. These Write Protection status registers are updated when FBA is set, and when Write Protection
command is entered.
The followings summarize locking status.
example)
In default, [2:0] values are 010.
-> If host executes unlock block operation, then [2:0] values turn to 100.
-> If host executes lock-tight block operation, then [2:0] values turn to 001.
3.4.3.1 Unlocked NAND Array Write Protection State
An Unlocked block can be programmed or erased. The status of an unlocked block can be changed to locked or locked-tight using the appropriate software command. (locked-tight state can be achieved via lock-tight command which follows lock command)
Only one block can be released from lock state to unlock state with Unlock command and addresses. The unlocked block can be changed
with new lock command. Therefore, each block has its own lock/unlock/lock-tight state.
If any blocks are changed to locked-tight state, the all block unlock command will fail. In order to use all block unlock command again, a cold
reset is needed.
Even though SBA is fixed to 000h, Unlock will be done for allblock.
3.4.3.2 Locked NAND Array Write Protection State
A Locked block cannot be programmed or erased. All blocks default to a locked state following a Cold or Warm Reset. Unlocked blocks can be
changed to locked using the Lock block command. The status of a locked block can be changed to unlocked or locked-tight using the appropriate software command.
3.4.3.3 Locked-tight NAND Array Write Protection State
A block that is in a locked-tight state can only be changed to locked state after a Cold or Warm Reset. Unlock and Lock command sequences
will not affect its state. This is an added level of write protection security. If any blocks are changed to locked-tight state, the all block unlock
command will fail. In order to use all block unlock command again, a cold reset is needed.
A block must first be set to a locked state before it can be changed to locked-tight using the Lock-tight command.
The device is designed to offer protection from any involuntary program/erase during power-transitions.
pin which provides hardware protection is recommended to be kept at VIL before Vcc drops to 1.5V.
RP
3.6 Load Operation
See Timing Diagrams 6.11
The Load operation is initiated by setting up the start address from which the data is to be loaded. The Load command is issued in order to initiate the load.
During a Load operation, the device:
-Transfers the data from NAND Flash array into the BufferRAM
-ECC is checked and any detected and corrected error is reported in the status response as well as
any unrecoverable error.
Once the BufferRAM has been filled, an interrupt is issued to the host so that the contents of the BufferRAM can be read. The read from the
BufferRAM can be an asynchronous read mode or synchronous read mode. The status information related to load operation can be checked
by the host if required.
The device has a dual data buffer memory architecture (DataRAM0, DataRAM1), each 2KB in size. Each DataRAM buffer has 4
Sectors. The device is capable of independent and simultaneous data-read operation from one data buffer and data-load operation to the
other data buffer. Refer to the information for more details in section 3.15.1, "Read-While-Load Operation".
FLASH MEMORY
Load Operation Flow Chart Diagram
Start
Select DataRAM for DDP
Add: F101h DQ=DBS
Write ‘DFS*, FBA’ of Flash
Add: F100h DQ=DFS, FBA
Write ‘FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ‘BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Write 0 to interrupt register
Add: F241h DQ=0000h
NOTE :
1) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
The device has two read modes; Asynchronous Read and Synchronous Burst Read.
The initial state machine automatically sets the device into the Asynchronous Read Mode (RM=0) to prevent the spurious altering of memory
content upon device power up or after a Hardware reset. No commands are required to retrieve data in Asynchronous Read Mode.
The Synchronous Read Mode is enabled by setting RM bit of System Configuration1 Register (F221h) to Synchronous Read Mode (RM=1).
See Section 2.8.19 for more information about System Configuration1 Register.
In an Asynchronous Read Mode, data is output with respect to a logic input, AVD
Output data will appear on DQ15-DQ0 when a valid address is asserted on A15-A0 while driving AVD
function of the AVD
Address access time from AVD
The Chip Enable access time (tCE) is equal to the delay from the falling edge of CE
The Output Enable access time (tOE) is the delay from the falling edge of OE
signal is to latch the valid address.
low (tAA) is equal to the delay from valid addresses to valid output data.
In a Synchronous Read Mode, data is output with respect to a clock input.
The device is capable of a continuous linear burst operation and a fixed-length linear burst operation of a preset length. Burst address
sequences for continuous and fixed-length burst operations are shown in the table below.
In the burst mode, the initial word will be output asynchronously, regardless of BRWL. While the following words will be determined by BRWL
value.
The latency is determined by the host based on the BRWL bit setting in the System Configuration 1 Register. The default BRWL is 4 latency
cycles. At clock frequencies of 40MHz or lower, latency cycles can be reduced to 3. BRWL can be set up to 7 latency cycles.
The BRWL registers can be read during a burst read mode by using the AVD
The initial word is output at tIAA after the rising edge of the first CLK cycle. The RDY output indicates the initial word is ready to the system by
pulsing high. If the device is accessed synchronously while it is set to Asynchronous Read Mode, the first data can still be read out.
Subsequent Clock Cycles
Subsequent words are output (Burst Access Time from Valid Clock to Output) tBA after the rising edge of each successive clock cycle, which
automatically increments the internal address counter.
Terminating Burst Read
The device will continue to output sequential burst data until the system asserts CE
ignated address (see Section 2.7.3 for address map information). Alternately, a Cold/Warm/Hot Reset, or a WE
burst read operation.
Synchronous Read Boundary
DivisionAdd.map(word order)
BootRAM Main(0.5KW)0000h~01FFh
BufferRAM0 Main(1KW)0200h~05FFh
BufferRAM1 Main(1KW)0600h~09FFh
Reserved Main0A00h~7FFFh
BootRAM Spare(16W)8000H~800Fh
BufferRAM0 Spare(32W)8010h~802Fh
BufferRAM1 Spare(32W)8030h~804Fh
Reserved Spare8050h~8FFFh
Reserved Register9000h~EFFFh
Register(4KW)F000h~FFFFh
high, or RP low, wrapping around until it reaches the des-
FLASH MEMORY
low pulse will terminate the
Not Support
Not Support
Not Support
Not Support
Not Support
* Reserved area is not available on Synchronous read
3.7.2.2 4-, 8-, 16-, 32-Word Linear Burst Read Operation
See Timing Diagram 6.1
An alternate Burst Read Mode enables a fixed number of words to be read from consecutive address.
The device supports a burst read from consecutive addresses of 4-, 8-, 16-, and 32-words with a linear-wrap around. When the last word in
the burst has been reached, assert CE
In this mode, the start address for the burst read can be any address of the address map with one exception. The device does not support a
32-word linear burst read on the spare area of the BufferRAM.
Upon power up, the number of initial clock cycles from Valid Address (AVD
The number of clock cycles (n) which are inserted after the clock which is latching the address. The host can read the first data with the
(n+1)th rising edge.
The number of total initial access cycles is programmable from three to seven cycles. After the number of programmed burst clock cycles is
reached, the rising edge of the next clock cycle triggers the next burst data.
Four Clock Burst Read Latency (BRWL=4 case)
CE
CLK
AVD
A/DQ0:
A/DQ15
OE
RDY
Hi-Z
-10123
Val id
Address
tIAA
tRDYA
4
D6D7D0D1D2D3D7D0
) to initial data defaults to four clocks.
Rising edge of the clock cycle following last read latency
triggers next burst data
tBA
tRDYS
Hi-Z
*NOTE :
BRWL=4, HF=0 is recommended for 40MHz~66MHz. For frequency over 66MHz, BRWL should be 6 or 7 while HF=1.
Also, for frequency under 40MHz, BRWL can be reduced to 3, and HF=0.
3.7.3 Handshaking Operation
The handshaking feature allows the host system to simply monitor the RDY signal from the device to determine
when the initial word of burst data is ready to be read.
To set the number of initial cycles for optimal burst mode, the host should use the programmable burst read latency configuration (see Section
2.8.19, "System Configuration1 Register").
The rising edge of RDY which is derived at the same cycle of data fetch clock indicates the initial word of valid burst data.
3.7.4 Output Disable Mode Operation
When the CE or OE input is at VIH, output from the device is disabled.
The outputs are placed in the high impedance state.
A Normal Load Operation(0000h) consists of sequential operation of ‘sensing from NAND Flash Array to Page Buffer’ and ‘transferring from
Page Buffer to DataRAM’.
Cache Read is a method of improving the data read throughput performance of the device by allowing new data to be transferred from the
NAND Flash Array memory into a Page Buffer while the previous data that was requested is transferred from the Page Buffer to the DataRAM.
This method is called Transfer-While Sensing Operation.
This ability to simultaneously sense a new page shortens the read cycle resulting in performance increase to 108Mbytes/second.
Cache Read Mode is designed to continuously read massive data from random address at a high speed.
The characteristics of Cache read is as follows;
-Before entering ‘First Cache Read Command(000Eh)’, address of two pages which will be read will be set on address registers. The register
information follows on next line.
-Register used for first page is Copy-back registers (FCBA, FCPA and FCSA). and the registers used for addressing second page and following cache read are normal address registers(FBA, FPA and FSA). At Cache Read Operation, FCSA and FSA must be set to "00".
-BSA setting is only required once at ‘First Cache Read’ cycle. From the following cycles, BSA will be automatically switched to select
DataRAM0 and DataRAM1 alternately.
-BSC must be fixed as "00"
-To eliminate performance degradation during Ready state(INT high state) due to register setting time, setting registers (FBA, FPA and FSA)
during busy state(INT low state) is possible from third address setting onwards.
-Inputting other commands, which is not related to Cache Read, between ‘First Cache Read Command’ and ‘Finish Cache Read Command’
will fail the Cache Read operation.
-In case of performing Cache Read at INT auto mode, INT low setting is not necessary. INT will automatically go to low when Cache Read
command is issued.
-If host changes DBS or DFS to access the other chip for DDP while performing cache read operation, it will fail the cache read operation.
1) In case of first cycle cache read, BSA must be set to 1000 or 1100, and from second cycle cache read,
BSA will automatically be switched between DataRAM0 and DataRAM1.
2) BSC, FSA and FCSA must be set to "00".
3) These steps can also be set during INT=High, before next ’Cache Read Command’.
4) ’Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
5) When host reads data from DataRAM, host should start from the DataRAM of the first set BSA, and then next DataRAM alternately, as the number of Cache
Read.
-1st Address Setting : Address Setting Operation for first page load(FCBA, FCPA, FCSA, and BSA).
-2nd~nth Address Setting : Address Setting Operation from 2nd~nth page load(FBA and FPA).
-Command Setting : It consists of writing 0 to Interrupt register and writing command to Command register. (In INT auto mode, writing 0 to Interrupt register may be ignored) -Status Read : It consists of INT high state checking and Controller Status Register checking step.
ECC Error at Finish Cache Read - Load / Error
NOTE :
1) 3rd~nth address can be set during INT=low, and also during INT=High, before next ‘Cache Read Command’.
MuxOneNAND is internally composed of two DataRAMs and NAND Flash Array. And for host to read data from NAND Cell Array, load
operation which moves data from NAND Cell Array to DataRAM is required. After this load operation, host may use various read mode, such
as synchronous burst read or asynchronous read, to read data from MuxOneNAND.
But these types of read mode require issuing of address and Load Command for each page, and CPU had the burden of calculating address
to be read. To solve this burden, Synchronous Burst Block Read Mode is introduced, which enables host to read the data of succeeding page
with CLK toggle, after initial address setting and command input. This Synchronous Burst Block Read is intended to transfer continuous massive data in NAND Flash Array at high speed, and it sequentially reads out data only from Main Area, where large sized data is stored.
The addresses set for Synchronous Burst Block Read is Start Page Address(FPA), Number of Page(FPC) and BSA. Note that the number of
page set by FPC should not exceed the block boundary, since page wrap-around is not supported. And from the start page address to desired
number of page, Synchronous Burst Block Read will output data by CLK toggle and CE
64pages. (Refer to 2.8.13)
The Host can access MuxOneNAND during Synchronous Burst Block Read in between every 1-page of read cycle. When host accesses DataRAMs, the start address of DataRAMs must be a multiple of 4. In doing this, INT pin or bit is used as indicator signal. Thus, before host reads
1-page data from DataRAM, host must confirm INT pin or bit return low to high, and then enable CE
read operation for this 1-page is done, INT will automatically turn low. Note that INT auto mode is a mandatory option for Synchronous Burst
Block Read, and WE
Therefore, the steps are as follows;
1. Host will deassert CE
2. And then assert the CE
3. Then disable this other device by deasserting CE
4. Once the host confirms the INT pin or bit of MuxOneNAND turn low to high, host may read the data of following page by asserting CE
to synchronous burst block read operation timing).
must always be set high throughout this operation.
of MuxOneNAND after checking the indicator(INT pin / bit) turn low.
of other device to perform another operation.
when desired operation is done.
enable/disable. FPC must be set from 3pages to
to read 1-page of data. And when host
FLASH MEMORY
(refer
Return of INT pin to high implies the internal load operation from NAND Flash Array to DataRAM is complete. Also, even when the host is
NOT accessing other device, this assert/deassert of CE
To read data from this loaded 1 page, same 4, 8, 16, 32, continuous (1K word) linear burst read operation of synchronous burst read may be
utilized.
In conclusion, by supporting indicator signal such as INT pin or bit, host may access other device without terminating continuous linear synchronous burst block read, while using continuous linear burst read mode as synchronous block read within 1 block between every (n) page
and (n+1) page. (refer to synchronous burst block read boundary)
For 1 bit error during Synchronous Burst Block Read, ECC correction will be done automatically, and Controller Status Register(F240h) will
show ‘load ok’ status. On the other hand, for 2 bit error during Synchronous Burst Block Read, ECC correction is not possible, and Controller
Status Register(F240h) will show ‘load fail’ status.
Note that for both cases, ECC Status Register(FF00h) value will remain the same at value of 0000h.
3.9.1 Burst Address Sequence During Synchronous Burst Block Read Mode
In a Synchronous Burst Block Read, data is output with respect to a clock input.
MuxOneNAND is capable of a continuous linear burst operation within one block size and a fixed-length linear burst operation of a preset
length.
Note that only INT pin is valid indicator signal for continuous linear burst read operation but both INT pin and bit are valid for a fixed-length linear burst operation.
Same as the normal burst mode, the initial word will be output asynchronously, regardless of BRWL While the following words will be determined by BRWL value.
The latency is determined by the host based on the BRWL bit setting in the System Configuration 1 Register. The default BRWL is 4 latency
cycles. At clock frequencies of 40MHz or lower, latency cycles can be reduced to 3, at frequency range from 40MHz to 66MHz, latency cycle
should be over 4. And at 83MHz frequency, BRWL should be set to 6. BRWL can be set up to 7 latency cycles.
FLASH MEMORY
The BRWL registers can be read during a burst read mode by using the AVD
signal with an address.
3.9.2 Continuous Linear Burst Read Operation During Synchronous Burst Block Read Mode
First Clock Cycle
The initial word is output at tIAA after the rising edge of the first CLK cycle. The RDY output indicates the initial word is ready to the system by
pulsing high. If the device is accessed synchronously while it is set to Asynchronous Read Mode, the first data can still be read out.
Subsequent Clock Cycles
Subsequent words are output (Burst Access Time from Valid Clock to Output) tBA after the rising edge of each successive clock cycle, which
automatically increments the internal address counter.
Terminating Synchronous Burst Block Read
The device will continue to output sequential burst data until the system resets (Cold/Warm/Hot Reset), wrapping around until it reaches the
designated address (see Section 3.9.1 for burst address sequence). Asserting WE
operation.
low is prohibited during Synchronous Burst Block Read
- 100 -
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