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KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR
LOW NOISE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T
Characteristic Symbol Rating Unit
Cllector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
ELECTRICAL CHARACTERISTICS ( T
Characteristic Symbol Test Conditions Min Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
:KST5086
:KST5087
:KST5086
:KST5087
:KST5086
:KST5087
Collector-Emitter Saturation Volta ge
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Collector-Base Capacitance
Noise Figure
KST5086
KST5087
KST5087
BV
BV
I
CBO
h
FE
VCE(sat)
V
BE
f
T
C
OB
NF
A
CBO
CEO
(sat)
=25
=25
A
ÎÎ)
-50
-50
-3
-50
350
150
ÎÎ)
V
V
V
mA
mW
Î
= -100À, IE=0
I
C
= -1mA, IB=0
I
C
V
= -20V, IE=0
CB
V
= -5V, IC= -100
CE
= -5V, IC= -1mA
V
CE
V
= -5V, IC= -10mA
CE
= -10mA, IB= -1mA
I
C
= -10mA, IB= -1mA
I
C
= -5V, IC= -500
V
CE
f=20MHz
= -5V, IE=0
V
CB
f=100MHz
= -100À, VCE= -5V
I
C
=3Ï, f=1KHz
R
S
V
= -5V, IC= -20mA
CE
=10
Ï
R
S
f=10Hz to 15.7KHz
SOT-23
1. Base 2. Emitter 3. Collector
-50
-50
À
150
250
150
250
150
250
À
40
-50
500
800
-0.3
-0.85
V
V
nA
V
V
MHz
pF
4
dB
3
dB
2
2
dB
MARKING CODE
TYPE KST5086 KST5087
MARK 2P 2Q
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KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR
Page 3
KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR
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