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KSR2002 PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING APPLI CATION (Bias Resistor Built In)
•
Switching circuit, Inverter, Interface circuit, Driver Circuit
•
Built in bias Resistor (R
• Complement to KSR1002
ABSOLUTE MAXIMUM RATINGS (TA=25
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipatio n
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS ( T
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
1
=10
Ï
, R
=10Ï)
2
ÎÎ)
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
A
BV
CBO
BV
CEO
I
CBO
h
FE
VCE(sat)
f
T
C
OB
VI(off)
V
(on)
I
R
1
R1/R
2
-50
-50
-10
-100
300
150
-55 ~ 150
=25
ÎÎ)
V
V
V
mA
mW
Î
Î
IC= -10À, IE=0
= -100À, IB=0
I
C
= -40V, IE=0
V
CB
V
= -5V, IC= -5mA
CE
I
= -10mA, IB= -0.5mA
C
V
= -5mA, IC= -10V
CE
V
= -10V, IE=0
CB
f=1.0MHz
V
= -5V, IC= -100
CE
= -0.3V, IC= -10mA
V
CE
TO-92
1. Emitter 2. Collector 3. Base
-50
-50
30
À
-0.5
7
0.9
200
5.5
V
V
-0.1
-0.3
À
V
MHz
pF
V
V
-3
Ï
13
10
1.1
1
Equivalent Circui t
Base
Collector
Emitter
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KSR2002 PNP EPITAXIAL SILICON TRANSISTOR
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