Page 1
KSH47/50 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAG E AND HIGH RELIABILI TY
D-PACK FOR SURFACE MOUNT
APPLICATIONS
• Load Formed for Surface Mount Application(No Suffix)
• Straight Lead (I.PACK, “- I Suffix)
• Electrically Similar to Popular TIP47 and TIP47C
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Emitter Voltage
: KSH47
: KSH50
Collector Emitter Voltage
: KSH47
: KSH50
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( T
Collector Dissipation (T
=25&)
C
=25&)
A
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Max Unit
* Collector Emitter Sustaining Voltage
: KSH50
Collector Cutoff Current
: KSH50
Collector Cutoff Current
: SKH50
Emitter Cutoff Current
* DC Current Gain
* Collector Emitter Saturation Voltage
* Base Emitter Saturation Voltage
Current Gain Bandwidth Product
7
Pulse Test : PW
300uS, Duty Cycle2%
V
V
V
I
C
I
C
I
B
P
P
T
T
: KSH47
: KSH47
: KSH47
CBO
CEO
EBO
C
C
J
STG
(Tc =25&)
V
I
CEO
I
CES
I
EBO
h
FE
VCE(sat)
V
f
T
350
500
250
400
5
1
2
0.6
15
1.56
150
-65 ~ 150
(sus)
CEO
(on)
BE
V
V
V
V
V
A
A
A
W
W
&
&
IC = 30mA, IB = 0
= 150V, IB = 0
V
CE
V
= 300V, IB = 0
CE
V
= 350, V
CE
V
CE
V
BE
V
CE
V
CE
I
= 1A, IB = 0.2A
C
V
CE
V
CE
EB
= 500, V
EB
= 5V, IC = 0
= 10V, IC = 0.3A
= 10V, IC = 1A
= 10A, IC = 1A
=10V, IC = 0.2A
f = 2MHz
D-PAK
1
1. Base 2. Collector 3. Emitter
I-PAK
1
1. Base 2. Collector 3. Emitter
250
400
= 0
= 0
30
10
10
0.2
0.2
0.1
0.1
1
150
1
1.5
V
V
mA
mA
mA
mA
mA
V
V
MHz
Page 2
KSH47/50 NPN EPITAXIAL SILICON TRANSISTOR
Loading...