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KSH44H11 NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE POWER AND SWITCHING
SUCH AS OUTPUT OR DRIVER STAGES IN
APPLICATIONS D- PACK FOR SURFACE
MOUNT APPLICATIONS
• Load Formed for Surface Mount Application(No Suffix)
• Straight Lead (I.PACK, “- I Suffix)
• Electrically Similar to Popular KSE44H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation ( T
Collector Dissipation (T
=25&)
C
=25&)
A
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Typ Max Unit
* Collector Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Capacitance
Turn On Time
Storage Time
Fall Time
7
Pulse Test : PW
300s, Duty Cycle2%
V
CEO
V
EBO
I
C
I
C
P
C
P
C
T
J
T
STG
V
CEO
I
CEO
I
EBO
h
FE
VCE(sat)
V
BE
f
T
C
OB
t
ON
t
STG
t
F
-65 ~ 150
(Tc =25&)
(sus)
(on)
80
5
8
16
20
1.75
150
IC = 30mA, IB = 0
V
= 80V, IB = 0
CE
V
= 5V, IC = 0
BE
V
= 1V, IC = 2A
CE
V
= 1V, IC = 4A
CE
I
= 8A, IB = 0.4A
C
I
= 8A, IB = 0.8A
C
V
= 10A, IC = 0.5A
CE
f = 20MHz
V
=10V, f = 1MHz
CB
I
= 5A, IB1 = 0.5A
C
I
1 = IB2 = 0.5A
B
D-PAK
1
1. Base 2. Collector 3. Emitter
I-PAK
V
V
A
A
1
W
W
1. Base 2. Collector 3. Emitter
&
&
80
10
50
V
uA
uA
60
40
1.5
V
V
MHz
pF
ns
ns
ns
1
50
130
300
500
140
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KSH44H11 NPN EPITAXIAL SILICON TRANSISTOR
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