Samsung ksh41 Datasheet

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KSH41C PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLI CATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS
• Load Formed for Surface Mount Application(No Suffix)
• Straight Lead (I.PACK, “- I Suffix)
• Electrically Similar to Popular TIP41 and TIP41C
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( T Collector Dissipation (T
=25&)
C
=25&)
A
Junction Temperature Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Max Unit
* Collector Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current * DC Current Gain
* Collector Emitter Saturation Voltage * Base Emitter On Voltage Current Gain Bandwidth Product
7
Pulse Test : PW300uS, Duty Cycle2%
V V V I I I
T T
CBO CEO
EBO C C B
P
C
P
C
J
STG
(Tc =25&)
V
CEO
I
CEO
I
CES
I
EBO
h
FE
VCE(sat) V
BE
f
T
100 100 5 6 10 2 20
1.75 150
-65 ~ 150
(sus)
(on)
V V V A A
A W W
IC = 30mA, IB = 0 V
= 60V, IB = 0
CE
V
= 100V, V
CE
V
= 5V, IC = 0
BE
V
= 4V, IC = 0.3A
CE
V
= 4V, IC = 3A
CE
I
= 6A, IB = 600mA
C
V
= 6A, IC = 4A
CE
V
= 10V, IC = 500mA
CE
f = 1MHz
D-PAK
1
1. Base 2. Collector 3. Emitter
I-PAK
1
1. Base 2. Collector 3. Emitter
100
= 0
BE
30 15
3
50 10
0.5
75
1.5
2
V uA uA
mA
V
V
MHz
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KSH41C PNP EPITAXIAL SILICON TRANSISTOR
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KSH41C PNP EPITAXIAL SILICON TRANSISTOR
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