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KSH350 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAG E POWER TRANSISTORS
DPAK FOR SURFACE MOUNT APPLICATIONS
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (“ -I “ Suffix)
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
Collector Dissipation (T
= 25&)
A
= 25&)
C
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Max Unit
* Collector Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
* DC Current Gain
7
Pulse Test : PW
300uA, Duty Cycle2%
V
CBO
V
CEO
V
EBO
I
C
I
C
P
C
P
C
T
J
T
STG
(Tc =25&)
V
CEO
I
CEO
I
EBO
h
FE
- 300
- 300
- 3
15
-65 ~ 150
(sus)
- 0.5
- 0.75
1.56
150
IC = - 1mA, IB = 0
V
V
V
V
V
V
A
A
W
W
&
&
= - 300V, IE =0
CB
= - 3V, IC = 0
EB
= - 10V, IC = - 50mA
CE
D-PAK
1
1. Base 2. Collector 3. Emitter
I-PAK
1
1. Base 2. Collector 3. Emitter
- 300
- 0.1
- 0.1
30
240
V
mA
mA
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KSH350 PNP EPITAXIAL SILICON TRANSISTOR
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