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KSH32/32C PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE AMPLIFIER
LOW SPEED SWITCHING APPLI CATIONS
D-PACK FOR SURFACE MOUNT
APPLICATIONS
• Load Formed for Surface Mount Application(No Suffix)
• Straight Lead (I.PACK, “- I Suffix)
• Electrically Similar to Popular TIP32 and TIP32C
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage
: KSH32
: KSH32C
Collector Emitter Voltage : KSH32
: KSH32C
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( T
Collector Dissipation (T
=25&)
C
=25&)
A
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Max Unit
* Collector Emitter Sustaining Voltage : KSH32
: KSH32C
Collector Cutoff Current
: KSH32C
Collector Cutoff Current
: KSH32C
Emitter Cutoff Current
* DC Current Gain
* Collector Emitter Saturation Voltage
* Base Emitter On Voltage
Current Gain Bandwidth Product
7
Pulse Test : PW
300s, Duty Cycle2%
V
V
V
I
I
I
P
P
T
T
: KSH32
: KSH32
CBO
CEO
EBO
C
C
B
C
C
J
STG
(Tc =25&)
V
CEO
I
CEO
I
CES
I
EBO
h
FE
VCE(sat)
V
BE
f
T
- 40
- 100
- 40
- 100
- 5
- 3
- 5
- 1
15
1.56
150
-65 ~ 150
(sus)
(on)
V
V
V
V
V
A
A
A
W
W
&
&
IC = - 30mA, IB = 0
= - 40V, IB = 0
V
CE
V
= - 60V, IB = 0
CE
V
= - 40V, V
CE
V
= - 100V, V
CE
V
= - 5V, IC = 0
BE
V
= - 4V, IC = - 1A
CE
V
= - 4V, IC = - 3A
CE
I
= - 3, IB = - 375mA
C
V
= - 4A, IC = - 3A
CE
V
= -10V, IC = - 500mA
CE
BE
f = 1MHz
D-PAK
1
1. Base 2. Collector 3. Emitter
I-PAK
1
1. Base 2. Collector 3. Emitter
-40
-100
= 0
= 0
BE
25
10
3
-50
-50
-20
-20
50
-1.2
-1.8
V
V
uA
uA
uA
uA
mA
-1
V
V
MHz
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KSH32/32C PNP EPITAXIAL SILICON TRANSISTOR
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KSH32/32C PNP EPITAXIAL SILICON TRANSISTOR
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