Page 1
KSH31/31C NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE AMPLIFIER
LOW SPEED SWITCHING APPLI CATIONS
D-PACK FOR SURFACE MOUNT
APPLICATIONS
Load Formed for Surface Mount Application(No Suffix)
Straight Lead (I.ACK, “- I Suffix)
Electrically Similar to Popular TIP31 and TIP31C
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage
: KSH31
: KSH31C
Collector Emitter Voltage
: KSH31
: KSH31C
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( T
Collector Dissipation (T
=25&)
C
=25&)
A
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage
Collector Cutoff Current : KSH31
Collector Cutoff Current : KSH31
Emitter Cutoff Current
* DC Current Gain
* Collector Emitter Saturation Voltage
* Base Emitter On Voltage
Current Gain Bandwidth Product
7
Pulse Test : PW300uS, Duty Cycle2%
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
P
C
T
J
T
STG
: KSH31
: KSH31C
: KSH31C
: KSH31C
-65 ~ 150
(Tc =25&)
V
CEO
I
CEO
I
CES
I
EBO
h
FE
VCE(sat)
V
BE
f
T
40
100
40
100
5
3
1
1
15
1.56
150
(sus)
(on)
V
V
V
V
V
A
A
A
W
W
&
&
IC = 30mA, IB = 0
= 40V, IB = 0
V
CE
V
= 60V, IB = 0
CE
V
= 40V, V
CE
V
CE
V
BE
V
CE
V
CE
I
= 3A, IB = 375mA
C
V
CE
V
CE
BE
= 100V, V
= 5V, IC = 0
= 4V, IC = 1A
= 4V, IC = 3A
= 4A, IC = 3A
= 10V, IC = 500mA
f = 1MHz
D-PAK
1
1. Base 2. Collector 3. Emitter
I-PAK
1
1. Base 2. Collector 3. Emitter
= 0
= 0
BE
40
100
25
10
3
50
50
20
20
50
1.2
1.8
V
V
uA
uA
uA
uA
mA
1
V
V
MHz
Page 2
KSH31/31C NPN EPITAXIAL SILICON TRANSISTOR
Page 3
KSH31/31C NPN EPITAXIAL SILICON TRANSISTOR
Loading...