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KSH3055 NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE AMPLIFIER
LOW SPEED SWITCHING APPLI CATONS
D-PACK FOR SURFACE MOUNT
APPLICATIONS
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I. PACK, “ -I “ Suffix)
• Electrically Similar to Popular KSE3055
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product :
f
= 2MHz (MIN), IC = 500mA
T
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Dissipation ( T
Collector Dissipation (T
=25&)
C
=25&)
A
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Max Unit
* Collector Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
* DC Current Gain
* Collector Emitter Saturation Voltage
* Base Emitter On Voltage
Current Gain Bandwidth Product
7
Pulse Test : PW
300s, Duty Cycle2%
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
(Tc =25&)
V
CEO
I
CEO
I
CBO
I
EBO
h
FE
VCE(sat)
V
BE
f
T
(sus)
(on)
70
60
5
10
6
20
1.75
150
-55 ~ 150
IC = 30mA, IB = 0
V
V
V
V
V
I
C
I
C
V
V
f = 500KHz
V
V
V
A
A
W
W
&
&
= 30V, IE = 0
CE
= 70V, IE = 0
CB
= 5V, IC = 0
EB
= 4V, IC = 4A
CE
= 4V, IC = 10A
CE
= 4A, IB = 0.4A
= 10A, IB = 3.3A
= 4V, IC = 4A
CE
= 10V, IC = 500mA
CE
D-PAK
1
1. Base 2. Collector 3. Emitter
I-PAK
1
1. Base 2. Collector 3. Emitter
60
50
2
0.5
100
20
5
1.1
8
1.8
2
V
uA
mA
mA
V
V
V
MHz
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KSH3055 NPN EPITAXIAL SILICON TRANSISTOR
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