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KSH2955 PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE AMPLIFIER
LOW SPEED SWITCHING APPLI CATONS
D-PACK FOR SURFACE MOUNT
APPLICATIONS
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I. PACK, “ -I “ Suffix)
• Electrically Similar to Popular KSE2955
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product :
f
= 2MHz (MIN), IC = -500mA
T
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Dissipation ( T
Collector Dissipation (T
=25&)
C
=25&)
A
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Max Unit
* Collector Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
* DC Current Gain
* Collector Emitter Saturation Voltage
* Base Emitter On Voltage
Current Gain Bandwidth Product
7
Pulse Test : PW
300uS, Duty Cycle2%
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
(Tc =25&)
V
CEO
I
CEO
I
CBO
I
EBO
h
FE
VCE(sat)
V
BE
f
T
(sus)
(on)
- 70
- 60
- 5
- 10
- 6
20
1.75
150
-55 ~ 150
IC = - 30mA, IB = 0
V
CE
V
CB
V
EB
V
CE
V
CE
I
= - 4A, IB = 0.4A
C
I
= - 10A, IB = - 3.3A
C
V
CE
V
CE
f = 500KHz
V
V
V
A
A
W
W
&
&
= - 30V, IE = 0
= - 70V, IE = 0
= - 5V, IC = 0
= - 4V, IC = - 4A
= - 4V, IC = -10A
= - 4V, IC = - 4A
= - 10V, IC = - 500mA,
D-PAK
1
1. Base 2. Collector 3. Emitter
I-PAK
1
1. Base 2. Collector 3. Emitter
-60
- 50
- 2
- 0.5
100
20
5
- 1.1
- 8
-1.8
2
V
uA
mA
mA
V
V
V
MHz
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KSH2955 PNP EPITAXIAL SILICON TRANSISTOR
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