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KSH210 PNP EPITAXIAL SILICON TRANSISTOR
D-PACK FOR SURFACE MOUNT APPLICATIO NS
• High DC Current Gain
• Low Collector Emitter Saturation Voltage
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I. PACK, “ - I “ Suffix)
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Base Current
Collector Current (DC)
Collector Peck Current (Pulse)
Collector Dissipation (T
Collector Dissipation (T
= 25&)
A
= 25&)
C
Junction Temperature
Storage Temperature
V
V
V
I
I
I
P
P
T
T
CBO
CEO
EBO
C
C
B
C
C
J
STG
- 40
- 25
- 8
- 1
- 5
- 10
1.4
12.5
150
-65 ~ 150
V
V
V
A
A
A
W
W
&
&
D-PAK
1
1. Base 2. Collector 3. Emitter
I-PAK
1
1. Base 2. Collector 3. Emitter
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Max Unit
*Collector Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
* DC Current Gain
* Collector Emitter Saturation Voltage
* Base Emitter Saturation Voltage
* Base Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
7
Pulse Test : PW
300uS, Duty Cycle2%
(Tc =25&)
V
(sus)
CEO
I
CBO
I
EBO
h
FE
VCE(sat)
V
(sat)
BE
V
(on)
BE
f
T
C
OB
IC = - 10mA, IB = 0
V
= - 40V, IE = 0
CB
V
= - 8V, IC = 0
EBO
V
= - 1V, IC = - 500mA
CE
V
= - 1V, IC = - 2A
CE
V
= - 2V, IC = - 5A
CE
I
= - 500mA, IB= - 50mA
C
I
= - 2A, IB = - 200mA
C
I
= - 5A, IB = - 1A
C
I
= - 5A, IB = - 1A
C
V
= - 1V, IC = - 2A
CE
V
= - 10V, IC = - 100mA, f = 10MHz
CE
V
= - 10V, IE = 0, f = 0.1MHz
CB
-25
70
45
10
65
-100
-100
180
-0.3
-0.75
-1.8
-2.5
-1.6
120
V
nA
nA
V
V
V
V
V
MHz
pF
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KSH210 PNP EPITAXIAL SILICON TRANSISTOR
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KSH210 PNP EPITAXIAL SILICON TRANSISTOR
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