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KSH13003 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAG E POWER TRANSISTOR
D-PACK FOR SURFACE MOUNT APPLICATIONS
• High speed Switching
• Suitable for Switching Regulator Motor Control
• Straight Lead(I.PACK, I Suffix)
• Lead Formed for Surface Mount Applications(No Suffix)
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( T
Junction Temperature
Storage Temperature
=25&)
C
V
V
V
I
I
I
P
T
T
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Typ Max Unit
* Collector Emitter Breakdown Voltage
Emitter Cutoff Current
* DC Current Gain
* Collector Emitter Saturation Voltage
* Base Emitter Saturation Voltage
Output Capacitance
Current - Gain Bandwidth Product
Turn on time
Storage time
Fall Time
7
Pulse Test : Pulse Width=5ms, Duty Cycle
CBO
CEO
EBO
C
C
B
C
J
STG
(Tc =25&)
V
I
EBO
h
VCE(sat)
V
C
f
T
t
ON
t
STG
t
F
CEO
FE
BE
OB
10%
(sus)
(sat)
700
400
9
1.5
3
0.75
40
150
-65 ~ 150
IC = 5mA, IB = 0
V
EB
V
CE
V
CE
I
= 0.5A, IB = 0.1A
C
I
= 1A, IB = 0.25A
C
I
= 1.5A, IB = 0.5A
C
I
= 0.5A, IB = 0.1A
C
I
= 1A, IB = 0.25A
C
V
CB
V
CE
V
CC
I
= 1A
C
I
1 = 0.2A, IB2 = - 0.2A
B
V
V
V
A
A
A
W
&
&
= 9V, IC = 0
= 5V, IC = 0.5A
= 1V, IC = 2A
= 10V, f = 0.1MHz
= 10V, IC = 0.1A
= 125V
D-PAK
1
1. Base 2. Collector 3. Emitter
I-PAK
1
1. Base 2. Collector 3. Emitter
400
10
8
40
5
0.5
1
3
1
1.2
21
4
1.1
4.0
0.7
V
uA
V
V
V
V
V
pF
MHz
uS
uS
uS
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KSH13003 NPN EPITAXIAL SILICON TRANSISTOR
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