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KSH112 NPN SILICON DARLINGTON TRANSISTOR
D-PACK FOR SURFACE MOUNT
APPLICATIONS
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I. PACK, “ - I “ Suffix)
• Electrically Similar to Popular TIP112
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( T
Collector Dissipation (T
=25&)
C
=25&)
A
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Max Unit
* Collector Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
* DC Current Gain
* Collector Emitter Saturation Voltage
* Base Emitter Saturation Voltage
* Base Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
7
Pulse Test : PW
300uS, Duty Cycle2%
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
P
C
T
J
T
STG
(Tc =25&)
V
CEO
I
CEO
I
CBO
I
EBO
h
FE
VCE(sat)
V
BE
V
BE
f
T
C
OB
(sus)
(sat)
(on)
100
100
5
2
4
50
20
1.75
150
-65 ~ 150
IC = 30mA, IB = 0
V
CE
V
CB
V
EB
V
CE
V
CE
V
CE
I
= 2A, IB = 8mA
C
I
= 4A, IB = 40mA
C
I
= 4A, IB = 40mA
C
V
CE
V
CE
f = 1MHz
V
CB
f = 0.1MHz
V
V
V
A
A
mA
W
W
&
&
= 50V, IB = 0
= 100V, IB = 0
= 5V, IC = 0
= 3V, IC = 0.5A
= 3V, IC = 2A
= 3V, IC = 4A
= 3A, IC = 2A
= 10V, IC = 0.75A
= 10V, IE = 0
D-PAK
1
1. Base 2. Collector 3. Emitter
I-PAK
1
1. Base 2. Collector 3. Emitter
100
20
20
2
500
1000
12K
200
2
3
4
2.8
25
100
V
uA
uA
mA
V
V
V
V
MHz
pF
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KSH112 NPN SILICON DARLINGTON TRANSISTOR
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KSH112 NPN SILICON DARLINGTON TRANSISTOR
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