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KSE210 PNP EPITAXIAL SILICON TRANSISTOR
COLLECTOR-EMITTER SUSTAINING VOLTAGE
LOW COLLECTOR-EMITTER SATURATION
SATURATION VOLTAG E
HIGH CURRENT GAI N-BANDWIDTH
PRODUCT-MIN fT=65 {I
Complement to KSE200
= -100
C
~
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector- Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
=25&)
C
V
V
T
CBO
CEO
V
EBO
I
C
P
C
T
J
STG
-40
-25
-8
-5
15
150
-65 ~ 150
V
V
V
A
W
&
&
TO-126
1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Condition Min Max Unit
Collector Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain- Bandwidth Product
Output Capacitance
V
I
I
h
VCE(sat)
V
V
f
C
(TC=25&)
CEO
CBO
EBO
FE
(sat)
BE
(on)
BE
T
OB
(sus)
IC = - 10mA, IB = 0
V
V
V
V
V
V
I
I
I
I
V
V
f = 10MHz
V
= -40V, IE = 0
CB
= - 40V, IE =0, TJ = 125
CB
= - 8V, IC = 0
BE
= - 1V, IC = - 500mA
CE
= - 1V, IC = - 2A
CE
= - 2V, IC = - 5A
CE
= - 500mA, IB = - 50mA
C
= - 2A, IC = - 200mA
C
= - 5A, IB = - 1A
C
= - 5A, IB = - 1A
C
= - 1V, IC = - 2A
CE
= - 10V, IC = - 100mA,
CE
= - 10V, IE = 0, f = 0.1MHz
CB
-25
-100
&
-100
-100
V
nA
uA
nA
70
45
180
10
-0.3
-0.75
-1.8
-2.5
-1.6
65
120
V
V
V
V
V
MHz
pF
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KSE210 PNP EPITAXIAL SILICON TRANSISTOR
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