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KSE170/171/172 PNP EPITAXIAL SILICON TRANSISTOR
LOW POWER AUDIO AMPLIFIER
LOW CURRENT, HIGH SPEED
SWITCHING APPLI CATIONS
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage : KSE170
V
CBO
: KSE171
: KSE172
Collector-Emitter Voltage
: KSE170
V
CEO
: KSE171
: KSE172
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissiapation (T
Collector Dissipation ( T
Junction Temperature
Storage Temperature
=25&)
A
=25&)
C
V
I
P
T
T
EBO
C
I
C
I
B
C
P
C
J
STG
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage
: KSE170
: KSE171
: KSE172
Collector Cutoff Current
: KSE170
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
V
CEO
I
CBO
I
EBO
h
FE
VCE(sat)
V
BE
V
BE
f
T
C
OB
-65 ~ 150
(Tc=25&)
(sus)
(sat)
(on)
-60
-80
-100
-40
-60
-80
-7
-3
-6
-1
1.5
12.5
150
V
V
V
V
V
V
V
A
A
A
W
W
&
&
I
= 10mA, IB = 0
C
V
= - 60V, IB = 0
CB
V
= - 80V, IE = 0
CB
V
= - 100V, IE = 0
CB
V
= - 60V, IE = 0, TC = 150
CB
= - 80V, IE = 0, TC = 150
V
CB
= - 100V, IE = 0, TC = 150
V
CB
= - 7V, IC = 0
V
BE
V
= - 1V, IC = - 100mA
CE
V
= - 1V, IC = - 500mA
CE
V
= - 1V, IC = - 1.5A
CE
I
= - 500mA, IB = - 50mA
C
I
= - 1.5A, IB = - 150mA
C
I
= - 3A, IB = - 600mA
C
I
= - 1.5A, IB = - 150mA
C
I
= - 3A, IB = - 600mA
C
V
= - 1V, IC = - 500mA
CE
V
= - 10V, IC = - 100mA, f = 10MHz
CE
V
= - 10V, IE = 0, f = 0.1MHz
CB
TO-126
1. Emitter 2. Collector 3. Base
-40
-60
-80
&
&
&
50
30
12
50
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
250
-0.3
-0.9
-1.7
-1.5
-2.0
-1.2
50
V
V
V
uA
uA
uA
mA
mA
mA
uA
V
V
V
V
V
V
MHz
pF
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KSE170/171/172 PNP EPITAXIAL SILICON TRANSISTOR
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KSE170/171/172 PNP EPITAXIAL SILICON TRANSISTOR
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