Samsung kse13007f Datasheet

Page 1
KSE13007F NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCH MO DE APPLICATIONS
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (T
=25&)
C
Junction Temperature Storage Temperature
ELECTRICAL CHARACTERISTICS
7
Collector- Base Breakdown Voltage Emitter- Base Breakdown Voltage
7
DC Current Gain
7
Collector Emitter Saturation Voltage
7
Base Emitter Saturation Voltage
Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time
7
Pulse Test : PW300s, Duty Cycle2%
Characteristic Symbol Test Condition Min Typ Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
T
J
T
STG
V
CEO
I
EBO
h
FE
VCE(sat)
V
BE
C
OB
f
T
t
ON
t
STG
t
F
(Tc=25&)
(sus)
(sat)
700 400 9 8 16 4 40 150
-65 ~ 150
IC = 10mA, IB = 0 V
= 9V, IC = 0
EB
V
= 5V, IC = 2A
CE
V
= 5V, IC = 5A
CE
I
= 2A, IB = 0.4A
C
= 5A, IB = 1A
I
C
I
= 8A, IB = 2A
C
I
= 2A, IB = 0.4A
C
I
= 5A, IB = 1A
C
V
= 10V , f = 0.1MHz
CB
V
= 10V, IC = 0.5A
CE
V
=125V, IC = 5A
CC
I
= IB2 = 1A
B1
TO-220F
V V V A A A
W
1. Base 2. Collector 3. Emitter
400
1 8 5
60
30
1
2
3
1.2
1.6
110
4
1.6
3
0.7
V
mA
V V V V V
pF
MHz
uS uS uS
Page 2
KSE13007F NPN SILICON TRANSISTOR
Page 3
KSE13007F NPN SILICON TRANSISTOR
Loading...