
KSE13007F NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCH MO DE APPLICATIONS
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
=25&)
C
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
7
Collector- Base Breakdown Voltage
Emitter- Base Breakdown Voltage
7
DC Current Gain
7
Collector Emitter Saturation Voltage
7
Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
7
Pulse Test : PW300s, Duty Cycle2%
Characteristic Symbol Test Condition Min Typ Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
T
J
T
STG
V
CEO
I
EBO
h
FE
VCE(sat)
V
BE
C
OB
f
T
t
ON
t
STG
t
F
(Tc=25&)
(sus)
(sat)
700
400
9
8
16
4
40
150
-65 ~ 150
IC = 10mA, IB = 0
V
= 9V, IC = 0
EB
V
= 5V, IC = 2A
CE
V
= 5V, IC = 5A
CE
I
= 2A, IB = 0.4A
C
= 5A, IB = 1A
I
C
I
= 8A, IB = 2A
C
I
= 2A, IB = 0.4A
C
I
= 5A, IB = 1A
C
V
= 10V , f = 0.1MHz
CB
V
= 10V, IC = 0.5A
CE
V
=125V, IC = 5A
CC
I
= IB2 = 1A
B1
TO-220F
V
V
V
A
A
A
W
&
&
1. Base 2. Collector 3. Emitter
400
1
8
5
60
30
1
2
3
1.2
1.6
110
4
1.6
3
0.7
V
mA
V
V
V
V
V
pF
MHz
uS
uS
uS

KSE13007F NPN SILICON TRANSISTOR

KSE13007F NPN SILICON TRANSISTOR