Page 1
NPN TRIPLE DIFFUSED
KSC5321 PLANAR SILICON TRANSISTOR
HIGH VOLTAG E AND HIGH RELIABILI TY
• High speed Switching
TO-220
• Wide Safe Operating Area
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Base Voltage V
Collector Emitter Voltage V
Emitter Base Voltage V
Collector Current DC I
7
Pulse
Base Current DC I
7
Pulse
Collector Dissipation (TC=25
&
)
Junction Temperature T
Storage Temperature T
7
Pulse Test : Pulse Width = 5ms, Duty Cycle10%
ELECTRICAL CHARACTERISTICS
CBO
CEO
EBO
I
CP
I
BP
P
STG
(T
C
B
C
J
C
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Base Breakdown Voltage BV
Collector Emitter Breakdown Voltage BV
Emitter Base Breakdown Voltage BV
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
h
CBO
EBO
FE
FE
CBO IC
CEO IC
EBO IC
Collector Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 0.6A - - 1.0 V
Base Emitter Saturation Voltage VBE(sat) IC = 3A, IB = 0.6A - - 1.5 V
Current Gain bandwidth Product f
Output Capacitance C
Input Capacitance C
Turn on Time t
Storage Time t
Falling Time t
Turn on Time t
Storage Time t
Falling Time t
T
OB
IB
ON
STG
F
ON
STG
F
800 V
500 V
7V
5A
10
2A
4
1.Base 2.Collector 3.Emitter
100 W
=25
150
-55 ~ 150
&
)
&
&
= 1mA, IE = 0 800 - - V
= 5mA, IB = 0 500 - - V
=1mA, IC = 0 7 - - V
V
= 800V, IE = 0 - - 10 uA
CB
V
= 7V, IC = 0 - - 10 uA
EB
V
= 5V, IC = 0.6A 15 - 40 -
CE
V
= 5V, IC = 3A 8 - -
CE
V
= 10V, IE =0.6A, f =1MHz - 14 - MHz
CE
V
= 10V, IE = 0, f = 1MHz - 65 100 pF
CB
V
= 7V, IC = 0, f = 1MHz - 1400 2000 pF
EB
V
= 125V, - - 0.5
CC
IC = 1A - 6.5 uS
IB1 = -IB2 = 0.2A - - 0.3
V
= 250V, - - 0.5
CC
IC = 4A - - 3.0 uS
IB1 = 0.8A, IB2 = 1.6A - - 0.3
Page 2
NPN TRIPLE DIFFUSED
KSC5321 PLANAR SILICON TRANSISTOR
THERMAL CHARACTERISTI CS
Characteristic Symbol Max Unit
Thermal Resistance Junction to Case
Junction to Ambient
RÞ j-C
RÞ j-a
1.25
62.5
&
/w
Page 3
NPN TRIPLE DIFFUSED
KSC5321 PLANAR SILICON TRANSISTOR
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