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KSC5027 NPN SILICON TRANSISTOR
HIGH VOLTAG E AND HIGH RELIABILITY
HIGH SPEED SWITCHING
WIDE SOA
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( T
=25Î)
C
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
C
I
B
C
J
STG
BV
BV
BV
V
I
CBO
I
EBO
hFE1
h
FE
V
CE
V
BE
C
OB
f
T
t
ON
t
S
t
F
(TC =25Î)
CBO
CEO
EBO
(sus)
CEX
2
(sat)
(sat)
-55 ~ 150
1100
800
7
3
10
1.5
50
150
V
V
V
A
A
A
W
Î
Î
IC = 1mA, IE = 0
I
= 5mA, R
C
= 1mA, IC = 0
I
E
I
= 1.5A, IB1 = -IB2 = 0.3A
C
=
BE
L = 2mH, Clamped
V
= 800V, IE = 0
CB
V
= 5V, IC = 0
EB
V
= 5V, IC = 0.2A
CE
V
= 5V, IC = 1A
CE
I
= 1.5A, IB = 0.3A
C
I
= 1.5A, IB = 0.3A
C
V
= 10V, IE = 0, f = 1MHz
CB
V
= 10V, IC = 0.2A
CE
V
= 400V
CC
5I
1 = -2.5IB2 = IC = 2A
B
RL = 200
`
TO-220
1.Base 2.Collector 3.Emitter
1100
800
7
800
10
10
10
8
40
2
1.5
60
15
0.5
3
0.3
V
V
V
V
uA
uA
V
V
pF
MHz
uS
uS
uS
hFE(1) CLASSIFI CATION
Classification N R O
hFE1 10 - 20 15 - 30 20 - 40
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KSC5027 NPN SILICON TRANSISTOR
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KSC5027 NPN SILICON TRANSISTOR
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